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Development of time-dependent vibration-excited spectroscopy and study on the growth process of semiconductor thin films.

时变振动激发光谱学的发展和半导体薄膜生长过程的研究。

基本信息

批准号：
02402022
负责人：
YASUDA Yukio
金额：
$ 14.34万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (A)
财政年份：
1990
资助国家：
日本
起止时间：
1990 至 1991
项目状态：
已结题

项目摘要

We have developed a time dependent measurement method of vibration-excited spectroscopy for elucidating an in-situ dynamical observation of surface reaction at the gas-solid interface and studied the hydrogen adsorption process on Si(100) surfaces. Main results obtained in this study are as follows:1. It has been made a vibration-excited spectroscopic apparatus to be able to measure time-series signals. This system has an energy resolution of 7 meV, a signal stability of better than 1.6% and a maximum elastic peak count rate of 1-2x10^5 cps. It can be performed by this system to observe the vibration of substrate surface atoms and adsorbed atoms in high sensitivity and to apply to measurements of the time dependent signals.2. It has been measured a vibrational mode of Si(100)-2x1 clean surfaces. We can observe an energy loss peak of 100 meV, which is concluded to result from a dimer structure of Si(100)-2x1 with a displacement component in the surface normal direction, an A_1 mode.3. I … More n the atomic and molecular hydrogen adsorption on Si(100)-2x1, Si-H monohydride bonds are formed in the initial stage of adsorption and the vibration signals of Si-2H dihydride bonds increase with increasing exposure. After annealing of a hydrogen saturated surface at 420ﾟC, Si-2H bonds change to Si-H bonds.4. It can be found that the clean surface of Si(100)-2x1 produced by high temperature annealing in an ultra high vacuum is inactive for oxidation at room temperature. The adsorption site of oxygen atoms in the initial stage of oxidation is a bridge bond of the dimer Si atoms, and the oxidation proceeds with the adsorption of oxygen atoms at the site between the first and second Si layers.5. It has been successful to perform the time-dependent measurements of an atomic hydrogen adsorption process on Si(100)-2x1. Peak intensities of vibration signals of the clean surface with 100 meV and the Si-H bonds with 79 meV are found to change exponentially with the exposure time. The decay factor and the hydrogen adsorption rate factor in each signal are 1.4x10^<-4> and 3.6x10^<-4> /sec, respectively. The surface diffusion coefficient of hydrogen atoms obtained these values is about 10^<-20> cm^2/sec, which is much smaller than that for metal surfaces. Less

我们发展了一种含时的振动激发光谱测量方法，用于现场动态观察气固界面的表面反应，并研究了氢在Si（100）表面的吸附过程。本研究取得的主要结果如下：1。它已被制成一个振动激发光谱仪，能够测量时间序列信号。该系统的能量分辨率为7 meV，信号稳定度优于1.6%，最大弹性峰计数率为1- 2 × 10^5 cps。该系统可以高灵敏度地观测衬底表面原子和吸附原子的振动，并可应用于时间相关信号的测量.测量了Si（100）-2x1清洁表面的振动模。我们可以观察到100 meV的能量损失峰，这是由Si（100）-2x1的二聚体结构引起的，其位移分量在表面法线方向，即A_1模.我 ...更多信息氢原子和分子在Si（100）-2x1上的吸附，在吸附初期形成Si-H单氢键，Si-2 H二氢键的振动信号随曝光量的增加而增强。氢饱和表面在420 ℃退火后，Si-2 H键转变为Si-H键.可以发现，通过在超高真空中高温退火产生的Si（100）-2x1的清洁表面在室温下对氧化是无活性的。在氧化的初始阶段中氧原子的吸附位置是二聚体Si原子的桥键，并且随着氧原子在第一和第二Si层之间的位置处的吸附而进行氧化。成功地测量了氢原子在Si（100）-2x1上的吸附过程。发现100 meV的清洁表面和79 meV的Si-H键的振动信号的峰值强度随曝光时间呈指数变化。每个信号中的衰减因子和氢吸附速率因子分别为1.4x10^/sec<-4>和3.6x10^<-4>/sec。得到的氢原子的表面扩散系数约为10^<-20>cm ^2/sec，比金属表面小得多。少