STUDY ON P-TYPE SURFACE CONDUCTIVITY OF CVD PLASMA DIAMOND

1.我们改进了现有的高分辨率卢瑟福背散射弹性反冲探测系统。一个静电四极透镜被安装在目标和磁谱仪之间，用于校正所谓的运动学展宽。这种校正是获得高分辨率氢深度剖面的必要条件。静电偏转器也安装在分析磁体和位置敏感检测器之间，以拒绝散射的探针离子。研制了一套多参数数据采集系统，用于从暗噪声中提取信号。利用研制的高分辨率ERD系统，对CVD金刚石膜氢分布的深度分辨率和探测极限进行了研究。结果表明，该方法的深度分辨率为0.2nm，检测限为0.5at.% 2.用高分辨率ERD测量了CVD金刚石膜中氢的深度分布。氢分布在表面处显示出尖锐的峰。峰值有一个小的尾巴朝向更大的深度，表明一些氢原子被合并在地下区域。未掺杂和B掺杂的金刚石膜之间的氢分布没有差异。金刚石表面用酸性溶液除氢后，在800℃下用氢等离子体再氢化。再氢化的金刚石膜显示出几乎相同的配置文件作为生长的薄膜。

1. We have modified existing highresolution Rutherford backscattering system for elastic recoil detection (ERD). An electro-static quadrupole lens was installed between the target and the magnetic spectrometer for correction of so-called kinematic broadening. This correction is essential to get high depth resolution in hydrogen depth profiling. An electrostatic deflector was also installed between the analyzing magnet and a position sensitive detector to reject scattered probe ions. A multi-parameter data acquisition system was developed to select signals from dark noise. Using the developed high-resolution ERD system, the depth resolution and the detection limit for hydrogen profiling in CVD diamond films were examined. It was shown that the depth resolution of 0.2 nm and the detection limit of about 0.5 at.% were achieved.2. The hydrogen depth profiles in CVD diamond films were measured with high-resolution ERD. The hydrogen profile showed a sharp peak at the surface. The peak had a small tail toward larger depth, showing that some hydrogen atoms are incorporated in the subsurface region. There was no difference in the hydrogen profile between the undoped and B-doped diamond films. After surface hydrogen was removed by an acid solution, the diamond was rehydrogenated by a hydrogen plasma at 800℃. The rehydrogenated diamond film shows almost the same profile as the as-grown film.