Study of Large-Area Diamond Film Deposition using Planar Surface-Wave Plasma
Study of Large-Area Diamond Film Deposition using Planar Surface-Wave Plasma
批准号:
11480106
负责人:
NAGATSU Masaaki
金额:
$3.07万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B).
财政年份:
1999
资助国家:
日本
项目状态:
已结题
起止时间:
1999 至 2000
中文摘要
我们开展了平面表面波等离子体大面积类金刚石(DLC)薄膜沉积性能和薄膜诊断的研究,旨在建立等离子体CVD大面积薄膜沉积技术。主要研究成果如下:1。实验装置的安装:首先,我们制备了直径为40 cm的2.45 GHz微波激励的平面表面波等离子体,用于DLC薄膜的沉积。基片台内已安装了温控设备。薄膜等离子体诊断:测量了2.45 GHz微波激励表面波Ar或He等离子体中等离子体参数的空间分布。我们发现,在等离子体下流区,在衬底平台上方10 cm半径范围内,可以获得±5%的空间均匀性。类金刚石薄膜的沉积性能:我们发现t…在充有氦气和甲烷气体的表面波等离子体中,室温下在硅衬底上沉积了直径超过10 cm的均匀的类金刚石薄膜。沉积速率取决于氦气和甲烷的气体流量。当氦气流量为280sccm,甲烷气流量为6sccm时,薄膜沉积速率为16 nm/min。场发射特性和其他薄膜性能:通过对氢化类金刚石薄膜的场发射测量,获得了阈值电场为4V/μm,电流密度为1μA/cm~2,与晶体金刚石薄膜相当。研究了等离子体离子轰击表面处理、氮掺杂、衬底偏压和气体混合比对场发射和薄膜特性的影响。研究结果:我们在9篇期刊论文上发表了目前的研究成果,并在1999-2000年的国际会议上发表了11篇论文,在国内研讨会和会议上发表了34篇论文(2篇研讨会论文)。较少
英文摘要
We have been carried out the research associated with the deposition performance of large-area diamond-like carbon (DLC) films using planar surface-wave plasma and the film diagnostics, aiming at establishing the large-area thin film deposition technique using the plasma CVD method. Main results are listed in the following.1. Installation of experimental setup : First, we have prepared the 40cm-diameter planar surface wave plasma excited by 2.45 GHz microwaves for DLC thin film deposition. Substrate stage with a temperature-control equipment has been installed inside the chamber.2. Diagnostics of plasma for film deposition : We have carried out the measurements of spatial distribution of plasma parameters in the 2.45 GHz microwave excited surface-wave plasmas in Ar or He. We found that the spatial uniformity within ±5% was obtained over a radius of 10 cm above the substrate stage in the plasma down-streaming region.3. Performance of diamond-like carbon film deposition : We found that t … More he uniform DLC film over a diameter of 10 cm was deposited on the silicon substrate at room temperature in a surface-wave plasma filled with He and methane gas. Deposition rate depends on the gas flow rates of He and methane. When the gas flow rates wre 280 sccm in He and 6 sccm in methane, we obtained the film deposition rate of 16 nm/min.4. Field emission characteristics and other film performances : From the field emission measurements of hydrogenated DLC films, a threshold field of 4 V/μm at 1 μA/cm2 was obtained, which is comparable to that of crystalline diamond film. Effects of surface processing by plasma ion bombardments, nitrogen doping, substrate biasing and gas mixture ratio on field emission and film characteristics have been also investigated.5. Results of the present research : We have published the present results in 9 journal papers and have reported 11 papers in the international conferences and 34 papers (2 symposium papers) in the domestic symposium and meetings in 1999-2000. Less
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I.Ghanashev: "Test-Wave Measurements of Microwave Absorption Efficiency in a Planar Surface-Wave Plasma Device"Jpn.J.Appl.Phys.. Vol.38. 4313-4320 (1999)
I.Ghanashev:“平面表面波等离子体装置中微波吸收效率的测试波测量”Jpn.J.Appl.Phys.. Vol.38。
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M.Nagatsu: "Plasma Synthesis of Carbon-Metal Clusters by Means of Arc Plasma Discharges"Proc. of 24th Int.Conf. on Phenomena in Ionized Gases, Warsaw, Poland. Vol.4. 131-132 (1999)
M.Nagatsu:“通过电弧等离子体放电等离子体合成碳金属簇”Proc。
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M. Nagatsu: "スロットアンテナ励起915MHzUHFプラズマの表面波モード特性"Proc. of 17th Symp. of Plasma Processing. 295-298 (2000)
M. Nagatsu:“缝隙天线激发的 915MHz UHF 等离子体的表面波模式特性”Proc. 第 17 次等离子体处理 (2000)。
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T.Sano: "Effect of Film Thickness on Field Emission Characteristics of Surface-Wave Deposted Hydrogenated Amorphous Carbon Films"Diamond Related Materials. (to be presented). (2001)
T.Sano:“膜厚对表面波沉积氢化非晶碳膜场发射特性的影响”金刚石相关材料。
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M.Nagatsu: "Characteristics of Ultrahigh-Frequency Surface Wave Plasmas Excited at 915 MHz"Jpn.J.Appl.Phys.. Vol.38. L679-L682 (1999)
M.Nagatsu:“915 MHz 激发的超高频表面波等离子体的特性”Jpn.J.Appl.Phys.. Vol.38。
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共 44 条
Development of innovative plasma process technologies to realize high-performance and multi-functional material surfaces and their applications
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批准号:17H02804
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.48万
-
财政年份:2017
-
负责人:NAGATSU Masaaki
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依托单位:
Cesium Removal with Magnetic Nanoparticles Surface-functionalized by Plasma Discharge in Liquid with Bubble
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批准号:25600120
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2013
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负责人:NAGATSU Masaaki
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依托单位:
Development of Plasma Processing Technology of Bio-Polymer Materials at Low-temperature
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批准号:20340161
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.31万
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财政年份:2008
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负责人:NAGATSU Masaaki
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依托单位:
Development of Low-temperature Sterilization Technique Using Microwave Plasma and Its Medical Application
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批准号:16340180
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.79万
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财政年份:2004
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负责人:NAGATSU Masaaki
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依托单位:
Development of High-Pressure, High-Density Micorwave Plasma Source and Its Application to Large-area Thin Film Processing
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批准号:14580516
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.3万
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财政年份:2002
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负责人:NAGATSU Masaaki
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依托单位:
Clarification of Microwave Absorption Mechanism in Surface Wave Plasma and Optimization of Plasma-Antenna Coupling
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批准号:09680461
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.79万
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财政年份:1997
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负责人:NAGATSU Masaaki
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依托单位:
海外基金