Study of Large-Area Diamond Film Deposition using Planar Surface-Wave Plasma

利用平面表面波等离子体沉积大面积金刚石薄膜的研究

• 批准号: 11480106
• 负责人: NAGATSU Masaaki
• 金额: $ 3.07万
• 依托单位: Nagoya University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B).
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11480106/
• 关键词: plasma CVD; surface wave plasma; microwave plasma; diamond film; field emission; diamond-like carbon film; アモルファスカーボン膜; ダイヤモンド薄膜; 電子エミッター; 電子電界放出

We have been carried out the research associated with the deposition performance of large-area diamond-like carbon (DLC) films using planar surface-wave plasma and the film diagnostics, aiming at establishing the large-area thin film deposition technique using the plasma CVD method. Main results are listed in the following.1. Installation of experimental setup : First, we have prepared the 40cm-diameter planar surface wave plasma excited by 2.45 GHz microwaves for DLC thin film deposition. Substrate stage with a temperature-control equipment has been installed inside the chamber.2. Diagnostics of plasma for film deposition : We have carried out the measurements of spatial distribution of plasma parameters in the 2.45 GHz microwave excited surface-wave plasmas in Ar or He. We found that the spatial uniformity within ±5% was obtained over a radius of 10 cm above the substrate stage in the plasma down-streaming region.3. Performance of diamond-like carbon film deposition : We found that t … More he uniform DLC film over a diameter of 10 cm was deposited on the silicon substrate at room temperature in a surface-wave plasma filled with He and methane gas. Deposition rate depends on the gas flow rates of He and methane. When the gas flow rates wre 280 sccm in He and 6 sccm in methane, we obtained the film deposition rate of 16 nm/min.4. Field emission characteristics and other film performances : From the field emission measurements of hydrogenated DLC films, a threshold field of 4 V/μm at 1 μA/cm2 was obtained, which is comparable to that of crystalline diamond film. Effects of surface processing by plasma ion bombardments, nitrogen doping, substrate biasing and gas mixture ratio on field emission and film characteristics have been also investigated.5. Results of the present research : We have published the present results in 9 journal papers and have reported 11 papers in the international conferences and 34 papers (2 symposium papers) in the domestic symposium and meetings in 1999-2000. Less

为了建立等离子体CVD法大面积薄膜沉积技术，开展了平面表面波等离子体大面积类金刚石（DLC）薄膜沉积性能及薄膜诊断的研究。主要研究结果如下：1.实验装置的搭建：首先，我们制备了直径为40 cm的平面表面波等离子体，用2.45GHz的微波激发等离子体沉积DLC薄膜。基片台与温控设备已安装在室内。2.薄膜沉积等离子体的诊断：我们已经进行了测量的等离子体参数的空间分布在2.45 GHz的微波激发表面波等离子体在Ar或He。我们发现，在等离子体下游区域，在基片台上方10 cm半径范围内获得了±5%的空间均匀性.类金刚石薄膜沉积性能：我们发现， ...更多信息 在室温下，用充满He和甲烷气体的表面波等离子体在硅衬底上沉积了直径为10 cm的均匀DLC膜。沉积速率取决于He和甲烷的气体流速。当氦气流量为280 sccm，甲烷流量为6 sccm时，薄膜沉积速率为16 nm/min.场发射特性及其它薄膜性能：对氢化类金刚石薄膜的场发射测试表明，在1 μA/cm ~ 2时，其阈值场为4V/μm，与晶态金刚石薄膜相当。研究了等离子体离子轰击表面处理、氮掺杂、衬底偏压和气体混合比对薄膜场发射和特性的影响.研究结果：1999-2000年在9种期刊上发表了本研究结果，在国际会议上发表了11篇论文，在国内学术会议上发表了34篇论文（2篇专题论文）。少

项目成果

M.Nagatsu: "Plasma Synthesis of Carbon-Metal Clusters by Means of Arc Plasma Discharges"Proc. of 24th Int.Conf. on Phenomena in Ionized Gases, Warsaw, Poland. Vol.4. 131-132 (1999)

M.Nagatsu：“通过电弧等离子体放电等离子体合成碳金属簇”Proc。

M. Nagatsu: "スロットアンテナ励起915MHzUHFプラズマの表面波モード特性"Proc. of 17th Symp. of Plasma Processing. 295-298 (2000)

M. Nagatsu：“缝隙天线激发的 915MHz UHF 等离子体的表面波模式特性”Proc. 第 17 次等离子体处理 (2000)。

I.Ghanashev: "Test-Wave Measurements of Microwave Absorption Efficiency in a Planar Surface-Wave Plasma Device"Jpn.J.Appl.Phys.. Vol.38. 4313-4320 (1999)

I.Ghanashev：“平面表面波等离子体装置中微波吸收效率的测试波测量”Jpn.J.Appl.Phys.. Vol.38。

T.Sano: "Effect of Film Thickness on Field Emission Characteristics of Surface-Wave Deposted Hydrogenated Amorphous Carbon Films"Diamond Related Materials. (to be presented). (2001)

T.Sano：“膜厚对表面波沉积氢化非晶碳膜场发射特性的影响”金刚石相关材料。

M.Nagatsu: "Characteristics of Ultrahigh-Frequency Surface Wave Plasmas Excited at 915 MHz"Jpn.J.Appl.Phys.. Vol.38. L679-L682 (1999)

M.Nagatsu：“915 MHz 激发的超高频表面波等离子体的特性”Jpn.J.Appl.Phys.. Vol.38。