Development of Large-area High-quality LCD Processing by Surface Wave Plasma

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To date, a capacitivery coupled plasma at 13.56 MHz has been used in plasma-assiste manufacturing of liquid crystal display (LCD) devices. However, this type of plasma source is facing a difficulty in large-area processing due to its low plasma density and non-uniformity. In order to overcome these problems, we use a new source called surface wave plasma (SWP) which is produced by microwave discharge. This project aims to make the plasma high-density and large-area, and to develop large-area LCD process for formation of poly-silicon films on a cold substrate.The results obtained are summarized below.(1) <Optimization of discharge antenna>____ : Stable microwave plasma without density jump was obtained by introducing a periodic structure at the interface at the plasma interface.(2) <Control of electron energy distribution Junction (EEDF)>____ : The EEDF measurement and fluid mode analysis revealed that the electron temperature can be controlled by selecting an additive rare gas species (He, Ne, Ar, Kr, Xe).(3) <Large-area plasma production>____ : A meter-size (1 m x 0.3 m) plasma was produced by microwave discharge, where some problems were made clear on mechanical strength of window and plasma in-homogeneity.(4) <Oxygen plasma for gate oxidation>____ : Behavior of oxygen radical in SWP was investigated for different O_2 percentage in argon to realize ultra-thin gate SiO_2 layer by low-temperature plasma oxidation.(5) <Low temperature growth of poly-Si films>____0 : The SWP with SiH_4 highly diluted by H_2 enabled poly-Si film formation at 400℃, which is expected to give high mobility TFTs.