Development of New Electronic Emitters using GaN/AIN Super Lattice Structures with Negative Electron Affinity

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In this study, we found the following results in order to fabricate the electronic emitters with GaN/AIN super lattice structures.(1) Method of fabricating pyramid structures by selective area growth and growth conditions of becoming sharp structuresFabrication of GaN sharp pyramid structures was carried out by low-pressure MOVPE method in order to fabricate the pyramid structures with GaN/AIN super lattice structures. It was found that the sharp pyramid structures were realized by the high pressure or low temperature growth to appear { 1 - 101 } facet.(2) Fabrication of high quality GaN substrate using facet controlled techniqueAppling the above results on facet-controlled technique, the fabrication of high quality GaN substrate was carried out. The high quality GaN substrates with low dislocation density (〜10^6 cm^<-2>) were obtained by using facet controlled epitaxial lateral overgrowth.(3) Fabrication of detailed structures by reactive ion etchingReactive ion etching is effective method to fabricate detailed structures. The control of the depth of dry etching became easy by measuring emission spectra of plasma during dry etching of GaN(4) Possibility of GaN/AIN super lattice structureEpitaxial growth GaN on AIN substrate was carried out to study fabrication of GaN/AIN super lattice structures. High quality GaN epitaxial layer with little crack was obtained on A1N substrate. This result shows the possibility of realizing GaN/AIN super lattice structures.