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Control of material properties with photo-induced charge transfer using negative electron affinity surface

使用负电子亲和力表面通过光诱导电荷转移控制材料特性

基本信息

批准号：
13440101
负责人：
KAMADA Masao
金额：
$ 10.05万
依托单位：
Saga University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2003
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13440101/
关键词：
photo-induced phenomena negative electron affinity core-level spectroscopy Laser and SR Surface photo voltage Time-resolved photoelectron electron spin GaAs

项目摘要

We have been investigating the new way to control the charge transfer from semiconductor surfaces to the adsorbed films, which is based on our recent achievement of the new core-level photoelectron spectroscopy using, synchrotron radiation and laser light and also of the formation for, the negative-electron affinity surfaces. This is closely related the important problems such as transient change in the surface potential, dynamics of the photo-induced charge transfer, spin-polarized electrons, photo-induced phase transitions.The purpose of the present study is to apply the techniques mentioned above for the interface between the semiconductors and intelligent materials and control the material properties and spin,characters. Moreover, the important basic subjects related to the interfacial dynamics such as interfacial potential, non-equilibrium dynamics, photo-induced charge transfer, and production of new properties.(1)In this year, we have summarized the negative electron amity surfaces on GaAs. Also we have conducted the time-resolved measurements of surface photo-voltage effect and constructed the dynamical model for surface photo-voltage effects on GaAs and GaAsP-GaAs superlattices. The results have been published in the journals.(2)Based on the above results, we have developed our studies to the photo-induced phenomena on surfaces nad interfaces. The appreciable change was observed on p-GaAs(100)/Cr system in spite of the expectation for the suppression. Although the large photo-effect is expected on p-GaN, the photon-flux dependence of the surface photovoltage effect is not simple and shows the anomalous behavior. The analyses are under progress.(3)In order to investigate the fast dynamics of the surfaces, we have also been testing the new system consisted of an intense femt-second laser and a rare-gaseous chamber. The new microscopy system is under construction.

我们一直在研究控制电荷从半导体表面转移到吸附膜的新方法，这是基于我们最近取得的新核心级光电子能谱，使用同步辐射和激光，以及负电子亲和表面的形成。这与表面电位的瞬态变化、光致电荷转移动力学、自旋极化电子、光致相变等重要问题密切相关。本研究的目的是将上述技术应用于半导体与智能材料之间的界面，并控制材料的性质和自旋特性。此外，与界面动力学相关的重要基础学科如界面势、非平衡动力学、光诱导电荷转移和新性质的产生。(1)在这一年里，我们总结了GaAs上的负电子亲和面。此外，我们还进行了表面光电压效应的时间分辨测量，并建立了表面光电压效应对GaAs和GaAsP-GaAs超晶格的动力学模型。研究结果已发表在期刊上。(2)在上述结果的基础上，我们对表面和界面上的光致现象进行了进一步的研究。在p-GaAs(100)/Cr体系中观察到明显的变化，尽管预期抑制。虽然期望在p-GaN上产生较大的光效应，但表面光电压效应的光子通量依赖性并不简单，并且表现出异常行为。分析正在进行中。(3)为了研究表面的快速动力学，我们也一直在测试由强飞秒激光器和稀有气体室组成的新系统。新的显微镜系统正在建设中。