Development of High-Pressure, High-Density Micorwave Plasma Source and Its Application to Large-area Thin Film Processing
Development of High-Pressure, High-Density Micorwave Plasma Source and Its Application to Large-area Thin Film Processing
批准号:
14580516
负责人:
NAGATSU Masaaki
金额:
$2.3万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2003
中文摘要
本研究旨在发展高气压下的高密度微波等离子体,并将其应用于大面积薄膜加工。主要结果如下。(1)微波等离子体装置的组装:我们组装了直径为60 cm的大面积等离子体装置。利用一种新型的直径为50 cm的内置式微波发射器进行了大面积等离子体产生实验。在设计和优化微波发射器时,我们使用场模拟器MAFIA进行了场分析,并展示了如何设计等离子体放大所需的发射器。(2)大面积微波等离子体的产生:我们使用Ar或He进行了等离子体产生实验,表明在0.1托的压力下,微波功率为1千瓦时,可以产生直径超过40厘米的均匀等离子体。(3)大面积等离子体的应用:作为微波等离子体在等离子体CVD中的应用,我们在10-15 Torr下使用直径为40 cm的表面波等离子体进行了碳纳米管的沉积,并显示了制备空间均匀的纳米管的可能性。此外,我们尝试将它们应用于医疗器械的灭菌,发现可以在低温下非常快速地对其进行灭菌。(4)高压-微波等离子体的制备:我们研制了一种新型的微波等离子体装置,该装置在50 Torr的高压下使用两个微波。我们证明,它可以扩大等离子体尺寸的两倍相比,传统的CVD设备。(5)研究结果总结:本研究共获得期刊论文8篇(其中2篇正在投稿)、专著2部(作为合著者)、国际会议论文24篇、国内学术会议口头或海报展示45篇、国家专利申请5项、国外专利1项。应用程序.
英文摘要
In the present research, we aimed at developing the high-density microwave plasma operated at high pressure and applying it to the large-area thin film processing. Main results are listed in the followings.(1)Enlargement of Microwave Plasma Device : We assembled the large-area plasma device with a diameter of 60 cm. Using a novel internally mounted microwave launcher with a diameter of 50 cm, we performed the experiments of large-area plasma production. In designing and optimizing the microwave launcher, we carried out the field analysis using the field simulator, MAFIA, and showed how to design the launcher required for the plasma enlargement.(2)Production of Large-area Microwave Plasma : We performed the plasma production experiments using Ar or He and showed that we could produced the uniform plasma over 40 cm in diameter when microwave power was 1 kW at pressure of 0.1 Torr..(3)Application of Large-area Plasmas : As applications of microwave plasma to plasma CVD, we carried out the deposition of carbon nanotube using 40cm diameter surface wave plasma at 10-15 Torr, and showed a possibility of producing spatially uniform nanotubes. Furthermore, we tried to apply them to the sterilization of medical equipment and found that one could sterilized them very rapidly at low temperature.(4)Production of High Pressure-Microwave Plasma : We developed the novel microwave plasma device using two microwaves at high pressure of 50 Torr. We demonstrated that it could enlarge the plasma size twice compared with that of conventional CVD devices.(5)Summary of Research Results : Results of the present research were 8 articles (two under sub ission) in Journals, 2 books (as co-authors), 24 contributions of International conferences, 45 oral or poster presentation at domestic academic meeting, 5 national patents application and 1 foreign patent. application.
期刊论文(218)
专著(0)
科研奖励(0)
会议论文
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M.Nagatsu: "Experimental Study of Electron Energy Distribution Function in Large-Area Surface Wave Plasma"Proc. of 7th Joint International Conference on Advanced Science and Technology. 203-206 (2002)
M.Nagatsu:“大面积表面波等离子体中电子能量分布函数的实验研究”Proc。
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S.Kurita: "Characteristics of Metal Composited Amorphous Carbon Films Prepared with Surface Wave Plasma"Proc. of 7th Joint International Conference on Advanced Science and Technology. 372-375 (2002)
S.Kurita:“表面波等离子体制备金属复合非晶碳薄膜的特性”Proc。
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M.Nagatsu: "Diagnostics of Plasma Ball Formed in High Pressure Microwave Plasma For Diamond Film Synthesis"Diamond Related Materials. Vol.11/3-6. 562-566 (2002)
M.Nagatsu:“用于金刚石薄膜合成的高压微波等离子体中形成的等离子体球的诊断”金刚石相关材料。
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M.Nagatsu: "Large-Area Microwave Plasma Device Using Internally Mounted Planar Launcher"Abstracts of 5th Int. Workshop on Microwave Discharges : Fundamentals and Applications. 31 (2003)
M.Nagatsu:“使用内部安装平面发射器的大面积微波等离子体装置”第五届国际摘要。
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電気学会・マイクロ波プラズマ調査専門委員会編(分担執筆): "マイクロ波プラズマの技術"オーム社. 272 (2003)
日本电气工程学会微波等离子体研究专家委员会编(合着):《微波等离子体技术》Ohmsha 272(2003)。
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共 64 条
Development of innovative plasma process technologies to realize high-performance and multi-functional material surfaces and their applications
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批准号:17H02804
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.48万
-
财政年份:2017
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负责人:NAGATSU Masaaki
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依托单位:
Cesium Removal with Magnetic Nanoparticles Surface-functionalized by Plasma Discharge in Liquid with Bubble
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批准号:25600120
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2013
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负责人:NAGATSU Masaaki
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依托单位:
Development of Plasma Processing Technology of Bio-Polymer Materials at Low-temperature
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批准号:20340161
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.31万
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财政年份:2008
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负责人:NAGATSU Masaaki
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依托单位:
Development of Low-temperature Sterilization Technique Using Microwave Plasma and Its Medical Application
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批准号:16340180
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.79万
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财政年份:2004
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负责人:NAGATSU Masaaki
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依托单位:
Study of Large-Area Diamond Film Deposition using Planar Surface-Wave Plasma
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批准号:11480106
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$3.07万
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财政年份:1999
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负责人:NAGATSU Masaaki
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依托单位:
Clarification of Microwave Absorption Mechanism in Surface Wave Plasma and Optimization of Plasma-Antenna Coupling
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批准号:09680461
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.79万
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财政年份:1997
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负责人:NAGATSU Masaaki
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依托单位:
海外基金