Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSI
研究使用成分调制界面层的低电阻接触结构,用于 0.1μm 代 ULSI
基本信息
- 批准号:12555005
- 负责人:
- 金额:$ 8.26万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Scientific Research (B)
- 财政年份:2000
- 资助国家:日本
- 起止时间:2000 至 2002
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
In this project, in order to realize reducing the parasitic resistance such as the contact resistivity at the metal/Si contact and the ultra shallow junction at source/drain regions, we aimed to the establishment of the applicable contact structure for sub-0.1 μm ULSI devices. We have clarified the relationship between the solid phase reactions and the electrical properties at the Ti/SiGe(C)/Si contact structure.(1) The reaction products change from Ti5Ge_6, to C49-TiSi_2, C54-Ti(Si_<1_y>Ge_y)_2 with an increase in annealing temperature. The transformation temperature to C54-Ti(Si_<1-y>Ge_y)_2 in this structure is higher than that in the Ti/SiGe/Si structure. The Ti(SiGe)_2/Ge-rich SiGe/Si structure with the composition-modulated interface of Ge can be formed with annealing the Ti/Ge/Si structure.(2) The Schottky barrier height estimated from the I-V measurement of the Ti/p-SiGe/p-Si structure decreases with the increase in the Ge composition. This structure is expected to be effective to reduce the contact resistivity.(3) In the Ti/SiGeC/Si sample with the low Ge composition, C49-Ti(SiGe)_2 is formed after the 550℃-annealing and the transformation to C54-phase occurs after 750℃ RTA. On the other hand, in the case of the high Ge composition, Ti_6Ge_5 is formed at 550℃, C49-Ti(SiGe)_2 is formed with RTA at 650〜700℃, and the transformation to the C54-phase completes at 750℃. Almost Ge in the SiGe layer can be mixed in the C54-phase by using the RTA method.(4) In the Ti/SiGeC/Si sample with the high Ge composition, while the Ti_6Ge_5 is formed with the conformal layer-structure, -grains of C49- and C54-phase agglomerate and the discontinuous film is formed. The reason why that occurs is the inhomogenization of the Ge composition in the reaction layer with the formation of the Ti_6Ge_5. On the other hand, in the sample with the low Ge composition, the conformal and flat layer of C49- and C54-phase can be formed.
在本项目中,为了实现降低金属/硅触点和源/漏极区超浅结的接触电阻等寄生电阻,我们的目标是建立适用于0.1 μm以下ULSI器件的接触结构。阐明了Ti/SiGe(C)/Si接触结构中固相反应与电学性质的关系。(1)随着退火温度的升高,反应产物由Ti5Ge_6转变为C49-TiSi_2、C54-Ti(Si_<1_y>Ge_y)_2。该结构向C54-Ti(Si_<1-y>Ge_y)_2的转变温度高于Ti/SiGe/Si结构。通过对Ti/Ge/Si结构进行退火处理,可以形成具有Ge组成调制界面的富Ti(SiGe)_2/Ge的SiGe/Si结构。(2) Ti/p-SiGe/p-Si结构的I-V测量估计的肖特基势垒高度随着Ge成分的增加而降低。这种结构有望有效地降低接触电阻率。(3)低Ge成分Ti/SiGeC/Si样品中,550℃退火后形成C49-Ti(SiGe)_2, 750℃RTA后转变为c54相。而在高Ge组分下,Ti_6Ge_5在550℃形成,C49-Ti(SiGe)_2在650 ~ 700℃通过RTA形成,750℃完成向c54相的转变。通过RTA法,SiGe层中的Ge几乎可以混合到c54相中。(4)在高Ge组成的Ti/SiGeC/Si样品中,Ti_6Ge_5以保形层状结构形成,C49-和c54相晶粒聚集,形成不连续薄膜。其原因是反应层中Ge组成随着Ti_6Ge_5的形成而不均匀化。另一方面,在低Ge成分的样品中,可以形成C49-和c54相的共形扁平层。
项目成果
期刊论文数量(40)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Osamu Nakatsuka, et al.: "Dependence of contact resistivity on impurity concentration in Co/Si systems"Appl.Surf.Sci.. 159-160. 149-153 (2000)
Osamu Nakatsuka 等人:“Co/Si 系统中接触电阻率对杂质浓度的依赖性”Appl.Surf.Sci. 159-160。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Akihiro Tobioka et al.: "Study on solid-phase reactions in Ti/p^+-Si_<1-x-y>Ge_xC_y/Si(100) contacts"Materials Science and Engineering. B89. 373-377 (2002)
Akihiro Tobioka 等:“Ti/p^-Si_<1-x-y>Ge_xC_y/Si(100) 接触中固相反应的研究”材料科学与工程。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Masahisa Okada et al.: "Epitaxial growth of heavily B-doped SiGe films and interfacial reaction of Ti/B-doped SiGe bilayer structure using rapid thermal processing"Thin Solid Films. 369. 130-133 (2000)
Masahisa Okada 等人:“使用快速热处理的重硼掺杂 SiGe 薄膜的外延生长和 Ti/B 掺杂 SiGe 双层结构的界面反应”固体薄膜。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
M.Okada: "Epitaxial growth of heavily B-doped SiGe films and interfacial reactions of Ti/B-doped SiGe bilayer structure using rapid thermal processing"Thin Solid Films. 369. 130-133 (2000)
M.Okada:“使用快速热处理的重硼掺杂 SiGe 薄膜的外延生长和 Ti/B 掺杂 SiGe 双层结构的界面反应”固体薄膜。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
Masahisa Okada et al.: "Epitaxial growth of heavily B-doped SiGe films and interfacial reaciton of Ti/B-doped SiGe bilayer structure using rapid thermal processing"Thin Solid Films. 369. 130-133 (2000)
Masahisa Okada 等人:“使用快速热处理的重 B 掺杂 SiGe 薄膜的外延生长和 Ti/B 掺杂 SiGe 双层结构的界面反应”固体薄膜。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
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YASUDA Yukio其他文献
YASUDA Yukio的其他文献
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08455019 - 财政年份:1996
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08505001 - 财政年份:1996
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06555005 - 财政年份:1994
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