Development and Application of Growth Methods of Functional Thin Films.
功能薄膜生长方法的开发与应用。
基本信息
- 批准号:63302021
- 负责人:
- 金额:$ 7.23万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Co-operative Research (A)
- 财政年份:1988
- 资助国家:日本
- 起止时间:1988 至 1989
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
The purpose of this study is to research new functional thin films and to develop thin film growth methods through a technological and interdisciplinary interchange among the researchers which investigate functional materials and thin film growth methods. In this period of study, various functional thin films and growth methods have been developed in each research field attracted attention now. It can be said that our original purpose has been achieved by the study in closer cooperation with researchers in other fields. A part of concrete results is as follows: (1) Gas source molecular beam epitaxy has been drastically extended in this period, and formation of very thin films of high quality and precise control of film growth has been made possible. (2) By using excited processes, new functional thin films such as diamond and composite films of metal-organic material and thin films which cannot be formed by a conventional method have been formed. In addition, the low temperature growth of high-T_c superconducting thin films has been also successful. (3) The growth control technology at atomic layer level has lead to development of solid state physics at interfaces and surfaces. (4) The study including a possibility as functional thin films, such as an application of diamond films to semiconductors and physical properties of composite films of metal-organic material and insulator semiconductor, has been developed.We have been able to grasp the relation between thin film growth methods and functional materials in the form of a matrix. This fact leads to the effective application of growth methods and makes clear the field remaining as an unknown domain of science. Therefore, we can expect the development of material and growth methods in this domain, because the unknown domain is considered to have a potential possibility.
本研究的目的是通过研究功能材料和薄膜生长方法的研究人员之间的技术和跨学科交流,研究新的功能薄膜和开发薄膜生长方法。在这段时间里,各种功能薄膜和生长方法在每个研究领域都得到了开发和应用,引起了人们的关注。可以说,我们的初衷是通过与其他领域的研究人员更紧密地合作来实现的。部分具体结果如下:(1)气源分子束外延技术在这一时期得到了极大的发展,使高质量薄膜的形成和薄膜生长的精确控制成为可能。(2)利用激发过程,形成了新的功能薄膜,如金刚石薄膜、金属-有机材料复合膜以及传统方法无法形成的薄膜。此外,高温超导薄膜的低温生长也取得了成功。(3)原子层水平的生长控制技术促进了界面和表面固体物理的发展。(4)开展了金刚石薄膜在半导体中的应用以及金属有机材料和绝缘半导体复合薄膜的物理性质等作为功能薄膜的可能性的研究,掌握了薄膜生长方法与以基质形式存在的功能材料之间的关系。这一事实导致了生长方法的有效应用,并表明该领域仍然是一个未知的科学领域。因此,我们可以期待材料和生长方法在这一领域的发展,因为未知领域被认为具有潜在的可能性。
项目成果
期刊论文数量(90)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Tanaka,K.Deguchi,S.Miyazaki,and A.Hirose: "Selective Growth of Polycrystalline Silicon by Laserーnduced Cryogenic CVD" Jpn.J.Appl.Phys. 27. L2149-L2151 (1988)
T.Tanaka、K.Deguchi、S.Miyazaki 和 A.Hirose:“通过激光诱导低温 CVD 选择性生长多晶硅”Jpn.J.Appl.Phys 27. L2149-L2151 (1988)
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I.Akasaki, H.Amano, Y.Koide, K.Hiramatsu, and N.Sawaki: "EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL PROPERTIES OF GaN AND Ga_<1-x>Al_xN (0<x <less than or equal>0.4)" J.Crystal Growth 98 PP.209-219 (1989).
I.Akasaki、H.Amano、Y.Koide、K.Hiramatsu 和 N.Sawaki:“AlN 缓冲层对 GaN 和 Ga_<1-x>Al_xN (0<x
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T.Ohmi, H.Iwabuchi, T.Shibata, and T.Ichikawa: "Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process" Appl.Phys.Lett. 54 PP. 253-255 (1989).
T.Ohmi、H.Iwabuchi、T.Shibata 和 T.Ichikawa:“低动能粒子工艺形成的外延硅薄膜的电特性”Appl.Phys.Lett。
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- 影响因子:0
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T.Ohmi,T.Ichikawa,T.Shibata and H.Iwabuchi: "Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process" Appl.Phys.Lett.54. 523-525 (1989)
T.Ohmi、T.Ichikawa、T.Shibata 和 H.Iwabuchi:“低动能粒子工艺形成的外延硅薄膜的晶体结构分析”Appl.Phys.Lett.54。
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T.Saito,T.Ohmi,T.Shibata,M.Otsuki,and T.Nitta: "Thermal Stability Studies on Copper Thin Films Formed by a Low-Kinetic-Energy Particle Process" 21st Conf.Solid State Devices and Materials. 25-28 (1989)
T.Saito、T.Ohmi、T.Shibata、M.Otsuki 和 T.Nitta:“低动能粒子工艺形成的铜薄膜的热稳定性研究”第 21 届固态器件和材料会议。
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YASUDA Yukio其他文献
YASUDA Yukio的其他文献
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Exploration of radioactive cesium distribution in forest soil using gamma-ray spectral survey
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26660133 - 财政年份:2014
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Development of learner support system for medical students in practical training with simulation
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23659273 - 财政年份:2011
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Grant-in-Aid for Challenging Exploratory Research
Study of low resistance contact structure using composition-modulated interface layer for 0.1-μm generation ULSI
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12555005 - 财政年份:2000
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Grant-in-Aid for Scientific Research (B)
Studies on Surface Reaction Mechanisms in Atomic Layr CVD by HREELS
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- 批准号:
08455019 - 财政年份:1996
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Grant-in-Aid for Scientific Research (B)
Development of Low-Resistivity Contact Materials for Future ULSIs
为未来 ULSI 开发低电阻率接触材料
- 批准号:
08505001 - 财政年份:1996
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$ 7.23万 - 项目类别:
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STUDY ON INFRA-RED OPTICAL DEVICES BY Si_<1-x>Ge_x HETERO-STRUCTURES
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- 批准号:
06555005 - 财政年份:1994
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A study on influences of hydrogen on growth mechanisms of thin films by electron energy loss spectroscopy
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06452119 - 财政年份:1994
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Grant-in-Aid for General Scientific Research (B)
Studies on Quantum Transport Mechanism of Si Quasi-One-Dimensional Carrier Systems by a Time-of-Flight Method with Pulse Lasers
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04452090 - 财政年份:1992
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Development of time-dependent vibration-excited spectroscopy and study on the growth process of semiconductor thin films.
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02402022 - 财政年份:1990
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Investigation of the Mechanism of Ge/Si heteroepitaxial Growth with Interfacial Reactions
界面反应Ge/Si异质外延生长机理研究
- 批准号:
63460055 - 财政年份:1988
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相似海外基金
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