Development of a Microwave-Laser Measurement Technique and Contactless Measurement of Conductivity of Silicon Wafer in an Infinitesimal Area

微波激光测量技术的发展及无限小区域硅片电导率的非接触测量

• 批准号: 13555192
• 负责人: JU Yang
• 金额: $ 7.49万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-13555192/
• 关键词: Microwave; Laser; Silicon Wafer; Conductivity; Electro-optic effect; Quantitative Measurement; Contactless; High Resolution

1.Development of a microwave-laser measurement systemA measurement system for detecting the phase variation of a laser light occurring in an electro-optic crystal was developed. The phase variation is induced by the changed index of refraction when a microwave beam is applied to the electro-optic crystal. The variation of the polarized light of a femtosecond pulse laser generated due to the electro-optic effect was successfully detected; thereby the sampling of a high frequency microwave (millimeter-wave) becomes possible.2. Contactless measurement of conductivity of silicon wafer independent of the thicknessA method for quantitative measurement of electrical conductively of semiconductor wafers in a contactless fashion by using millimeter waves was developed, A high-frequency millimeter wave was used in order to ensure the transmitted millimeter wave attenuated rapidly inside the wafer so that the reflection from the bottom surface of the wafer can be neglected. Thereby it becomes possible only to consider the reflection on the top surface of the wafer and thus the millimeter wave response signal is not affected by the thickness of the wafer. In addition, in the experiment, both the amplitude and phase of the reflection coefficient are measured, and by using these two parameters it is possible to determine the conductivity independent of the permittivity of the semiconductor wafers.3. Measurement of conductivity distribution of silicon wafer with high spatial resolution and sensitivityDistribution of the conductivity of silicon wafer was measured by microwave imaging. An open-ended coaxial line sensor was used to increase the spatial resolution and the sensitivity of the measurement. The relationship of the amplitude of the reflection coefficient and the conductivity of a wafer was found to be linear. The demonstrated method could be used to determine conductivity distribution in the process of wafer manufacturing or during device fabrication.

1.微波-激光测量系统的开发了一种用于检测电光晶体中发生的激光的相位变化的测量系统。当微波束被施加到电光晶体时，折射率的改变引起相位变化。成功地检测了飞秒脉冲激光由于电光效应产生的偏振光的变化，从而使高频微波（毫米波）的采样成为可能.提出了一种利用毫米波非接触式定量测量半导体晶片电导率的方法。该方法采用高频毫米波，使透射的毫米波在晶片内部迅速衰减，从而可以忽略晶片底面的反射。由此，可以仅考虑晶片的顶表面上的反射，并且因此毫米波响应信号不受晶片厚度的影响。此外，在实验中，反射系数的幅度和相位都被测量，并且通过使用这两个参数，可以确定与半导体晶片的介电常数无关的电导率。3.高空间分辨率和高灵敏度的硅片电导率分布测量采用微波成像技术测量了硅片的电导率分布。为了提高测量的空间分辨率和灵敏度，采用了开放式同轴线传感器。发现反射系数的幅值与晶片的电导率的关系是线性的。该方法可用于确定晶片制造过程中或器件制造过程中的电导率分布。

项目成果

M. Saka(Y. Ju, Y. Uchimura, H. Abe): "NDE of Small 3-D Surface Fatigue Cracks in Metals by Microwaves"Review of Quantitative Nondestructive Evaluation. Vol.21. pp.476-483 (2002)

M. Saka（Y. Ju、Y. Uchimura、H. Abe）：“微波对金属中小型 3-D 表面疲劳裂纹的 NDE”定量无损评估综述。

Y.Ju(M.Saka, H.Abe): "Microwave Imaging of Delaminations in IC Packages"Review of Progress in Quantitative Nondestructive Evaluation. Vol. 21(掲載予定). (2002)

Y.Ju（M.Saka，H.Abe）：“IC 封装中分层的微波成像”定量无损评估进展回顾，第 21 卷（待出版）。

広沢 容(巨 陽, 坂 真澄): "マイクロ波コンパクト装置による材料非破壊評価"日本非破壊検査協会平成13年度秋季大会講演概要集. 21-22 (2001)

Yo Hirosawa（Yo Kyo，Masumi Saka）：“使用紧凑型微波设备对材料进行无损评估”日本无损检测协会2001年秋季会议讲座摘要21-22（2001）。

Y.Ju(Y.Hirosawa, M.Saka): "Microwave Measurement of the Conductivity of Conducting Thin Films"Proc. Int. Symp. on Precision Engineering and MEMS. 79-82 (2002)

Y.Ju（Y.Hirosawa，M.Saka）：“导电薄膜电导率的微波测量”Proc。

巨 陽(井上光二郎, 坂 真澄): "マイクロ波によるリシコンウェーハの導電率の非接触計測"日本非破壊検査協会平成14年度春季大会講演概要集. 29-32 (2002)

Yo Kyo（Kojiro Inoue、Masumi Saka）：“使用微波非接触式测量硅晶片的电导率”日本无损检测协会 2002 年春季会议摘要 29-32（2002 年）。