Plasma processing for carbon-based field-emission materials and their charactersit

碳基场致发射材料的等离子体加工及其特性

• 批准号: 11450271
• 负责人: SUGIMURA Hiroyuki
• 金额: $ 8.13万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450271/
• 关键词: diamond; diamond-like carbor; carbon nitride; field emission; 窒素炭素; 窒化欄素; 微細加工; プラズマ合成; 電流計測; 走査型プローブ顕微鏡

Field emission characteristics of amorphous carbon nitride (a-C : N) thin films were studied in the applied field strength range of up to 20 V/μm with comparing the characteristics of amorphous carbon (a-C) thin films. Both a-C : N and a-C films were deposited on Si substrates by means of shielded arc ion plating (SAIP) using nitrogen or argon as an operating gas, respectively, and graphite as a solid carbon source. The a-C : N films showed better field emission characteristics, that is, lower threshold field strengths and higher maximum emission current densities, than the a C films. Nitrogen doping to a-C was found to be effective in order to improve the field emission characteristics. Among all of the fabricated a-C : N films, the film containing 23% nitrogen, prepared using a nitrogen arc plasma at a pressure of 1 Pa with applying a sample bias voltage of 100 V, showed the lowest thresholdrfield and the highest emission current density. Furthermore, thickness of this a-C : N was optimized to be ca. 40 nm in order to the best field emission characteristics , that is, a threshold field of 12 V/μm and a emission current density of 3.6 μA/cm^2 at a field of 20 V/μm.

在高达20 V/μm的外加场强范围内，研究了非晶态氮化碳（a-C: N）薄膜的场发射特性，并对非晶态碳（a-C）薄膜的场发射特性进行了比较。以氮气或氩气为操作气体，石墨为固体碳源，采用屏蔽电弧离子镀（SAIP）的方法在Si衬底上沉积a- c: N和a- c薄膜。a-C: N薄膜表现出较好的场发射特性，即较低的阈值场强和较高的最大发射电流密度。在a-C中掺杂氮可以有效地改善其场发射特性。在所有制备的a- c: N薄膜中，在1 Pa压力下，施加100 V样品偏置电压的氮气电弧等离子体制备的含氮量23%的a- c: N薄膜显示出最低的阈值场和最高的发射电流密度。为了获得最佳的场发射特性，将a- c: N的厚度优化为约40 nm，即在20 V/μm的场下，阈值场为12 V/μm，发射电流密度为3.6 μA/cm^2。

项目成果

H.Sugimura et al.: "Field emission properties of amorphous carbon nitride thin films prepared by arc ion Plating"Surface and Coatings Technology. 142-144. 714-718 (2001)

H.Sugimura 等人：“通过电弧离子镀制备的非晶氮化碳薄膜的场发射特性”表面和涂层技术。

H. Sugimura et al.: "Electron field emission from nitorgen-doped amorphous carbon thin films prepared by arc ion plating"Proceedings of Second International Conference on Processing Materials for Properties. 315-318 (2000)

H. Sugimura 等人：“通过电弧离子镀制备的氮掺杂非晶碳薄膜的电子场发射”第二届国际加工材料性能会议论文集。

H.Sugimura 他: "Fabrication of micro diamond array and electrical characterization of individual diamond microcrystals by scanning probe microscopy"J. Vac. Sci. Technol. B. 17(5). 1919-1922 (1999)

H. Sugimura 等人：“通过扫描探针显微镜进行微金刚石阵列的制造和电学表征”J. Vac. B. 1919-1922 (1999)。

H. Sugimura et al.: "Field emission properties of amorphous carbon nitride thin films prepared by arc ion plating"Surface and Coatings Technolog. 142-144. 714-718 (2001)

H. Sugimura 等人：“通过电弧离子镀制备的非晶氮化碳薄膜的场发射特性”表面和涂层技术。

Y. Sakamoto et al.: "Site-selective plasma CVD based on catalytic nucleation enhancemer Fabrication of micro diamond arrays"Diamond and Related Material. 8. 1423-1426 (1999)

Y. Sakamoto 等人：“基于催化成核增强剂的位点选择性等离子体 CVD 制造微型金刚石阵列”金刚石和相关材料。