Photo and nanoprpbe integrated lithography
Photo and nanoprpbe integrated lithography
批准号:
12555197
负责人:
SUGIMURA Hiroyuki
金额:
$7.81万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2002
中文摘要
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英文摘要
This project has been conducted in order to integrate photolithography and nanoprobe lithography on the basis of organosilane monolayer resist films and to develop a high throughput lithgraphy process. We have obtained the followting results.1) Development of an optical lithgraphy systemUsing an excimer lamp at 172 nm, an photolithograpy system was designed and constructed. We have suceeded in projecting a lines and spaces pattern at a resolution of 1 μm.2) Detection of photoprinted pattens without developing resistsWe have developed a technique in order to observe optically printed patterns on an organisilane monolayer with high resolution and without destroying the pattern. Through surface potential measurements based on non-contact atomic force microscopy, we could find the photoprinted patterns at a spacial resolucion better than 100 nm.3) Nanoprobe drawingUsing atomic force microscopy, we have suceeded in drawing fine patterns on the monolayer resist as narrow as 20 nm.
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N.Saito et al.: "Principle of Image Contrast in Scanning Electron Microscopy for Binary Microstructures Composed of Organosilane Self-Assembled Monolayers"J. Phys. Chem. B. 107. 664-667 (2003)
N.Saito 等:“有机硅烷自组装单分子层组成的二元微结构的扫描电子显微镜图像对比度原理”J。
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N.Saito et al.: "Decomposition Mechanism of p-Chloromethylphenyltrimethoxysilane Self-Assembled Monolayers on Vacuum Ultra Vilolet Irradiation"J. Mater. Chem.. 12. 2684-2687 (2002)
N.Saito 等:“对氯甲基苯基三甲氧基硅烷自组装单层膜在真空紫外辐射下的分解机理”J。
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K.Hayashi et al.: "Regulation of the Surface Potential of Silicon Substrates in Micrometer Scale with Organosilane Self-Assembled Monolayers"Langmuir. 18. 7469-7472 (2002)
K.Hayashi 等人:“用有机硅烷自组装单分子层调节微米级硅基底的表面电势”Langmuir。
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L.Hong et al.: "Photoreactivity of alkylsilane self-assembled monolayer on silicon surface : its application to prepareing micropatterned ternary monolayres"Langmuir. 19. 1966-1696 (2003)
L.Hong 等人:“硅表面烷基硅烷自组装单层的光反应性:其在制备微图案三元单层中的应用”Langmuir。
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通讯作者:
K.Hayashi et al.: "Regulation of the Surface Potential of Silicon Substrates in Micrometer Scale with Organosilane Self-Assmbled Monolayers"Langmuir. 18. 7469-7472 (2002)
K.Hayashi 等人:“用有机硅烷自组装单分子层调节微米级硅基底的表面电势”Langmuir。
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共 24 条
Memory devices composed of electrochemically-active molecules and ionic-liquid thin films
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批准号:24656410
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2012
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负责人:SUGIMURA Hiroyuki
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依托单位:
Scanning probe nanolithography on insulating substrates
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批准号:23656461
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.66万
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财政年份:2011
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负责人:SUGIMURA Hiroyuki
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依托单位:
Electronic Functions of Si modified with metal-organic complex
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批准号:20360314
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.31万
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财政年份:2008
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负责人:SUGIMURA Hiroyuki
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依托单位:
VUV microfabrication
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批准号:17206073
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.12万
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财政年份:2005
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负责人:SUGIMURA Hiroyuki
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依托单位:
Integration of organic molecular systems and semiconductor circuits by monolayer llithography
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批准号:14205107
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$25.96万
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财政年份:2002
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负责人:SUGIMURA Hiroyuki
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依托单位:
Plasma processing for carbon-based field-emission materials and their charactersit
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批准号:11450271
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.13万
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财政年份:1999
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负责人:SUGIMURA Hiroyuki
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依托单位:
Organosilane Self-Assembled Thin Resist Films for Nanoprocessing
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批准号:10555247
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.98万
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财政年份:1998
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负责人:SUGIMURA Hiroyuki
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依托单位:
海外基金