Field Effect Transistor Type Gas Sensor Coated with NaNO_2-based Auxiliary Phase for NO_2 Detection

用于NO_2检测的涂有NaNO_2基辅助相的场效应晶体管型气体传感器

• 批准号: 12650814
• 负责人: SHIMANOE Kengo
• 金额: $ 2.62万
• 依托单位: KYUSHU UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650814/
• 关键词: nitrogen oxides sensor; field effect transistor; auxiliary phase; sodium nitrite; tungsten oxides; FET; lower detection limit; stability of sensor; 電界効果トランジスター; FET; 二酸化炭素ガスセンサ; 大気環境; 低温作動

A filed effect transistor (FET) sensor for NO_2 was fabricated by depositing a NaNO_2-based auxiliary phase together with an Au electrode over the gate area. The resulting device exhibited almost ideal FET characteristics at 130- 180 ℃ in air. In NO_2 containing air, the threshold voltage was found to shift upward in a well controlled manner as the NO_2 concentration increased. At a fixed source-drain voltage (3.0 V), die gate-source voltage (V_<GS>) necessary to keep the drain current at a small constant value (200-300 μA) was found to increase linearly with an increase in the logarithm of NOr concentration. It was found that the modification of the auxiliary phase resulted in considerable changes in NO_2 sensing characteristics, especially in the lower detection limit of NO_2. For example, the use of NaNO_2-WG3 (5:1 in molar ratio) allowed to detect NO_2 down to 10 ppb (130 ℃), while NANO_2 did down to 500 ppb (180 ℃). The FET sensor combined with NaNO_2-WO_3 auxiliary phase was tested for the stability of its sensing signal to dilute NO_2 in the presence of CO_2, NO or water vapor. It was found that CO_2 is totally unharmful, allowing the sensor to detect as low as 10 ppb NO_2. On the other hand, NO was found to be an active gas responded by the sensor, although its sensitivity is one tenth the NO_2 sensitivity so that it would remain unharmful under its concentration exceeds 100 ppb. Finally, water vapor was found to cause the base line of signal output to shift downward significantly. The effect could be reduced drastically with a rise in firing temperature of the gold electrode used.

通过在栅区沉积NaNO 2基辅助相和Au电极，制作了场效应晶体管（FET）NO2传感器。在130 ~ 180 ℃的空气中，器件的FET特性接近理想。在含NO_2的空气中，阈值电压随NO_2浓度的增加而升高，并有很好的控制。在固定的源漏电压（3.0 V）下，<GS>使漏电流保持在一个小的恒定值（200-300 μA）所需的栅源电压（V_）随NOr浓度的对数的增加而线性增加。结果表明，辅助相的改变使NO_2的传感特性发生了很大的变化，特别是NO_2的检测下限。以NaNO_2-WG_3（摩尔比为5：1）为例，在130 ℃时，NO_2的检出限为10 ppb，而在180 ℃时，NANO_2的检出限为500 ppb。在CO_2、NO和水蒸气存在的情况下，测试了NaNO_2-WO_3辅助相的FET传感器对稀NO_2气体的传感信号的稳定性。结果表明，CO_2是完全无害的，允许传感器检测低至10 ppb的NO_2。NO是一种活性气体，其灵敏度只有NO_2灵敏度的十分之一，当浓度超过100 ppb时，对人体无害。最后，发现水蒸气导致信号输出的基线显著下移。随着所用金电极焙烧温度的升高，这种影响会大大降低。

项目成果

K.Shimanoe et al.: "Field Effect Transistor Type Gas Sensor Coated with NaNO_2 for NO_2 detection"The Electrochemical Society Proceeding. (in press). (2001)

K.Shimanoe等人：“用于NO_2检测的涂有NaNO_2的场效应晶体管型气体传感器”电化学会报。

K.Shimanoe: "Field effect transistor type gas sensor coated with NaNO_2 for NO_2 detection"Solid-State-Ionic Device II Ceramic Sensors, Proceedings of the International Symposium, The Electrochemical Society, Inc.. 2000(32). 435-444 (2001)

K.Shimanoe：“用于NO_2检测的涂有NaNO_2的场效应晶体管型气体传感器”固态离子器件II陶瓷传感器，国际研讨会论文集，电化学协会，Inc.2000(32)。

K. Shimanoe, S. Nakata, N. Miura, N. Yamazoe: "Field effect transistor type gas sensor coated with NaNO_2 for NO_2 detection"Solid-State Ionic Devices II Ceramic Sensors, Proc. of the Int. Symp., The Electrochemical Society, Inc.. 200-32. 435-444 (2001)

K. Shimanoe、S. Nakata、N. Miura、N. Yamazoe：“涂有 NaNO_2 的场效应晶体管型气体传感器，用于 NO_2 检测”固态离子器件 II 陶瓷传感器，Proc。

K.Shimanoe: "Field effect transistor type gas sensor coated with NaNO_2 for NO_2 detection"Solid-State-Ionics Device II Ceramic Sensors, Proceedings of the International Symposium, The Electrochemical Society, Inc.. 2000-32. 435-444 (2001)

K.Shimanoe：“用于NO_2检测的涂有NaNO_2的场效应晶体管型气体传感器”固态离子器件II陶瓷传感器，国际研讨会论文集，电化学协会，Inc.2000-32。

S. Nakata, K. Shimanoe, N. Miura, N. Yamazoe: "Field effect transistor type NO_2 sensor combined with NaNO_2 auxiliary phase"Sensors and Actuators B. 77. 512-516 (2001)

S. Nakata、K. Shimanoe、N. Miura、N. Yamazoe：“场效应晶体管型 NO_2 传感器与 NaNO_2 辅助相组合”Sensors and Actuators B.77. 512-516 (2001)