VAN DER WAALS EPITAXY OF THIN C_<60> FILMS ON SEVERAL SUBSTRATES AND THEIR MICROTRIBOLOGICAL PROPERTIES

几种基底上 C_<60> 薄膜的范德瓦尔斯外延及其微摩擦学性能

• 批准号: 12450068
• 负责人: OHMAE Nobuo
• 金额: $ 4.86万
• 依托单位: Kobe University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450068/
• 关键词: C_<60>; van del Waals; Domain Growth; Microtribology; Micro machine; フラーレン; ファンデルワールスエピタキシー; 原子間力顕微鏡; 二硫化モリブデン; シリコン; MBE

In this study, surface morphology and growth phenomena of thin C_<60> films epitaxially grown on several substrates were studied for nanotribological applications. C_<60> evaporated from the Knudsen-cell passes through a vacuum of 10^<-8> Pa to condensate a film on substrates, heated at 100℃~250℃. The epitaxial growth of C_<60> thin film was monitored by the Reflection High Energy Electron Deflection (RHEED). Surface morphological images of the epitaxially grown C_<60> films on several substrates were obtained using an atomic force microscope (AFM). From this in-situ analysis with RHEED, it has been found that the C_<60> on MoS_2 substrate makes an epitaxial growth with the lattice spacing of 1.0nm at the substrate temperature of 150℃, which exactly is the spacing of bulk C_<60>. The size of the domain of C_<60> thin film became large at an increased substrate temperatures. Thin C_<60> films with van der Waals epitaxy showed characteristic triangular domain. This result coincides well with the mirror-symmetrical growth of C_<60> films analyzed by RHEED. For H-terminated Si(001) substrate, an epitaxial growth was not found. Cone-like islands with a diameter and a height of several tens nm were formed on H-terminated Si(001) substrate.

在这项研究中，我们研究了在几种衬底上外延生长的C&lt；60&gt；薄膜的表面形貌和生长现象，以应用于纳米摩擦学。从克努森电池蒸发出来的C_(60)通过10^~(-8)帕的真空冷凝基片上的薄膜，加热到100℃~250℃。用反射高能电子偏转(RHEED)测量了C&lt；60&gt；薄膜的外延生长过程。用原子力显微镜(AFM)获得了在几种衬底上外延生长的C&lt；60&gt；薄膜的表面形貌图像。由RHEED的原位分析发现，在150℃的衬底温度下，MoS_2衬底上的C&lt；60&gt；外延生长的晶格间距为1.0 nm，这正是块体C&lt；60&gt；的晶格间距。随着衬底温度的升高，C&lt；60&gt；薄膜的磁畴尺寸变大。采用范德华外延的C&lt；60&gt；薄膜呈现出典型的三角区结构。这一结果与RHEED分析的C&lt；60&gt；薄膜的镜面对称生长相吻合。对于H-终止的Si(001)衬底，没有发现外延生长。在H-端基Si(001)衬底上形成了直径为几十nm、高度为几十nm的锥状岛。

项目成果

Ohmae, N.: "MBE of Fullerene C_<60> and its Tribological Application"International Conference on Metallurgical Coatings and Thin Films, California, April 10-14. 110 (2000)

Ohmae, N.：“富勒烯 C_<60> 的 MBE 及其摩擦学应用”冶金涂层和薄膜国际会议，加利福尼亚州，4 月 10-14 日。

Tagawa M.: "Micro-and Macrotribological properties of solid lubricants in a simulated low earth orbit space environment"Proceedings of the 6th International Space Conference, Protection of Materials and Structures from the Space Environment, May 1-3, 2002

Takawa M.：“模拟低地球轨道空间环境中固体润滑剂的微观和宏观摩擦学特性”第六届国际空间会议论文集，保护材料和结构免受空间环境影响，2002 年 5 月 1-3 日

田川雅人: "低摩擦発現のための表面創成の現状と将来展望-DLC固体潤滑材の現状と原子ビームによる表面自由エネルギー制御-"平成14年度ものづくりクラスター協議会産学官連携促進事業 分野設定型研究「表面処理技術分野」第2回セミナー講演資料、大阪、2月18日. 45-52 (2003)

田川雅人：“实现低摩擦的表面创造的现状和未来前景 - DLC固体润滑剂的现状和使用原子束的表面自由能控制 -”2002年制造业集群委员会产学官合作促进项目实地研究《表面处理技术领域》第 2 次研讨会讲座资料，大阪，2 月 18 日。45-52 (2003)

Ohmae, N. et al.: "Microtribological properties of fullerence C_<60>, carbon onion and other advanced carbon materials"Proc. 2^<nd> International Workshop on Microtribology. (in press). (2002)

Ohmae, N. 等人：“富勒 C_<60>、碳洋葱和其他先进碳材料的微观摩擦学特性”Proc.

Tagawa, M.: "Micro- and Macrotribological properties of solid lubricants in a simulated low earth orbit space environment in: Proceedings of the 6th International Space Conference, Protection of Materials and Structures from the Space Environment, Toronto

Takawa, M.：“模拟低地球轨道空间环境中固体润滑剂的微观和宏观摩擦学特性，见：第六届国际空间会议论文集，保护材料和结构免受空间环境影响，多伦多