A study on influences of hydrogen on growth mechanisms of thin films by electron energy loss spectroscopy

电子能量损失谱研究氢对薄膜生长机制的影响

• 批准号: 06452119
• 负责人: YASUDA Yukio
• 金额: $ 4.8万
• 依托单位: NAGOYA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452119/
• 关键词: high-resolution electron energy loss spectroscopy; hydrogen; Ge; Si epitaxy; surface migration; surface segregation; 初期酸化; 水素終端シリコン表面; 未結合手; ダイハイドライド構造; 表面反応過程

We have investigated growth processes of thin films, such as epitaxy and oxidation, by high-resolution electron energy loss spectroscopy and reflection high-energy electron diffraction. Especially, hydrogen has been focused on our attention because it plays an important role of the growth processes. Therefore, we have studied influences of hydrogen on Ge/Si epitaxial growth using Si_2H_6 and obtained the main results as follows :1) In the case of Si growth on Si(100) surfaces at temperatures below 550ﾟC、the activation energy of growth rate is in agreement with that of desorption of hydrogen from Si(100) surfaces. This result indicates that the Si growth is limited by the desorption of hydrogen. It has been found that excess hydrogen atoms added separately increase the hydrogen coverage on the Si surface and lower the growth rate, which suggests the possibility of a control of film growth using hydrogen. Moreover, it has been clarified that the adsorbed hydrogen atoms hinder the surface migration of precursors such as Si atoms and Si hydride species.2) In the case of Si growth on Ge2.5ML/Si(100) substrates, the surface segregation of Ge atoms is observed. From the evaluation of the decay length for Ge segregation, excess hydrogen is effective for hindering the segregation. However, the excess hydrogen atoms accelerate the islanding growth. These facts indicate that hydrogen atoms seriously influence the mechanism of Si growth.

我们利用高分辨电子能量损失谱和反射高能电子衍射研究了薄膜的生长过程，如外延和氧化。尤其是氢，因为它在生长过程中起着重要的作用而受到人们的关注。因此，我们研究了氢对Si_2 H_6外延生长Ge/Si的影响，得到的主要结果如下：（1）在Si（100）面上生长时，生长速率的活化能与氢从Si（100）面脱附的活化能一致。这一结果表明，硅的生长受到氢的脱附的限制。已经发现，单独添加的过量氢原子增加了Si表面上的氢覆盖率并降低了生长速率，这表明使用氢控制膜生长的可能性。2）在Ge 2. 5 ML/Si（100）衬底上生长Si时，观察到Ge原子的表面偏聚现象。从Ge偏析的衰减长度的评估，过量的氢是有效的，阻碍偏析。然而，过量的氢原子加速了岛状生长。这些事实表明，氢原子严重影响硅的生长机制。

项目成果

H.Ikeda et al.: "Influences of hydrogen on initial oxidation processes of H-terminated Si (100) surfaces" Appl.Surf.Aci.(印刷中). (1996)

H.Ikeda 等人：“氢对 H 端接 Si (100) 表面的初始氧化过程的影响”Appl.Surf.Aci.（出版中）。

H.Ikeda et al.: "Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces." Appl.Surf.Sci.(in press). (1996)

H.Ikeda 等人：“氢对 H 封端 Si(100) 表面初始氧化过程的影响。”

H.Ikeda et al: "Influences of hydrogen on initial oxidation processes of H-Terminated Si (100) surfaces" Appl.Surf.Sci.(印刷中). (1996)

H.Ikeda 等人：“氢对 H 端硅 (100) 表面初始氧化过程的影响”Appl.Surf.Sci.（出版中）。

Shigeaki Zaima et al.: "Oxidation of H-terminated Si(100)surfaces studied by high-resolution electron energy loss spectroscopy" J.Appl.Phys.(1995)

Shigeaki Zaima 等人：“通过高分辨率电子能量损失光谱研究 H 封端 Si(100) 表面的氧化”J.Appl.Phys.(1995)