Development and Application of Growth Methods of Functional Thin Films.
Development and Application of Growth Methods of Functional Thin Films.
批准号:
63302021
负责人:
YASUDA Yukio
金额:
$7.23万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Co-operative Research (A)
财政年份:
1988
资助国家:
日本
项目状态:
已结题
起止时间:
1988 至 1989
中文摘要
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英文摘要
The purpose of this study is to research new functional thin films and to develop thin film growth methods through a technological and interdisciplinary interchange among the researchers which investigate functional materials and thin film growth methods. In this period of study, various functional thin films and growth methods have been developed in each research field attracted attention now. It can be said that our original purpose has been achieved by the study in closer cooperation with researchers in other fields. A part of concrete results is as follows: (1) Gas source molecular beam epitaxy has been drastically extended in this period, and formation of very thin films of high quality and precise control of film growth has been made possible. (2) By using excited processes, new functional thin films such as diamond and composite films of metal-organic material and thin films which cannot be formed by a conventional method have been formed. In addition, the low temperature growth of high-T_c superconducting thin films has been also successful. (3) The growth control technology at atomic layer level has lead to development of solid state physics at interfaces and surfaces. (4) The study including a possibility as functional thin films, such as an application of diamond films to semiconductors and physical properties of composite films of metal-organic material and insulator semiconductor, has been developed.We have been able to grasp the relation between thin film growth methods and functional materials in the form of a matrix. This fact leads to the effective application of growth methods and makes clear the field remaining as an unknown domain of science. Therefore, we can expect the development of material and growth methods in this domain, because the unknown domain is considered to have a potential possibility.
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T.Ohmi, H.Iwabuchi, T.Shibata, and T.Ichikawa: "Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process" Appl.Phys.Lett. 54 PP. 253-255 (1989).
T.Ohmi、H.Iwabuchi、T.Shibata 和 T.Ichikawa:“低动能粒子工艺形成的外延硅薄膜的电特性”Appl.Phys.Lett。
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通讯作者:
T.Ohmi,T.Ichikawa,T.Shibata and H.Iwabuchi: "Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process" Appl.Phys.Lett.54. 523-525 (1989)
T.Ohmi、T.Ichikawa、T.Shibata 和 H.Iwabuchi:“低动能粒子工艺形成的外延硅薄膜的晶体结构分析”Appl.Phys.Lett.54。
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T.Saito,T.Ohmi,T.Shibata,M.Otsuki,and T.Nitta: "Thermal Stability Studies on Copper Thin Films Formed by a Low-Kinetic-Energy Particle Process" 21st Conf.Solid State Devices and Materials. 25-28 (1989)
T.Saito、T.Ohmi、T.Shibata、M.Otsuki 和 T.Nitta:“低动能粒子工艺形成的铜薄膜的热稳定性研究”第 21 届固态器件和材料会议。
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S.Baba,N.Kurosaki,and A.Kinbara: "ISLAND STRUCTURE AND FRICTIONAL PROPERTIES OF SPUTTERED LEAD THIN FILMS" Sino-Japanese Symposium on Dry Processing for Functional Surface Modification. 74-79
S.Baba,N.Kurosaki,A.Kinbara:“溅射铅薄膜的岛结构和摩擦特性”中日功能性表面改性干法研讨会。
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T.Kaneko,H.Asahi,Y.Okuno,T.W.Kang,and S.Gonda: "Observations on RHEED intensity oscillations during the growth of GaSb and InAs by MOMBE" Second Intl.Conf.on Chemical Beam Epitaxy and Related Growth Techniques(Including MOMBE,GSMBE and LP-MOVPE)MP2 Housto
T.Kaneko、H.Asahi、Y.Okuno、T.W.Kang 和 S.Gonda:“MOMBE 对 GaSb 和 InAs 生长过程中 RHEED 强度振荡的观察”第二届化学束外延及相关生长技术国际会议(
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共 81 条
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Development of Low-Resistivity Contact Materials for Future ULSIs
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A study on influences of hydrogen on growth mechanisms of thin films by electron energy loss spectroscopy
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Studies on Quantum Transport Mechanism of Si Quasi-One-Dimensional Carrier Systems by a Time-of-Flight Method with Pulse Lasers
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Investigation of the Mechanism of Ge/Si heteroepitaxial Growth with Interfacial Reactions
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依托单位:
海外基金