A study of electron and spin state of magnetic thin layer grown on negative electron affinity semiconductor

负电子亲和势半导体上生长的磁性薄层的电子和自旋态研究

• 批准号: 18560021
• 负责人: TAKAHASHI Naoshi
• 金额: $ 2.37万
• 依托单位: Kagawa University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2006
• 资助国家: 日本
• 起止时间: 2006 至 2007
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18560021/
• 关键词: surface; interface; semiconductor

We tried to investigate electron and spin state, and changing of Fermi level concerning to surface material (for example iron, nickel) and its thickness of ferro-magnetic layer (and/or multi layer), that are grown on semiconductor surface of negative electron affinity (NEA). At first we modified the pumping power of a MBE vacuum chamber by installing ion-pump, and then modified the sample manipulation system. After achieving a good vacuum condition we grew several types of samples with iron and/or Dy and its compound with gallium-arsenide. During the growth we monitored the surface condition with the reflection high electron energy diffraction (RHEED) and after the growth half of samples were checked the x-ray diffraction (XRD) and the transmission electron microscope (TEM). (A part of these work were published) For the rest of samples, we chose amorphous arsenic cap to keep the condition of the surface even after taking out of the vacuum chamber. To investigate the surface electron state and Fermi level, we employed the photoelectron spectroscopy with several photon energy from synchrotron radiation facility in Tosu (Saga Light Centre). Spectrum analysis from these samples is undergoing. Through this work, we established an easy and reliable method of arsenic capping in the MBE chamber, that were also checked by photoelectron spectroscopy because we could see clear evidence of clean surface after removing the arsenic capping layer by heat decapping.

我们试图研究在负电子亲和势（NEA）半导体表面生长的铁磁层（或多层膜）的表面材料（如铁、镍）及其厚度对电子和自旋态以及费米能级的影响。我们首先通过安装离子泵来改变分子束外延真空室的抽运功率，然后对样品操作系统进行了改造。在获得良好的真空条件后，我们用铁和/或Dy及其与砷化镓的化合物生长了几种类型的样品。在生长过程中，我们用反射式高能电子衍射（RHEED）监测表面状况，并在生长半个样品后用X射线衍射（XRD）和透射电子显微镜（TEM）检查。对于其余样品，我们选择了无定形砷帽，即使在从真空室中取出后也能保持表面的状态。为了研究表面电子态和费米能级，我们使用了来自Tosu（佐贺光中心）同步辐射装置的多光子能量的光电子能谱。这些样本的光谱分析正在进行中。通过这项工作，我们建立了一个简单可靠的方法，砷覆盖在MBE室，这也是由光电子能谱检查，因为我们可以看到清晰的证据，清洁的表面后，去除砷覆盖层的热开盖。

项目成果

Structiire and Magnetic Properties of Gd-doped Gallium Arsenide grown by MBE

MBE 生长的掺 Gd 砷化镓的结构和磁性

• 发表时间: 2007
• 作者: H. Miyagawa;H. Shiraoka;S. Higuchi;K. Fujii;N. Takahashi;ら
• 通讯作者: ら

Gd doped GaAs:a diluted magnetic semiconductor grown by molecular beam epitaxy

Gd掺杂GaAs:分子束外延生长的稀磁半导体

• 发表时间: 2007
• 作者: H. Shiraoka;H. Miyagawa;S. Higuchi;K. Fujii;N. Takahashi;ら
• 通讯作者: ら

Structure and Magnetic Properties of Gel-doped Gallium Arsenide grown by MBE

MBE 生长的凝胶掺杂砷化镓的结构和磁性能

• 发表时间: 2007
• 作者: H. Miyagawa;H. Shiraoka;S. Higuchi;K. Fujii;N. Takahashi
• 通讯作者: N. Takahashi

Structure and Magnetic Properties of Gd-doped Gallium Arsenide grown by MBE

MBE 生长的掺 Gd 砷化镓的结构和磁性能

• 发表时间: 2007
• 期刊: Extended Abstract of the 2007 International Conference on Solid State Device and Materials 68
• 作者: H. Shiraoka;H. Miyagawa;S. Higuchi;K. Fujii;N. Takahashi
• 通讯作者: N. Takahashi

MBE法による希薄磁性半導体GaAs:Gdの作製

MBE法制备稀磁半导体GaAs:Gd

• 发表时间: 2007
• 作者: 樋口 修平、白岡 裕之、谷理 博、宮川 勇人、小柴 俊、高橋 尚志;ら
• 通讯作者: ら