Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSI

研究使用成分调制界面层的低电阻接触结构,用于 0.1μm 代 ULSI

基本信息

  • 批准号:
    12555005
  • 负责人:
  • 金额:
    $ 8.26万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2000
  • 资助国家:
    日本
  • 起止时间:
    2000 至 2002
  • 项目状态:
    已结题

项目摘要

In this project, in order to realize reducing the parasitic resistance such as the contact resistivity at the metal/Si contact and the ultra shallow junction at source/drain regions, we aimed to the establishment of the applicable contact structure for sub-0.1 μm ULSI devices. We have clarified the relationship between the solid phase reactions and the electrical properties at the Ti/SiGe(C)/Si contact structure.(1) The reaction products change from Ti5Ge_6, to C49-TiSi_2, C54-Ti(Si_<1_y>Ge_y)_2 with an increase in annealing temperature. The transformation temperature to C54-Ti(Si_<1-y>Ge_y)_2 in this structure is higher than that in the Ti/SiGe/Si structure. The Ti(SiGe)_2/Ge-rich SiGe/Si structure with the composition-modulated interface of Ge can be formed with annealing the Ti/Ge/Si structure.(2) The Schottky barrier height estimated from the I-V measurement of the Ti/p-SiGe/p-Si structure decreases with the increase in the Ge composition. This structure is expected to be effective to reduce the contact resistivity.(3) In the Ti/SiGeC/Si sample with the low Ge composition, C49-Ti(SiGe)_2 is formed after the 550℃-annealing and the transformation to C54-phase occurs after 750℃ RTA. On the other hand, in the case of the high Ge composition, Ti_6Ge_5 is formed at 550℃, C49-Ti(SiGe)_2 is formed with RTA at 650〜700℃, and the transformation to the C54-phase completes at 750℃. Almost Ge in the SiGe layer can be mixed in the C54-phase by using the RTA method.(4) In the Ti/SiGeC/Si sample with the high Ge composition, while the Ti_6Ge_5 is formed with the conformal layer-structure, -grains of C49- and C54-phase agglomerate and the discontinuous film is formed. The reason why that occurs is the inhomogenization of the Ge composition in the reaction layer with the formation of the Ti_6Ge_5. On the other hand, in the sample with the low Ge composition, the conformal and flat layer of C49- and C54-phase can be formed.
在本项目中,为了实现降低金属/硅触点和源/漏极区超浅结的接触电阻等寄生电阻,我们的目标是建立适用于0.1 μm以下ULSI器件的接触结构。阐明了Ti/SiGe(C)/Si接触结构中固相反应与电学性质的关系。(1)随着退火温度的升高,反应产物由Ti5Ge_6转变为C49-TiSi_2、C54-Ti(Si_<1_y>Ge_y)_2。该结构向C54-Ti(Si_<1-y>Ge_y)_2的转变温度高于Ti/SiGe/Si结构。通过对Ti/Ge/Si结构进行退火处理,可以形成具有Ge组成调制界面的富Ti(SiGe)_2/Ge的SiGe/Si结构。(2) Ti/p-SiGe/p-Si结构的I-V测量估计的肖特基势垒高度随着Ge成分的增加而降低。这种结构有望有效地降低接触电阻率。(3)低Ge成分Ti/SiGeC/Si样品中,550℃退火后形成C49-Ti(SiGe)_2, 750℃RTA后转变为c54相。而在高Ge组分下,Ti_6Ge_5在550℃形成,C49-Ti(SiGe)_2在650 ~ 700℃通过RTA形成,750℃完成向c54相的转变。通过RTA法,SiGe层中的Ge几乎可以混合到c54相中。(4)在高Ge组成的Ti/SiGeC/Si样品中,Ti_6Ge_5以保形层状结构形成,C49-和c54相晶粒聚集,形成不连续薄膜。其原因是反应层中Ge组成随着Ti_6Ge_5的形成而不均匀化。另一方面,在低Ge成分的样品中,可以形成C49-和c54相的共形扁平层。

项目成果

期刊论文数量(40)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Osamu Nakatsuka, et al.: "Dependence of contact resistivity on impurity concentration in Co/Si systems"Appl.Surf.Sci.. 159-160. 149-153 (2000)
Osamu Nakatsuka 等人:“Co/Si 系统中接触电阻率对杂质浓度的依赖性”Appl.Surf.Sci. 159-160。
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    0
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Akihiro Tobioka et al.: "Study on solid-phase reactions in Ti/p^+-Si_<1-x-y>Ge_xC_y/Si(100) contacts"Materials Science and Engineering. B89. 373-377 (2002)
Akihiro Tobioka 等:“Ti/p^-Si_<1-x-y>Ge_xC_y/Si(100) 接触中固相反应的研究”材料科学与工程。
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    0
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Masahisa Okada et al.: "Epitaxial growth of heavily B-doped SiGe films and interfacial reaction of Ti/B-doped SiGe bilayer structure using rapid thermal processing"Thin Solid Films. 369. 130-133 (2000)
Masahisa Okada 等人:“使用快速热处理的重硼掺杂 SiGe 薄膜的外延生长和 Ti/B 掺杂 SiGe 双层结构的界面反应”固体薄膜。
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  • 影响因子:
    0
  • 作者:
  • 通讯作者:
M.Okada: "Epitaxial growth of heavily B-doped SiGe films and interfacial reactions of Ti/B-doped SiGe bilayer structure using rapid thermal processing"Thin Solid Films. 369. 130-133 (2000)
M.Okada:“使用快速热处理的重硼掺杂 SiGe 薄膜的外延生长和 Ti/B 掺杂 SiGe 双层结构的界面反应”固体薄膜。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
  • 作者:
  • 通讯作者:
Masahisa Okada et al.: "Epitaxial growth of heavily B-doped SiGe films and interfacial reaciton of Ti/B-doped SiGe bilayer structure using rapid thermal processing"Thin Solid Films. 369. 130-133 (2000)
Masahisa Okada 等人:“使用快速热处理的重 B 掺杂 SiGe 薄膜的外延生长和 Ti/B 掺杂 SiGe 双层结构的界面反应”固体薄膜。
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    0
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YASUDA Yukio其他文献

YASUDA Yukio的其他文献

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{{ truncateString('YASUDA Yukio', 18)}}的其他基金

Exploration of radioactive cesium distribution in forest soil using gamma-ray spectral survey
利用伽马射线能谱调查探索森林土壤中放射性铯的分布
  • 批准号:
    26660133
  • 财政年份:
    2014
  • 资助金额:
    $ 8.26万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Development of learner support system for medical students in practical training with simulation
医学生实习模拟学习支持系统的开发
  • 批准号:
    23659273
  • 财政年份:
    2011
  • 资助金额:
    $ 8.26万
  • 项目类别:
    Grant-in-Aid for Challenging Exploratory Research
Studies on Surface Reaction Mechanisms in Atomic Layr CVD by HREELS
HREELS研究原子层CVD表面反应机理
  • 批准号:
    08455019
  • 财政年份:
    1996
  • 资助金额:
    $ 8.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of Low-Resistivity Contact Materials for Future ULSIs
为未来 ULSI 开发低电阻率接触材料
  • 批准号:
    08505001
  • 财政年份:
    1996
  • 资助金额:
    $ 8.26万
  • 项目类别:
    Grant-in-Aid for Scientific Research (A)
STUDY ON INFRA-RED OPTICAL DEVICES BY Si_<1-x>Ge_x HETERO-STRUCTURES
Si_<1-x>Ge_x异质结构红外光学器件的研究
  • 批准号:
    06555005
  • 财政年份:
    1994
  • 资助金额:
    $ 8.26万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
A study on influences of hydrogen on growth mechanisms of thin films by electron energy loss spectroscopy
电子能量损失谱研究氢对薄膜生长机制的影响
  • 批准号:
    06452119
  • 财政年份:
    1994
  • 资助金额:
    $ 8.26万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Studies on Quantum Transport Mechanism of Si Quasi-One-Dimensional Carrier Systems by a Time-of-Flight Method with Pulse Lasers
脉冲激光飞行时间法研究Si准一维载流子系统的量子输运机制
  • 批准号:
    04452090
  • 财政年份:
    1992
  • 资助金额:
    $ 8.26万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Development of time-dependent vibration-excited spectroscopy and study on the growth process of semiconductor thin films.
时变振动激发光谱学的发展和半导体薄膜生长过程的研究。
  • 批准号:
    02402022
  • 财政年份:
    1990
  • 资助金额:
    $ 8.26万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)
Investigation of the Mechanism of Ge/Si heteroepitaxial Growth with Interfacial Reactions
界面反应Ge/Si异质外延生长机理研究
  • 批准号:
    63460055
  • 财政年份:
    1988
  • 资助金额:
    $ 8.26万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Development and Application of Growth Methods of Functional Thin Films.
功能薄膜生长方法的开发与应用。
  • 批准号:
    63302021
  • 财政年份:
    1988
  • 资助金额:
    $ 8.26万
  • 项目类别:
    Grant-in-Aid for Co-operative Research (A)
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