Development of New Electronic Emitters using GaN/AIN Super Lattice Structures with Negative Electron Affinity

在本研究中，我们发现以下结果，以制造具有GaN/AlN超晶格结构的电子发射器。(1)选择性区域生长制作金字塔结构的方法及形成尖锐结构的生长条件为了制作GaN/AlN超晶格金字塔结构，采用低压MOVPE方法制作GaN尖锐金字塔结构。研究发现，通过高压或低温生长，形成{ 1 - 101 }晶面，可以获得尖锐的金字塔结构。(2)利用面控技术制备高质量GaN衬底将上述研究结果应用于面控技术，实现了高质量GaN衬底的制备。采用<-2>小面控制外延横向过生长方法，获得了位错密度（~ 10^6cm ~ 2）较低的高质量GaN衬底。(3)反应离子刻蚀是制作精细结构的有效方法。（4）GaN/AlN超晶格结构的可能性研究在AlN衬底上外延生长GaN以研究GaN/AlN超晶格结构的制备。在AlN衬底上获得了裂纹少、质量高的GaN外延层。这一结果显示了实现GaN/AlN超晶格结构的可能性。

In this study, we found the following results in order to fabricate the electronic emitters with GaN/AIN super lattice structures.(1) Method of fabricating pyramid structures by selective area growth and growth conditions of becoming sharp structuresFabrication of GaN sharp pyramid structures was carried out by low-pressure MOVPE method in order to fabricate the pyramid structures with GaN/AIN super lattice structures. It was found that the sharp pyramid structures were realized by the high pressure or low temperature growth to appear { 1 - 101 } facet.(2) Fabrication of high quality GaN substrate using facet controlled techniqueAppling the above results on facet-controlled technique, the fabrication of high quality GaN substrate was carried out. The high quality GaN substrates with low dislocation density (〜10^6 cm^<-2>) were obtained by using facet controlled epitaxial lateral overgrowth.(3) Fabrication of detailed structures by reactive ion etchingReactive ion etching is effective method to fabricate detailed structures. The control of the depth of dry etching became easy by measuring emission spectra of plasma during dry etching of GaN(4) Possibility of GaN/AIN super lattice structureEpitaxial growth GaN on AIN substrate was carried out to study fabrication of GaN/AIN super lattice structures. High quality GaN epitaxial layer with little crack was obtained on A1N substrate. This result shows the possibility of realizing GaN/AIN super lattice structures.