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Development of Large-area High-quality LCD Processing by Surface Wave Plasma

表面波等离子体大面积高品质LCD加工的开发

基本信息

批准号：
12358004
负责人：
SUGAI Hideo
金额：
$ 15.39万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12358004/
关键词：
surface wave plasma slot antenna large area plasma electron energy distribution function liquid crystal display poly-silicon silicon oxidation oxygen radical 体積加熱表面加熱

项目摘要

To date, a capacitivery coupled plasma at 13.56 MHz has been used in plasma-assiste manufacturing of liquid crystal display (LCD) devices. However, this type of plasma source is facing a difficulty in large-area processing due to its low plasma density and non-uniformity. In order to overcome these problems, we use a new source called surface wave plasma (SWP) which is produced by microwave discharge. This project aims to make the plasma high-density and large-area, and to develop large-area LCD process for formation of poly-silicon films on a cold substrate.The results obtained are summarized below.(1) <Optimization of discharge antenna>____ : Stable microwave plasma without density jump was obtained by introducing a periodic structure at the interface at the plasma interface.(2) <Control of electron energy distribution Junction (EEDF)>____ : The EEDF measurement and fluid mode analysis revealed that the electron temperature can be controlled by selecting an additive rare gas species (He, Ne, Ar, Kr, Xe).(3) <Large-area plasma production>____ : A meter-size (1 m x 0.3 m) plasma was produced by microwave discharge, where some problems were made clear on mechanical strength of window and plasma in-homogeneity.(4) <Oxygen plasma for gate oxidation>____ : Behavior of oxygen radical in SWP was investigated for different O_2 percentage in argon to realize ultra-thin gate SiO_2 layer by low-temperature plasma oxidation.(5) <Low temperature growth of poly-Si films>____0 : The SWP with SiH_4 highly diluted by H_2 enabled poly-Si film formation at 400℃, which is expected to give high mobility TFTs.

迄今为止，13.56 MHz的电容耦合等离子体已用于等离子体辅助制造液晶显示（LCD）器件。然而，由于等离子体密度低和不均匀性，这种等离子体源在大面积加工中面临困难。为了克服这些问题，我们使用了一种由微波放电产生的表面波等离子体（SWP）。本项目旨在实现等离子体的高密度和大面积化，开发在冷衬底上形成多晶硅薄膜的大面积液晶显示工艺。所得结果总结如下。(1) <放电天线优化>____：通过在等离子体界面处引入周期结构，获得了无密度跳变的稳定微波等离子体。(2) <控制电子能量分布结(EEDF)>____: EEDF测量和流体模式分析表明，可以通过选择添加稀有气体（He, Ne, Ar, Kr, Xe）来控制电子温度。(3) <大面积等离子体产生>____：利用微波放电产生了一米大小（1 m × 0.3 m）的等离子体，明确了窗口机械强度和等离子体均匀性等问题。(4) <氧等离子体氧化栅极>____：研究了不同氧含量氩气条件下SWP中氧自由基的行为，通过低温等离子体氧化实现超薄栅极SiO_2层。(5) <低温生长的多晶硅薄膜>____0：被H_2高度稀释的SiH_4 SWP在400℃下形成多晶硅薄膜，有望得到高迁移率的tft。