QUANTITATIVE ANALYSIS OF NITROGEN PROFILES IN ULTRATHIN OXYNITRIDE GATE DIELECTRIC FILMS

超薄氮氧化物栅极介电膜中氮分布的定量分析

• 批准号: 12555090
• 负责人: KIMURA Kenji
• 金额: $ 8.19万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555090/
• 关键词: gate oxide film; Ratherford backscattering; SIMS; high-resolution; matrix effect; nitrogen profile; ゲート酸窒化膜; AES

1. Nitrogen depth profiles in ultrathin silicon oxynitride films (〜 2.6 nm) are measured by SIMS. The results are compared with the profiles measured by high-resolution RBS (HRBS) to see if SIMS can be accurate in the topmost 1 - 2 nm region. Using a, constant RSF factor for SIMS analysis, agreement between SIMS and HRBS is not satisfactory. SIMS underestimates the nitrogen concentration at larger concentrations probably due to matrix effects. The empirical composition-dependent RSF factor is derived from the observed results. Correcting the SIMS result with the empirical RSF factor, the nitrogen depth profiles agree with the HRBS results reasonably well except for the very surface region (d < 0.3nm).2. Ultrathin silicon oxynitride films are prepared by ozone and thermal oxidation of Si(001) followed by rapid thermal nitridation. The nitrogen depth profiles in these films are mesured by high-resolution Rutherford backscattering spectroscopy. Observed nitrogen profiles are essentially the same having a peak at the SiO_2/Si interface, although the interfaces strain in the ozone oxide is much smaller than that of the thermal oxide. This indicates that the interface strain relaxation due to the nitrogen incorporation is not responsible for the nitrogen accumulation at the interface.

1.用二次离子质谱（西姆斯）测量了厚约2.6nm的氮氧化硅薄膜中氮的深度分布.将结果与高分辨率RBS（HRBS）测量的轮廓进行比较，以查看西姆斯在最高1 - 2 nm区域是否准确。使用一个恒定的RSF因子进行西姆斯分析，西姆斯和HRBS之间的协议是不令人满意的。西姆斯低估了氮浓度在较大的浓度可能是由于基质效应。经验成分依赖的RSF因子来自观察到的结果。用经验RSF因子对西姆斯结果进行修正后，除表面区域（d < 0.3nm）外，氮的深度分布与HRBS结果基本一致.采用臭氧热氧化Si（001），然后快速热氮化的方法制备了超薄氮氧化硅薄膜。这些薄膜中的氮深度分布是通过高分辨率卢瑟福背散射光谱测量的。虽然臭氧氧化物中的界面应变远小于热氧化物中的界面应变，但观察到的氮分布基本相同，在SiO_2/Si界面处有一个峰值。这表明，由于氮掺入的界面应变弛豫是不负责在界面处的氮积累。

项目成果

K. Kimura. K. Nakajima, H. Kobayashi, S. Miwa, K. Satori: "SIMS and high-resoluton RBS, anaysis of ultrathin SiOxNy films"Appl. Surf. Sci.. (in press).

K·木村。

Nobuo Shiraishi: "CMC Publishing Co., Ltd., Tokyo"The Newest Technology for Wood Chemicals. 309 (2000)

Nobuo Shiraishi：“CMC Publishing Co., Ltd.，东京”木材化学品的最新技术。

Yoshiyuki Nishio: "New Functionalisation of Cellulose and Related Polysaccarides by Microscopic Hybridization"SEN'I GAKKAISHI. 57(7). 192-196 (2001)

Yoshiyuki Nishio：“通过显微杂交实现纤维素和相关多糖的新功能化”SENI GAKKAISHI。

Nobuo Shiraishi: "Marcel Dekker, Inc., New York"WOOD AND CELLULOSIC CHEMISTRY. 914 (2001)

Nobuo Shiraishi：“Marcel Dekker, Inc.，纽约”木材和纤维素化学。

Y. Teramoto: "Plasticization of Cellulose Diacetate by Graft Copolymerization of ε-Caprolactone and Lactic Acid"Journal of Applied Polymer Science. (in press).

Y. Teramoto：“通过 ε-己内酯和乳酸的接枝共聚实现二醋酸纤维素的增塑”，《应用聚合物科学》杂志（正在出版）。