DEVELOPMENT OF A COMPACT HIGH-RESOLUTION RBS SYSTEM

紧凑型高分辨率 RBS 系统的开发

• 批准号: 09355003
• 负责人: KIMURA Kenji
• 金额: $ 20.74万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (A)
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09355003/
• 关键词: high-resolution; Ratherford backscattering; monolayer resolution; growth of Ge; Si(001); initial oxidation process on Si(001); analysis of light elements; silicon oxynitride; hydrogen analysis; 酸窒化膜; Si(001); 酸化初期過程; 超小型; 組成分析; 結晶性評価; RBS /

We have developed a compact high-resolution RBS system including a small accelerator and a high-resolution magnetic spectrometer. The energy resolution was measured to be 0.33keV for 292keV HeィイD1+ィエD1 ions at an acceptance angle of 0.3msr. Monolayer resolution was demonstrated with this system.Because the acceptance angle is rather wide, a so-called "kinematic broadening" reduces the apparent energy resolution especially for light elements. We designed an electrostatic quadrupole lens (Q-lens) for correction of the kinematic broadening. Using the Q-lens, depth profiles of nitrogen atoms in a ultrathin films of silicon oxynitride could be measured with depth resolution of atomic level. Initial oxidation process of Si(001) surfaces was also investigated with the HRBS system. It was found that the oxidation proceeds in the layer-by-layer mode and that the first atomic layer is not completely oxidized at room temperature. The initial stage of Ge/Si(001) epitaxial growth was also studied by HRBS. The intermixing of Ge and Si was observed at growth temperature of 500℃ even in the sub-monolayer coverage region.It was demonstrated that high-resolution elastic recoil can be performed using the developed HRBS system. A depth resolution of 0.28nm was obtained in a depth profile of hydrogen in silicon crystals.A more compact high-resolution RBS system was developed in collaboration with Kobe Steel Ltd. The dimensions of the full system, including an accelerator, are 3.8m(L)×2.8(W)×2.35m(H). This system, called HRBS-500, is now commercially available.

我们已经开发了一个紧凑的高分辨率RBS系统，包括一个小型加速器和一个高分辨率磁谱仪。在0.3msr的接收角下，对292 keV的He_xD_1 + He_xD_1离子的能量分辨率为0.33keV。由于接收角很宽，特别是对于轻元素，所谓的“运动学展宽”降低了表观能量分辨率。我们设计了一个静电四极透镜（Q-透镜）来校正运动学展宽。利用Q透镜可以测量氮氧化硅薄膜中氮原子的深度分布，其深度分辨率达到原子级。利用HRBS系统研究了Si（001）表面的初始氧化过程。发现氧化以逐层模式进行，并且第一原子层在室温下不完全氧化。用高分辨背散射（HRBS）研究了Ge/Si（001）外延生长的初始阶段。在500℃的生长温度下，即使在亚单层覆盖区，也观察到Ge和Si的混合，证明了利用所研制的HRBS系统可以进行高分辨率的弹性反冲。与科比钢铁公司合作研制了一套小型高分辨率RBS系统，包括加速器在内，整个系统的尺寸为3.8m（长）×2.8（宽）×2.35m（高）。这一系统称为HRBS-500，现已投入商业使用。

项目成果

K.Nakajima,K.Kimura,M.Mannami: "The(III)surface of PbTe observed by high-resolution RBS" Nuclear Instruments and Methods in Physics Research B. 135. 350-354 (1998)

K.Nakajima、K.Kimura、M.Mannami：“通过高分辨率 RBS 观测到的 PbTe(III) 表面”核物理研究仪器和方法 B. 135. 350-354 (1998)

K.Kimura: "Defect generation in layer-by-layer-grown ZnSe films on Te-terminated GaAs(001) surfaces" Phys.Rev.B. 57,3. 1410-1413 (1998)

K.Kimura：“Te 端接的 GaAs(001) 表面上逐层生长的 ZnSe 薄膜中的缺陷产生”Phys.Rev.B。

K.Kimura,K.Nakajima,M.Mannami: "Some applocations of high-resolution RBS and ERD using a magnetic spectrometer" Nuclear Instruments and Methods in Physics Research B. 136/138. 1196-1202 (1998)

K.Kimura、K.Nakajima、M.Mannami：“使用磁谱仪进行高分辨率 RBS 和 ERD 的一些应用”物理研究中的核仪器和方法 B. 136/138。

K.Nakajima: "The (111)surface of PbTe observed by high-resolution RBS" Nucl.Instr.and Methods in Phys.Res.B. (in press). (1998)

K.Nakajima：“通过高分辨率 RBS 观察到的 PbTe (111) 表面”Nucl.Instr.and Phys.Res.B 中的方法。

K.Nakajima: "Direct Observation of Intermixing at Ge/Si(001) interfaces by High-resolution RBS"Phys. Rev. Lett.. 83. 1802-1805 (1999)

K.Nakajima：“通过高分辨率 RBS 直接观察 Ge/Si(001) 界面的混合”Phys。