DEVELOPMENT OF A COMPACT HIGH-RESOLUTION RBS SYSTEM
DEVELOPMENT OF A COMPACT HIGH-RESOLUTION RBS SYSTEM
批准号:
09355003
负责人:
KIMURA Kenji
金额:
$20.74万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
1997
资助国家:
日本
项目状态:
已结题
起止时间:
1997 至 1999
中文摘要
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英文摘要
We have developed a compact high-resolution RBS system including a small accelerator and a high-resolution magnetic spectrometer. The energy resolution was measured to be 0.33keV for 292keV HeィイD1+ィエD1 ions at an acceptance angle of 0.3msr. Monolayer resolution was demonstrated with this system.Because the acceptance angle is rather wide, a so-called "kinematic broadening" reduces the apparent energy resolution especially for light elements. We designed an electrostatic quadrupole lens (Q-lens) for correction of the kinematic broadening. Using the Q-lens, depth profiles of nitrogen atoms in a ultrathin films of silicon oxynitride could be measured with depth resolution of atomic level. Initial oxidation process of Si(001) surfaces was also investigated with the HRBS system. It was found that the oxidation proceeds in the layer-by-layer mode and that the first atomic layer is not completely oxidized at room temperature. The initial stage of Ge/Si(001) epitaxial growth was also studied by HRBS. The intermixing of Ge and Si was observed at growth temperature of 500℃ even in the sub-monolayer coverage region.It was demonstrated that high-resolution elastic recoil can be performed using the developed HRBS system. A depth resolution of 0.28nm was obtained in a depth profile of hydrogen in silicon crystals.A more compact high-resolution RBS system was developed in collaboration with Kobe Steel Ltd. The dimensions of the full system, including an accelerator, are 3.8m(L)×2.8(W)×2.35m(H). This system, called HRBS-500, is now commercially available.
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K.Nakajima,K.Kimura,M.Mannami: "The(III)surface of PbTe observed by high-resolution RBS" Nuclear Instruments and Methods in Physics Research B. 135. 350-354 (1998)
K.Nakajima、K.Kimura、M.Mannami:“通过高分辨率 RBS 观测到的 PbTe(III) 表面”核物理研究仪器和方法 B. 135. 350-354 (1998)
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K.Kimura: "Defect generation in layer-by-layer-grown ZnSe films on Te-terminated GaAs(001) surfaces" Phys.Rev.B. 57,3. 1410-1413 (1998)
K.Kimura:“Te 端接的 GaAs(001) 表面上逐层生长的 ZnSe 薄膜中的缺陷产生”Phys.Rev.B。
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K.Kimura,K.Nakajima,M.Mannami: "Some applocations of high-resolution RBS and ERD using a magnetic spectrometer" Nuclear Instruments and Methods in Physics Research B. 136/138. 1196-1202 (1998)
K.Kimura、K.Nakajima、M.Mannami:“使用磁谱仪进行高分辨率 RBS 和 ERD 的一些应用”物理研究中的核仪器和方法 B. 136/138。
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K.Nakajima: "The (111)surface of PbTe observed by high-resolution RBS" Nucl.Instr.and Methods in Phys.Res.B. (in press). (1998)
K.Nakajima:“通过高分辨率 RBS 观察到的 PbTe (111) 表面”Nucl.Instr.and Phys.Res.B 中的方法。
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K.Nakajima: "Direct Observation of Intermixing at Ge/Si(001) interfaces by High-resolution RBS"Phys. Rev. Lett.. 83. 1802-1805 (1999)
K.Nakajima:“通过高分辨率 RBS 直接观察 Ge/Si(001) 界面的混合”Phys。
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