Photo and nanoprpbe integrated lithography
光和纳米粒子集成光刻
基本信息
- 批准号:12555197
- 负责人:
- 金额:$ 7.81万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2000
- 资助国家:日本
- 起止时间:2000 至 2002
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
This project has been conducted in order to integrate photolithography and nanoprobe lithography on the basis of organosilane monolayer resist films and to develop a high throughput lithgraphy process. We have obtained the followting results.1) Development of an optical lithgraphy systemUsing an excimer lamp at 172 nm, an photolithograpy system was designed and constructed. We have suceeded in projecting a lines and spaces pattern at a resolution of 1 μm.2) Detection of photoprinted pattens without developing resistsWe have developed a technique in order to observe optically printed patterns on an organisilane monolayer with high resolution and without destroying the pattern. Through surface potential measurements based on non-contact atomic force microscopy, we could find the photoprinted patterns at a spacial resolucion better than 100 nm.3) Nanoprobe drawingUsing atomic force microscopy, we have suceeded in drawing fine patterns on the monolayer resist as narrow as 20 nm.
本课题是为了在有机硅烷单层抗蚀剂薄膜的基础上,将光刻技术与纳米探针光刻技术相结合,开发一种高通量光刻工艺。我们得到了以下结果。1)光学光刻系统的开发利用172nm准分子灯,设计并构建了光刻系统。我们已经成功地以1 μm的分辨率投影出线和空间图案。2)在不产生电阻的情况下检测光印图案我们已经开发了一种技术,以便在不破坏图案的情况下以高分辨率观察有机烷单层上的光印图案。通过非接触式原子力显微镜的表面电位测量,我们可以发现空间分辨率优于100 nm的光刻图案。3)纳米探针绘制利用原子力显微镜,我们成功地在20 nm的单层抗蚀剂上绘制了精细的图案。
项目成果
期刊论文数量(48)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
N.Saito et al.: "Principle of Image Contrast in Scanning Electron Microscopy for Binary Microstructures Composed of Organosilane Self-Assembled Monolayers"J. Phys. Chem. B. 107. 664-667 (2003)
N.Saito 等:“有机硅烷自组装单分子层组成的二元微结构的扫描电子显微镜图像对比度原理”J。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
N.Saito et al.: "Decomposition Mechanism of p-Chloromethylphenyltrimethoxysilane Self-Assembled Monolayers on Vacuum Ultra Vilolet Irradiation"J. Mater. Chem.. 12. 2684-2687 (2002)
N.Saito 等:“对氯甲基苯基三甲氧基硅烷自组装单层膜在真空紫外辐射下的分解机理”J。
- DOI:
- 发表时间:
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- 影响因子:0
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K.Hayashi et al.: "Regulation of the Surface Potential of Silicon Substrates in Micrometer Scale with Organosilane Self-Assembled Monolayers"Langmuir. 18. 7469-7472 (2002)
K.Hayashi 等人:“用有机硅烷自组装单分子层调节微米级硅基底的表面电势”Langmuir。
- DOI:
- 发表时间:
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- 影响因子:0
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- 通讯作者:
L.Hong et al.: "Photoreactivity of alkylsilane self-assembled monolayer on silicon surface : its application to prepareing micropatterned ternary monolayres"Langmuir. 19. 1966-1696 (2003)
L.Hong 等人:“硅表面烷基硅烷自组装单层的光反应性:其在制备微图案三元单层中的应用”Langmuir。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
K.Hayashi et al.: "Regulation of the Surface Potential of Silicon Substrates in Micrometer Scale with Organosilane Self-Assmbled Monolayers"Langmuir. 18. 7469-7472 (2002)
K.Hayashi 等人:“用有机硅烷自组装单分子层调节微米级硅基底的表面电势”Langmuir。
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- 影响因子:0
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SUGIMURA Hiroyuki其他文献
SUGIMURA Hiroyuki的其他文献
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{{ truncateString('SUGIMURA Hiroyuki', 18)}}的其他基金
Memory devices composed of electrochemically-active molecules and ionic-liquid thin films
由电化学活性分子和离子液体薄膜组成的存储器件
- 批准号:
24656410 - 财政年份:2012
- 资助金额:
$ 7.81万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Scanning probe nanolithography on insulating substrates
绝缘基板上的扫描探针纳米光刻
- 批准号:
23656461 - 财政年份:2011
- 资助金额:
$ 7.81万 - 项目类别:
Grant-in-Aid for Challenging Exploratory Research
Electronic Functions of Si modified with metal-organic complex
金属有机配合物修饰Si的电子功能
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20360314 - 财政年份:2008
- 资助金额:
$ 7.81万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
VUV microfabrication
真空紫外微加工
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17206073 - 财政年份:2005
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$ 7.81万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Integration of organic molecular systems and semiconductor circuits by monolayer llithography
通过单层光刻集成有机分子系统和半导体电路
- 批准号:
14205107 - 财政年份:2002
- 资助金额:
$ 7.81万 - 项目类别:
Grant-in-Aid for Scientific Research (A)
Plasma processing for carbon-based field-emission materials and their charactersit
碳基场致发射材料的等离子体加工及其特性
- 批准号:
11450271 - 财政年份:1999
- 资助金额:
$ 7.81万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
Organosilane Self-Assembled Thin Resist Films for Nanoprocessing
用于纳米加工的有机硅烷自组装薄膜抗蚀剂
- 批准号:
10555247 - 财政年份:1998
- 资助金额:
$ 7.81万 - 项目类别:
Grant-in-Aid for Scientific Research (B)
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