Basic research for development of electronics devices with strain-Si

应变硅电子器件开发基础研究

• 批准号: 17360139
• 负责人: KIMURA Kenji
• 金额: $ 10.33万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2005
• 资助国家: 日本
• 起止时间: 2005 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17360139/
• 关键词: strain-Si; high-resolution RBS; ion implantation; Ge growth; oxidation of Si; ひずみ測定

New goniometers and load lock chambers were developed for the present high-resolution Rutherford backscattering spectroscopy (HRBS) system. By performing the channeling angular scan with the improved HRBS system and comparing the result with a trajectory simulation of channeling ions, the strain in the strain-Si grown on a SiGe layer was measured for both ion-implanted strain-Si samples and strain-Si samples annealed after ion implantation. It was found that the strain was recovered after annealing.Germanium was epitaxially grown on a clean (001) surface of strain-Si and the growth process was observed in situ with HRBS. For comparison a similar measurement was done with normal Si It was hind that the interdiffusion between Ge and strain-Si is enhanced as compared with the normal Si The effect of strain on the initial oxidation process of Si(001) was also studied by in-situ HRBS observation. The saturation oxygen coverage on the strain-Si was hind to be the same as the normal Si at room temperature (RT) as well as at 640℃. More detailed observation at RT revealed that there is no difference at the oxygen exposure of 12 L but oxygen coverage for the strain-Si is larger at 30 L. This result together with the first principles calculation suggests that the effect of the strain on the oxidation depends on the adsorption site for oxygen.

为目前的高分辨率卢瑟福背散射光谱(HRBS)系统开发了新的测角器和加载锁定室。用改进的HRBS系统进行沟道角扫描，并将结果与沟道离子轨迹模拟结果进行比较，测量了离子注入应变硅样品和离子注入后退火应变硅样品在SiGe层上生长应变硅中的应变。用高分辨电子能谱(HRBS)原位观察了Ge在(001)晶面上的生长过程。作为对比，对正常硅也进行了类似的测量，结果表明，与正常硅相比，应变-硅与Ge之间的互扩散增强了，并通过原位HRBS观察研究了应变对Si(001)初始氧化过程的影响。应变硅的饱和氧覆盖率在室温(RT)和640℃时与正常硅相同。在RT下更详细的观察表明，12个L的氧暴露没有差别，但菌株-Si在30L处的氧覆盖率更大。这一结果与第一性原理计算表明，应变对氧化的影响取决于氧的吸附位置。

项目成果

Measurement of the strain in strained-Si/Si_<0.79>Ge_<0.21> eith HRBS/channeling

通过 HRBS/沟道测量应变 Si/Si_<0.79​​>Ge_<0.21> 中的应变

• 发表时间: 2006
• 期刊: Nuclear Instruments and Methods in Physics Research B 249
• 作者: T.Matsushita;W.Sakai;K.Nakajima;M.Suzuki;K.Kimura;A.Agarwal;H.-J.Gossmann;M.Ameen;H.Harima
• 通讯作者: H.Harima

高分解能RBSによる歪Si(001)上のGe成長初期過程の観察

使用高分辨率 RBS 观察应变 Si(001) 上 Ge 生长的初始过程

• 发表时间: 2007
• 作者: 錦織雅弘;中嶋 薫;鈴木基史;木村健二
• 通讯作者: 木村健二

Radiation damage induced by 5 keV Si+ ion implantation in strained-Si/Si0.8Ge0.2

5 keV Si 离子注入应变 Si/Si0.8Ge0.2 引起的辐射损伤

• DOI: 10.1016/j.nimb.2004.12.046
• 发表时间: 2005
• 期刊: Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
• 影响因子: 1.3
• 作者: T. Matsushita;W. Sakai;K. Nakajima;Motofumi Suzuki;K. Kimura;A. Agarwal;H. Gossmann;M. Ameen
• 通讯作者: M. Ameen

Observation of initial growth process of Ge on straine-Si(001) using high-resolution 1285

第1285章 高分辨率观察Ge在应变Si(001)上的初始生长过程

• 发表时间: 2007
• 作者: M.;Nishikoori;K.;Nakajima;M.;Suzuki;K.;Kimura
• 通讯作者: Kimura

Influence of strain on radiation damage studied by high-resolution RBS

高分辨率 RBS 研究应变对辐射损伤的影响

• 发表时间: 2005
• 作者: T. Matsushita;K. Nakajima;M. Suzuki;K. Kimura;A. Agarwal;H.-J. Gossmann;M. Ameen
• 通讯作者: M. Ameen