Design of Planar Type CO2 Sensor for Indoor Enviroment Measurement

室内环境测量平面型CO2传感器的设计

基本信息

  • 批准号:
    13555238
  • 负责人:
  • 金额:
    $ 8.77万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
  • 财政年份:
    2001
  • 资助国家:
    日本
  • 起止时间:
    2001 至 2002
  • 项目状态:
    已结题

项目摘要

A compact C0_2 sensor has been in a great demand for monitoring or controlling C0_2 in various environments. Among the various types of C0_2 sensors so far proposed, the potentiometric type combining a solid electrolyte with an auxiliary phase of metal carbonate is particularly attractive from its excellent sensing capability. From a practical point of view, however, the devices still remain prototype in structure. In this study, we tried to design planar type C0_2 sensor using NASICON thick film for the lower fabrication cost and down sizing of sensor devices.(1) NASICON (Na_3Zr_2Si_2PO_<12>) powder was prepared by a sol-gel method and was added with α-terpineol. The resulting paste was screen-printed 30μm thick on the alumina substrate. NASICON formation in thick film was almost complete after calcination at 950 and 1000℃, although film densification was still poor. The resulting Planar device could work fairly well as a C0_2 sensor under dry conditions but was unable to work at all … More under humid condition.(2) It was attempted to improve the density and mechanical strength of NASICON thick film with addition of glass forming components. The EMF of the resulting device exhibited excellent response to C0_2 not only in dry but in humid air, although the slope of the Nernstian correlations tended to be slightly less steep than the theoretical one.(3) Densification of thick film of NASICON was explored for the use in a planar C0_2 sensor. Among the many kinds of dispersants of NASICON powder for screen printing method, ethylene glycol was found to exhibit the best densified NASICON thick film after calcination at 1000℃. The resulting planar device showed good C0_2 sensing properties under humid as well as dry conditions.(4) In order to reduce the disturbance by humidity, applicability of an oxide ionic conductor of BiCuVOx as a counter electrode material was examined. The oxide-incorporated devices exhibited stable C0_2 sensing properties under dry as well as humid conditions. In addition, the dependence of EMF on relative humidity could be reduced considerably with the oxide-incorporated devices. Less
紧凑型CO_2传感器对于在各种环境中监测或控制CO_2具有很大的需求。在迄今提出的各种类型的CO_2传感器中,将固体电解质与金属碳酸盐辅助相结合的电位型由于其优异的传感能力而特别有吸引力。然而,从实用的角度来看,这些装置在结构上仍然是原型。在本研究中,我们尝试使用NASICON厚膜设计平面型CO_2传感器,以降低制造成本和缩小传感器器件的尺寸。(1)采用<12>溶胶-凝胶法制备了NASICON(Na_3Zr_2Si_2PO_3)粉体,并添加了α-松油醇。将所得浆料丝网印刷在氧化铝基底上30μm厚。在950和1000℃下煅烧后,厚膜中NASICON的形成几乎完全,但膜的致密化仍然很差。所得到的Planar器件在干燥条件下可以作为CO_2传感器相当好地工作,但是根本不能工作 ...更多信息 在潮湿的条件下。(2)通过添加玻璃形成组分,试图提高NASICON厚膜的致密度和机械强度。所得器件的电动势不仅在干燥空气中而且在潮湿空气中对CO_2都表现出优异的响应,尽管能斯特相关性的斜率倾向于比理论的斜率稍小。(3)研究了NASICON厚膜的致密化方法,并将其应用于平面CO_2传感器。在NASICON丝网印刷用粉末的多种分散剂中,乙二醇在1000℃煅烧后的NASICON厚膜致密性最好。所得的平面器件在潮湿和干燥条件下显示出良好的CO_2传感特性。(4)为了减少湿度的干扰,研究了BiCuVOx的氧化物离子导体作为对电极材料的适用性。氧化物结合的器件在干燥以及潮湿条件下表现出稳定的CO_2传感特性。此外,电动势对相对湿度的依赖性可以大大减少与氧化物结合的设备。少

项目成果

期刊论文数量(38)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Y.Miyachi: "Planar CO_2 sensor using NASICON-glass composite thick film"Proceedings of the 5^<th> East Asian Conference on Chemical Sensors. 161-163 (2001)
Y.Miyachi:“使用NASICON-玻璃复合厚膜的平面CO_2传感器”第五届东亚化学传感器会议论文集。
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    0
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  • 通讯作者:
Y.Miyachi, T.Kida, G.Sakai, K.Shimanoe, N.Yamazoe: "Planar CO_2 sensor using NASICON-glass composite thick film"Proceeding of The 5^<th> East Asian Conference on Chemical Sensors. 161-163 (2001)
Y.Miyachi、T.Kida、G.Sakai、K.Shimanoe、N.Yamazoe:“使用 NASICON 玻璃复合厚膜的平面 CO_2 传感器”第五届东亚化学传感器会议论文集。
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    0
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Y.Miyachi, K.Shimanoe, G.Sakai, N.Yamazoe: "Planar type CO_2 sensor using NASICON thick film -Film structure and sensing property"Chemical Sensor. 18(suupl.A). 49-51 (2002)
Y.Miyachi、K.Shimanoe、G.Sakai、N.Yamazoe:“使用NASICON厚膜的平面型CO_2传感器-薄膜结构和传感性能”化学传感器。
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    0
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Y. Miyachi, T. Kida, G. Sakai, K. Shimanoe, N. Yamazoe: "Preparation of glass composite-added NASICON thick film for planar type CO_2 sensor"Proceedings of the 3^<rd> Cross Straits Symposium on Materials, Energy and Environmental Engineering. 125-126 (200
Y. Miyachi、T. Kida、G. Sakai、K. Shimanoe、N. Yamazoe:“平面型CO_2传感器用添加玻璃复合材料的NASICON厚膜的制备”第三届海峡两岸材料研讨会论文集,
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    0
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T.Kida: "NASICON thick film-based CO_2 sensor prepared by sol-gel method"Sensors and Actuators B. 80. 28-32 (2001)
T.Kida:《溶胶-凝胶法制备的基于NASICON厚膜的CO_2传感器》Sensors and Actuators B. 80. 28-32 (2001)
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    0
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SHIMANOE Kengo其他文献

MgFe2O4におけるLaの導入効果
MgFe2O4中引入La的效果
  • DOI:
  • 发表时间:
    2016
  • 期刊:
  • 影响因子:
    0
  • 作者:
    DOI Akane;NISHIBORI Maiko;SHIMANOE Kengo;OBATA Kenji;MATSUSHIMA Shigenori;平野達也・土居茜・小畑賢次・西堀麻衣子・島ノ江憲剛・松嶋茂憲
  • 通讯作者:
    平野達也・土居茜・小畑賢次・西堀麻衣子・島ノ江憲剛・松嶋茂憲
Effect of adding an additional element for microstructure of magnesium ferrite
添加添加元素对铁氧体镁显微组织的影响
  • DOI:
  • 发表时间:
    2016
  • 期刊:
  • 影响因子:
    0
  • 作者:
    DOI Akane;NISHIBORI Maiko;SHIMANOE Kengo;OBATA Kenji;MATSUSHIMA Shigenori
  • 通讯作者:
    MATSUSHIMA Shigenori

SHIMANOE Kengo的其他文献

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{{ truncateString('SHIMANOE Kengo', 18)}}的其他基金

New material design toward development of micro sensors for detection of environment-related gases
新材料设计,用于开发用于检测环境相关气体的微型传感器
  • 批准号:
    22350064
  • 财政年份:
    2010
  • 资助金额:
    $ 8.77万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Semiconductor gas sensors based on hetero-cluster particles for VOC detection in ppb level
基于异质团簇粒子的半导体气体传感器,用于 ppb 级 VOC 检测
  • 批准号:
    18350075
  • 财政年份:
    2006
  • 资助金额:
    $ 8.77万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Development of semiconductor gas sensor ultra-sensitive in ppb level
ppb级超灵敏半导体气体传感器的研制
  • 批准号:
    15350084
  • 财政年份:
    2003
  • 资助金额:
    $ 8.77万
  • 项目类别:
    Grant-in-Aid for Scientific Research (B)
Field Effect Transistor Type Gas Sensor Coated with NaNO_2-based Auxiliary Phase for NO_2 Detection
用于NO_2检测的涂有NaNO_2基辅助相的场效应晶体管型气体传感器
  • 批准号:
    12650814
  • 财政年份:
    2000
  • 资助金额:
    $ 8.77万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)

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石墨烯平面型电子源热电子注入直接裂解烃类燃料及其制氢应用
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新型平面型太赫兹发射器件半导体耦合多层腔的基础研究
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平面型GaN基表面发射器件的制造
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使用量子点的半导体多层平面型全光开关
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