Integration of organic molecular systems and semiconductor circuits by monolayer llithography
Integration of organic molecular systems and semiconductor circuits by monolayer llithography
批准号:
14205107
负责人:
SUGIMURA Hiroyuki
金额:
$25.96万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2004
中文摘要
采用厚度为几纳米的超薄有机薄膜作为光刻用的抗蚀剂薄膜。这些抗蚀膜是由有机硅烷分子在氧化覆盖的硅衬底上制备的。该薄膜属于一类称为自组装单层(SAM)的材料。在大气氧分子存在下,用波长为172nm的真空紫外光(VUV)通过光掩膜照射有机硅烷SAM进行微图像化。VUV光降解机理归因于有机硅烷分子中C-C和其他化学键的解离激发,并随后与大气氧分子在紫外辐射下同时产生的臭氧和原子氧等活性氧进行氧化。因此,将掩模图像传输到SAM。在SAM上成功地转移了宽度为1 μm或更细的微图案。波长为172nm的紫外光是制备硅基有机地膜的有效工具。光掩膜的图像通过其光解作用被印在地对空导弹上。这种紫外光刻一般适用于任何有机材料表面的微图案化,因为它的图案化机制涉及到有机分子中C-C和其他键的裂解,随后与大气氧分子同时产生的原子氧氧化。我们也有基于局部化学反应的纳米制造工艺,用扫描探针显微镜探针,即。“纳米探针化学转化”。我们已经成功地以接近10纳米的分辨率氧化和还原了SAM表面。通过集成这种纳米探针化学转化和其他表面处理技术,从金属到聚合物的各种材料都可以在纳米尺度上组装在衬底表面上。基于这种微纳加工技术,我们展示了在硅上构建微结构有机分子体系。此外,我们还表明,使用扫描探针显微镜(开尔文探针显微镜和扫描电容显微镜)进行电学表征是阐明有机和硅系统集成功能的有力手段。少
英文摘要
Ultrathin organic films of a few nm in thickness were applied as resist films for photolithography. These resist films were prepared on oxide-covered Si substrates from organosilane molecules. The films belong to a class of materials referred to as self-assembled monolayer(SAM). An organosilane SAM was micropatterned by irradiating through a photomask with a vacuum ultra-violet(VUV) light of 172 nm in wavelength, under the presence of atmospheric oxygen molecules. The VUV photodegradation mechanism was ascribed to dissociative excitation of C-C and other chemical bondings in the organosilane molecules and to subsequently proceeded oxidation with active oxygen species such as ozone and atomic oxygen generated simultaneously by the VUV-irradiation of atmospheric oxygen molecules. Consequently, the photomask image was transferred to the SAM. Micropatterns of 1 μm in width or finer were successfully transferred on the SAM. The VUV light of 172 nm in wavelength has been an effective tool fo … More r micropatterning of organic SAMs prepared on Si substrates. The image of a photomask was printed on the SAMs through its photodecomposition. This VUV-lithography is generally applicable to micropatterning of any organic material surfaces, since its patterning mechanism involves cleavage of C-C and other bonds in organic molecules and subsequent oxidation with atomic oxygen species simultaneously generated from atmospheric oxygen molecules.We have also nanofabrication processes based on chemical reactions locally induced with a scanning probe microscope probe, that is. "nanoprobe chemical conversion". We have succeeded in oxidizing and reducing SAM surfaces at a resolution close to 10 nm. By integrating this nanoprobe chemical conversion and other surface finishing technologies, a verity of materials ranging from metals to polymers can be assembled on a substrate surface in nm scale.Based on this micro-nanofabrication technology, we demonstrated the construction of microstructured organic molecular systems on Si. Furthermore, we showed that the electrical characterization using scanning probe microscopy (Kelvin-probe microscopy and scanning capacitance microscopy) was the powerful means to elucidate integrated functions of organic and Si systems. Less
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Alkylsilane self-assembled monolayer lithography : Effects of proxity gap on photodegradation reaction and patterning resolution
烷基硅烷自组装单层光刻:邻近间隙对光降解反应和图案分辨率的影响
DOI:
--
发表时间:
2003
期刊:
Jpn.J.Appl.Phys. 42
影响因子:
--
作者:
[Hiroyuki Sugimura, Nagahiro Saito, Sun-Hyung Lee, Osamu Takai, H.Sugimura et al., Y.Wu et al., N.SAito et al., L.Hong et al., L.Hong et al.]
通讯作者:
L.Hong et al.
Micropatterning of Organosilane Self-Assembled Monolayers Using Vacuum Ultraviolet Light at 172nm : Resolution Evaluation by Kelvin Probe Force Microscopy
使用 172nm 真空紫外光对有机硅烷自组装单层进行微图案化:通过开尔文探针力显微镜进行分辨率评估
DOI:
--
发表时间:
2003
期刊:
Surf.Coat.Technol. 169-170
影响因子:
--
作者:
[Hiroyuki Sugimura, Nagahiro Saito, Sun-Hyung Lee, Osamu Takai, H.Sugimura et al., Y.Wu et al., N.SAito et al., L.Hong et al., L.Hong et al., L.Hong et al.]
通讯作者:
L.Hong et al.
Surface Potential Microscopy for Organized Molecular
有序分子的表面电势显微镜
DOI:
--
发表时间:
2002
期刊:
Appl.Surf.Sci. 188
影响因子:
--
作者:
[Hiroyuki Sugimura, Nagahiro Saito, Kazuyuki Hayashi, Noriya Maeda, Osamu Takai, H.Sugimura et al., H.Sugimura et al.]
通讯作者:
H.Sugimura et al.
フェニルアセチレンと水素終端化シリコンとの表面化学反応による有機単分子膜形成
苯乙炔与氢封端硅表面化学反应形成有机单层
DOI:
--
发表时间:
2002
期刊:
表面技術 53
影响因子:
--
作者:
[Hiroyuki Sugimura, Nagahiro Saito, Kazuyuki Hayashi, Noriya Maeda, Osamu Takai, H.Sugimura et al., H.Sugimura et al., H.Sugimura et al., K.Hayashi et al., H.Sugimura et al., H.Sugimura et al., 杉村 他]
通讯作者:
杉村 他
Surface Potential of Self-assembled Monolayer Patterned by Organosilanes : ab-initio Molecular Orbital Calculations
有机硅烷图案化的自组装单分子层的表面电势:从头算分子轨道计算
DOI:
--
发表时间:
2002
期刊:
Surf.Interf.Analysis. Vol.34 No.1
影响因子:
--
作者:
[N.Saito, K.Hayashi, H.Sugimura.O.Takai, N.Nakagiri]
通讯作者:
N.Nakagiri
共 30 条
Memory devices composed of electrochemically-active molecules and ionic-liquid thin films
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批准号:24656410
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
-
财政年份:2012
-
负责人:SUGIMURA Hiroyuki
-
依托单位:
Scanning probe nanolithography on insulating substrates
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批准号:23656461
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.66万
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财政年份:2011
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负责人:SUGIMURA Hiroyuki
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依托单位:
Electronic Functions of Si modified with metal-organic complex
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批准号:20360314
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.31万
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财政年份:2008
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负责人:SUGIMURA Hiroyuki
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依托单位:
VUV microfabrication
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批准号:17206073
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$31.12万
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财政年份:2005
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负责人:SUGIMURA Hiroyuki
-
依托单位:
Photo and nanoprpbe integrated lithography
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批准号:12555197
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$7.81万
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财政年份:2000
-
负责人:SUGIMURA Hiroyuki
-
依托单位:
Plasma processing for carbon-based field-emission materials and their charactersit
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批准号:11450271
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.13万
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财政年份:1999
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负责人:SUGIMURA Hiroyuki
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依托单位:
Organosilane Self-Assembled Thin Resist Films for Nanoprocessing
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批准号:10555247
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.98万
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财政年份:1998
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负责人:SUGIMURA Hiroyuki
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依托单位:
海外基金