manufacturing of nano pores for handling of a DNA molecule

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Amorphous silicon nitride (SiN) films (thickness 20 nm) were irradiated with 120 - 5000 keV C60 ions and observed using transmission electron microscopy (TEM). The ion tracks produced by the irradiation were clearly observed by TEM. For semi-quantitative analysis the ion tracks were also observed using high-angle annular dark field scanning transmission electron microscopy. The density of the track was found to be reduced by 30%.The sputtering yield of SiN bombarded with 540 keV C60 ions was measured using high-resolution Rutherford backscattering spectroscopy. The yield is as large as 5400. These results suggest that nano pores may be directly produced in the SiN film by optimizing the irradiation conditions.