Development of New Electronic Emitters using GaN/AIN Super Lattice Structures with Negative Electron Affinity

使用具有负电子亲和势的 GaN/AlN 超级晶格结构开发新型电子发射器

• 批准号: 11555094
• 负责人: HIRAMATSU Kazumasa
• 金额: $ 4.35万
• 依托单位: Mie University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11555094/
• 关键词: gallium nitride; pyramid structure; selective area growth; metalorganic vapor phase epitaxy; electronic emitter; epitaxial lateral overgrowth; GaN; AIN super lattice; dry etching; AlN; GaN超格子; 有機金属気相成長法

In this study, we found the following results in order to fabricate the electronic emitters with GaN/AIN super lattice structures.(1) Method of fabricating pyramid structures by selective area growth and growth conditions of becoming sharp structuresFabrication of GaN sharp pyramid structures was carried out by low-pressure MOVPE method in order to fabricate the pyramid structures with GaN/AIN super lattice structures. It was found that the sharp pyramid structures were realized by the high pressure or low temperature growth to appear { 1 - 101 } facet.(2) Fabrication of high quality GaN substrate using facet controlled techniqueAppling the above results on facet-controlled technique, the fabrication of high quality GaN substrate was carried out. The high quality GaN substrates with low dislocation density (〜10^6 cm^<-2>) were obtained by using facet controlled epitaxial lateral overgrowth.(3) Fabrication of detailed structures by reactive ion etchingReactive ion etching is effective method to fabricate detailed structures. The control of the depth of dry etching became easy by measuring emission spectra of plasma during dry etching of GaN(4) Possibility of GaN/AIN super lattice structureEpitaxial growth GaN on AIN substrate was carried out to study fabrication of GaN/AIN super lattice structures. High quality GaN epitaxial layer with little crack was obtained on A1N substrate. This result shows the possibility of realizing GaN/AIN super lattice structures.

在本研究中，我们发现了以下结果，以制备具有GaN/AIN超晶格结构的电子发射体。(1)利用选择性面积生长和变尖结构生长条件制备锥体结构的方法采用低压MOVPE法制备GaN/AIN超晶格结构的锥体结构。发现通过高压或低温生长可实现尖锐的金字塔结构，出现{1 - 101}面。(2)利用面控技术制备高质量GaN衬底将上述结果应用于面控技术，进行了高质量GaN衬底的制备。采用微晶面控制外延横向过度生长的方法获得了低位错密度（~ 10^6 cm^<-2>）的高质量GaN衬底。(3)反应离子刻蚀法制备精细结构反应离子刻蚀法是制备精细结构的有效方法。(4) GaN/AIN超晶格结构的可能性在AIN衬底上进行了GaN外延生长，研究了GaN/AIN超晶格结构的制备。在A1N衬底上获得了高质量、裂纹小的GaN外延层。这一结果显示了实现GaN/AIN超晶格结构的可能性。

项目成果

Hideto Miyake et al.: "Reduction of dislocation density in GaN by facet controlled ELO"Proceedings of International Conference on Nitride Workshop, IPAP Conf. Ser.1. 324-327 (2000)

Hideto Miyake 等人：“通过面控制 ELO 减少 GaN 中的位错密度”国际氮化物研讨会会议记录，IPAP Conf.

Kazumasa Hiramatsu et al.: "Fabrication and characterization of low defect density GaN using facet controlled epitaxial lateral overgrowth (FACELO)"Journal of Cristal Growth. 221. 316-326 (2000)

Kazumasa Hiramatsu 等人：“使用面控制外延横向过度生长 (FACELO) 制造低缺陷密度 GaN 的制造和表征”《晶体生长杂志》。

Harumasa Yoshida et al.: "In situ monitoring of GaN reactive ion etching by optical emission spectroscopy"Japanese Journal of Applied Physics. 40 4A. L313-L315 (2001)

Harumasa Yoshida 等人：“通过光学发射光谱法原位监测 GaN 反应离子蚀刻”日本应用物理学杂志。

Kazumasa Hiramatsu et al.: "Recent progress in selective area growth and epitaxial lateral overgrowth of III-nitrides : effects of reactor pressure in MOVPE growth"Physica Status Solidi. 176. 535-543 (1999)

Kazumasa Hiramatsu 等人：“III 族氮化物选择性区域生长和外延横向过度生长的最新进展：反应器压力对 MOVPE 生长的影响”Physica Status Solidi。

Hideto Miyake et al.: "Fabrication and Optical Characterization of Facet-Controlled ELO (FACELO) GaN by LP-MOVPE"Physica Status Solidi(a). 188 No.2. 725-728 (2001)

Hideto Miyake 等人：“通过 LP-MOVPE 进行刻面控制 ELO (FACELO) GaN 的制造和光学表征”Physica Status Solidi(a)。