Basic research for development of electronics devices with strain-Si

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New goniometers and load lock chambers were developed for the present high-resolution Rutherford backscattering spectroscopy (HRBS) system. By performing the channeling angular scan with the improved HRBS system and comparing the result with a trajectory simulation of channeling ions, the strain in the strain-Si grown on a SiGe layer was measured for both ion-implanted strain-Si samples and strain-Si samples annealed after ion implantation. It was found that the strain was recovered after annealing.Germanium was epitaxially grown on a clean (001) surface of strain-Si and the growth process was observed in situ with HRBS. For comparison a similar measurement was done with normal Si It was hind that the interdiffusion between Ge and strain-Si is enhanced as compared with the normal Si The effect of strain on the initial oxidation process of Si(001) was also studied by in-situ HRBS observation. The saturation oxygen coverage on the strain-Si was hind to be the same as the normal Si at room temperature (RT) as well as at 640℃. More detailed observation at RT revealed that there is no difference at the oxygen exposure of 12 L but oxygen coverage for the strain-Si is larger at 30 L. This result together with the first principles calculation suggests that the effect of the strain on the oxidation depends on the adsorption site for oxygen.