Organosilane Self-Assembled Thin Resist Films for Nanoprocessing

1)基于气相自组装的超薄抗蚀剂薄膜的制备采用化学气相沉积法制备了有机硅烷自组装单分子膜。在SAM形成之前，使用真空紫外光产生的氧自由基对基板进行光化学清洁。自组装膜在气相中形成。该方法不需要溶剂用于涂覆和冲洗。SAM抗蚀剂的厚度可以控制在0.2 - 2.0 nm的范围内。2）SAM抗蚀剂的化学电阻率为了阐明SAM可以用作蚀刻掩模，研究了SAM对氢氟酸中的湿法蚀刻和油炸蚀刻的化学电阻率。尽管自组装膜的厚度小于2nm，但它对腐蚀仍有很好的耐受性。利用SAM掩模，可以通过等离子体刻蚀制作出50 nm深的沟槽。3）利用SAM抗蚀剂进行光刻 关于我们 艾德结合到抗蚀剂上用于VUV光刻和扫描探针光刻。光掩模的图像通过其光分解印刷在SAM上。另一方面，AFM探针扫描图案被写在SAM上，由于其电化学降解的AFM探针尖端下局部诱导。这些微米或纳米尺度的图案可以通过湿法化学蚀刻或干法等离子体蚀刻转移到Si衬底上。目前，光刻和扫描探针光刻分别制作了最小宽度为2000 nm和20 nm的特征，此外，我们还展示了基于电流注入AFM光刻的绝缘体纳米结构。采用具有导电性的多层抗蚀剂膜。该抗蚀剂由三层组成，即a-Si、其光化学氧化物和SAM，厚度分别为20、2和2nm。纳米尺度的图案首先由AFM在SAM中定义。然后通过两步抗蚀剂显影工艺将这些图案转移到a-Si层中。最后，使用显影的抗蚀剂作为蚀刻掩模对衬底SiO2进行纳米结构化。少

1) Preparation of ultra-thin resist films based on vapor phase self-assemblyOrganosilane self-assembled monolayers (SAM) have been prepared by a chemical vapor deposition method. Prior to the SAM formation, substrates were photochemically cleaned using vacuum ultra-violet light generated oxygen radicals. The SAMs were formed in vapor phase. This method requires no solvent both for coating and rinsing. Thickness of the SAM-resists could be controlled in the range of 0.2 - 2.0 nm.2) Chemical resistivity of the SAM resistsIn order to elucidate that the SAMs can be used as etching masks, chemical resistivity of the SAMs to wet etching in hydrofluoric acid and fry etching were studied. The SAMs have been found to show excellent resistivities to the etchings, although their thickness were less than 2nm. By using the SAMs mask, 50 nm deep trenches could be fabricated by the plasma etching.3) Lithography using SAM resistAn alkylsilane SMA less than 2 nm in thickness has been successfully appli … More ed to the resist for VUV-photolithography and scanning probe lithography. The image of a photomask was printed on the SAM through its photodecomposition. On the other hand, an AFM-probe scanning pattern was written on the SAM due to its electrochemical degradation locally induced beneath the AFM-probe tip. These micro or nano-scale pattern could be transferred into the Si substrates by wet chemical etching or dry plasma etching. At present, features of minimum width of 2000 nm and 20 nm were fabricated by photolithography and the scanning probe lithography, respectively.In addition, we have demonstrated nanostructuring of insulator based on the current-injecting AFM-lithography. A multilayered resist film with electrical conductivity was employed. This resist consisted of triple layers, that is, a-Si, its photochemical oxide and SAM with thicknesses of 20, 2 and 2 nm, respectively. Nanoscale patterns were first defined by AFM in the SAM. These patterns were then transferred into the a-Si layer through the 2-step resist developing process. Finally, the substrate SiO2 was nanostructured using the developed resist as an etching mask. Less