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Study on Surface Interaction between Atomic Oxygen and MoS_2 and Ultra Low Friction (ULF) Using Their Recombination PRocesses

原子氧与MoS_2表面相互作用及超低摩擦(ULF)复合过程研究

基本信息

批准号：
05555051
负责人：
OHMAE Nobuo
金额：
$ 6.78万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research (B)
财政年份：
1993
资助国家：
日本
起止时间：
1993 至 1994
项目状态：
已结题

项目摘要

The atomic oxygen generator/ultra-high vacuum tribometer/Auger emission spectrometer has newly been designed and manufactured, and tribolocal properties of single crystal, sputtered, and organic binded MoS_2 have been investigated. In order to simulate the environment in low earth orbit, the energy and flux of atomic oxygen beam were set at 5 eV and 5.5*10^<15>atoms/m^2・_S. For MoS_2 singlecrystal, friction coefficient increased from the initial value of 0.03 to larger values, and after 5 hours'irradiation, the friction coefficient over 2.0 resulted. None of S and Mo Auger peaks were identified from that surface, and transfer of Ti, which is the mating material to MoS_2, was detected. Similar tendency was recognized for sputtered MoS_2, and it was found by AES and XPS that the increased friction is caused by the formation of MoO_3, MoO_2, and MoO_<x2>. Though organic binded MoS_2 showed a relatively high friction coefficient of 0.05 before exposure to atomic oxygen, the friction coefficient after 5 hours' exposure to atomic oxygen was low at 0.1. For organic binded films, C and O incorporated in polyamide-imide may have a possible suppressing action from the gasification of S.The oxydized layr for organic binded MoS_2 was thin, so that more stable tribological properties of organic binded MoS_2 than those of single crystal and sputtered MoS_2 can be caused by less gasification of S.By designing a sleeve near the MoS_2 specimen, a recombination of atomic oxygen into molecular state was attempted. Friction experiments at this environment showed a good value of 0.01. In addition, an introduction of CO gas enhanced the ultra low friction, but the irradiation of UV increased the friction. Laser desorption spectroscopy inside the AES chamber detected SO_3 during exposure to atomic oxygen. It was concluded that the ultra low friction requires the stabilization of S on MoS_2 surface and the mesoscopic analysis of surface integrity of MoS_2 crystal.

设计制造了原子制氧机/超高真空摩擦计/俄歇发射光谱仪，研究了单晶、溅射和有机结合MoS_2的摩擦局部性能。为了模拟近地轨道环境，原子氧束的能量和通量被设定为5 eV和5.5*10^<15>原子/m^2·_S。对于MoS_2单晶，摩擦系数由初始值0.03逐渐增大，辐照5 h后摩擦系数大于2.0。在该表面未发现S和Mo俄歇峰，并检测到配合物Ti向MoS_2的转移。溅射的MoS_2也有类似的趋势，通过AES和XPS分析发现，摩擦的增加是由MoO_3、MoO_2和MoO_<x2>的形成引起的。有机结合MoS_2在暴露于原子氧前的摩擦系数较高，为0.05，而暴露于原子氧5 h后的摩擦系数较低，为0.1。对于有机结合膜，在聚酰胺-亚胺中掺入C和O可能有抑制气化的作用。有机结合MoS_2的氧化层很薄，因此，由于s的气化较少，有机结合MoS_2的摩擦学性能比单晶和溅射MoS_2的摩擦学性能更稳定。在此环境下的摩擦实验结果表明，摩擦系数为0.01。此外，CO气体的引入增强了超低摩擦，但紫外线的照射增加了摩擦。AES腔内的激光解吸光谱在暴露于原子氧时检测到SO_3。研究结果表明，超低摩擦需要硫化氢在MoS_2表面的稳定和对MoS_2晶体表面完整性的介观分析。