impurity Diffusion in ultra high purity iron using non-reactive Aluminum and Silicon

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Impurity diffusion of A1 and Si in high purity and ultra high purity iron has been studied by using non-radioactive tracer of A1 and Si elements. Concentration profiles have been determined by using several kind of the instrumental analyses, namely, secondary ion mass spectrometer, Auge electron spectroscopy, atomic absorption analysis, absorptiometry and grou discharge emission spectroscopy. Reliable penetration profile has been obtained by the absorptiometry for the impurity diffusion of A1 in Fe, and determined the Arrhenius equation as follows ;D-1.4x10-6exp (-236kJmol^<-1>/RT) m^2S^<-1>D-1.4x10-6exp (-236kJmol^<-1>/RT) m^2S^<-1>As deposited A1 sample, the other instrumental analysis, except carbon furnace atomic adsorption analysis and Grou discharge emission spectroscopy, have shown the penetration of A1 in Fe. It has been found that oxen is recognized at interface between A llayer and Fe by the secondary ion mass spectrometer and Auge electron spectroscopy. It has been suggested that the grou discharge emission spectroscopy is useful to measure the penetration profile for the impurity diffusion.