Study of Large-Area Diamond Film Deposition using Planar Surface-Wave Plasma
Study of Large-Area Diamond Film Deposition using Planar Surface-Wave Plasma
批准号:
11480106
负责人:
NAGATSU Masaaki
金额:
$3.07万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B).
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000
中文摘要
利用平面表面波等离子体和薄膜诊断技术对大面积类金刚石(DLC)薄膜的沉积性能进行了相关研究,旨在建立等离子体CVD法大面积类金刚石薄膜沉积技术。主要结果如下:1。实验装置的安装:首先,我们制备了在2.45 GHz微波激励下直径为40cm的平面表面波等离子体,用于DLC薄膜的沉积。衬底台与温控设备已安装在室内。薄膜沉积等离子体的诊断:我们在Ar或He中进行了2.45 GHz微波激发表面波等离子体参数的空间分布测量。我们发现,在等离子体向下流区域,在衬底级以上10 cm半径范围内,获得了±5%的空间均匀性。类金刚石膜的沉积性能:我们发现在室温下,在充满he和甲烷气体的表面波等离子体中,在硅衬底上沉积了直径超过10 cm的均匀DLC膜。沉积速率取决于He和甲烷的气体流速。当He气体流速为280 sccm,甲烷气体流速为6 sccm时,膜沉积速率为16 nm/min。场发射特性及薄膜其他性能:通过对氢化DLC薄膜的场发射测量,得到了1 μA/cm2下4 V/μm的阈值场,与晶体金刚石薄膜相当。研究了等离子体离子轰击表面处理、氮掺杂、衬底偏置和气体混合比对场发射和薄膜特性的影响。本研究成果:在1999-2000年共发表9篇期刊论文,在国际会议上发表论文11篇,在国内学术会议上发表论文34篇(其中会议论文2篇)。少
英文摘要
We have been carried out the research associated with the deposition performance of large-area diamond-like carbon (DLC) films using planar surface-wave plasma and the film diagnostics, aiming at establishing the large-area thin film deposition technique using the plasma CVD method. Main results are listed in the following.1. Installation of experimental setup : First, we have prepared the 40cm-diameter planar surface wave plasma excited by 2.45 GHz microwaves for DLC thin film deposition. Substrate stage with a temperature-control equipment has been installed inside the chamber.2. Diagnostics of plasma for film deposition : We have carried out the measurements of spatial distribution of plasma parameters in the 2.45 GHz microwave excited surface-wave plasmas in Ar or He. We found that the spatial uniformity within ±5% was obtained over a radius of 10 cm above the substrate stage in the plasma down-streaming region.3. Performance of diamond-like carbon film deposition : We found that t … More he uniform DLC film over a diameter of 10 cm was deposited on the silicon substrate at room temperature in a surface-wave plasma filled with He and methane gas. Deposition rate depends on the gas flow rates of He and methane. When the gas flow rates wre 280 sccm in He and 6 sccm in methane, we obtained the film deposition rate of 16 nm/min.4. Field emission characteristics and other film performances : From the field emission measurements of hydrogenated DLC films, a threshold field of 4 V/μm at 1 μA/cm2 was obtained, which is comparable to that of crystalline diamond film. Effects of surface processing by plasma ion bombardments, nitrogen doping, substrate biasing and gas mixture ratio on field emission and film characteristics have been also investigated.5. Results of the present research : We have published the present results in 9 journal papers and have reported 11 papers in the international conferences and 34 papers (2 symposium papers) in the domestic symposium and meetings in 1999-2000. Less
期刊论文(136)
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M.Nagatsu: "Plasma Synthesis of Carbon-Metal Clusters by Means of Arc Plasma Discharges"Proc. of 24th Int.Conf. on Phenomena in Ionized Gases, Warsaw, Poland. Vol.4. 131-132 (1999)
M.Nagatsu:“通过电弧等离子体放电等离子体合成碳金属簇”Proc。
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M. Nagatsu: "スロットアンテナ励起915MHzUHFプラズマの表面波モード特性"Proc. of 17th Symp. of Plasma Processing. 295-298 (2000)
M. Nagatsu:“缝隙天线激发的 915MHz UHF 等离子体的表面波模式特性”Proc. 第 17 次等离子体处理 (2000)。
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I.Ghanashev: "Test-Wave Measurements of Microwave Absorption Efficiency in a Planar Surface-Wave Plasma Device"Jpn.J.Appl.Phys.. Vol.38. 4313-4320 (1999)
I.Ghanashev:“平面表面波等离子体装置中微波吸收效率的测试波测量”Jpn.J.Appl.Phys.. Vol.38。
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T.Sano: "Effect of Film Thickness on Field Emission Characteristics of Surface-Wave Deposted Hydrogenated Amorphous Carbon Films"Diamond Related Materials. (to be presented). (2001)
T.Sano:“膜厚对表面波沉积氢化非晶碳膜场发射特性的影响”金刚石相关材料。
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M.Nagatsu: "Characteristics of Ultrahigh-Frequency Surface Wave Plasmas Excited at 915 MHz"Jpn.J.Appl.Phys.. Vol.38. L679-L682 (1999)
M.Nagatsu:“915 MHz 激发的超高频表面波等离子体的特性”Jpn.J.Appl.Phys.. Vol.38。
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共 44 条
Development of innovative plasma process technologies to realize high-performance and multi-functional material surfaces and their applications
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批准号:17H02804
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.48万
-
财政年份:2017
-
负责人:NAGATSU Masaaki
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依托单位:
Cesium Removal with Magnetic Nanoparticles Surface-functionalized by Plasma Discharge in Liquid with Bubble
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批准号:25600120
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2013
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负责人:NAGATSU Masaaki
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依托单位:
Development of Plasma Processing Technology of Bio-Polymer Materials at Low-temperature
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批准号:20340161
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.31万
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财政年份:2008
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负责人:NAGATSU Masaaki
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依托单位:
Development of Low-temperature Sterilization Technique Using Microwave Plasma and Its Medical Application
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批准号:16340180
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.79万
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财政年份:2004
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负责人:NAGATSU Masaaki
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依托单位:
Development of High-Pressure, High-Density Micorwave Plasma Source and Its Application to Large-area Thin Film Processing
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批准号:14580516
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.3万
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财政年份:2002
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负责人:NAGATSU Masaaki
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依托单位:
Clarification of Microwave Absorption Mechanism in Surface Wave Plasma and Optimization of Plasma-Antenna Coupling
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批准号:09680461
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.79万
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财政年份:1997
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负责人:NAGATSU Masaaki
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依托单位:
海外基金