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Development of Control Method for Residual Stress in Thin Film by Ultrasonic Substrate Vibration

超声基片振动控制薄膜残余应力方法的研制

基本信息

批准号：
15360052
负责人：
MATSUMURO Akihito
金额：
$ 9.73万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2003
资助国家：
日本
起止时间：
2003 至 2004
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15360052/
关键词：
Thin films Control of residual stress Substrate vibration method Development of system Clarification of mechanism Adhesion Mechanical properties C-N thin film 基板励振結晶性薄膜モデル化

项目摘要

In this study, an excellent and simple method for controlling the residual stress is proposed. Here, substrate vibration that is independent of the deposition condition is used. In this process, only substrates are vibrated by PZT during the deposition. The changes of residual stress are tested on TiN,Ti,Cu,Al,Si and C films. Further more, the relationship between residual stress and the mechanical properties such as wear life hardness and elastic coefficient are clearly shown. The mechanism for change of residual stresses was also investigated by the observations of microstructures in films.1)The residual stresses of the crystalline films were changed upon the substrate vibration that was controlled by the bias voltage2)Changing residual stress was independent on film thickness and crystal stricture of the substrate3)The hardness values decreased when the residual stress was changed from compressive to tensile for both Ti and TiN films.4)The wear life was improved when the residual stress was decreased for both Ti and TiN films.5)The grain size decreased and the gap between adjacent crystals at the point of coalescence increased with an increase of vibration amplitude. This is because the decrease in grain size stimulates the development of tensile stress caused by crystallite coalescence while an increasing gap in the columnar structure causes contraction in the film enhancing tensile stress.6)This method was applied to CN films with TiN interlayer. The residual stress of CN/TiN film was decreased and the CN films showed strong adhesive strength.

本文提出了一种控制残余应力的简便易行的方法。在这里，衬底振动与沉积条件无关。在此过程中，沉积过程中只有衬底受到PZT的振动。测试了TiN、Ti、Cu、Al、Si和C薄膜的残余应力变化。此外，还明确了残余应力与磨损寿命、硬度和弹性系数等力学性能之间的关系。通过对薄膜微观结构的观察，探讨了残余应力变化的机理。1)在偏置电压控制的衬底振动下，薄膜的残余应力发生变化；2)残余应力的变化与薄膜厚度和衬底的晶体结构无关；3)当残余应力由压缩变为拉伸时，Ti和TiN薄膜的硬度值都有所下降。4)减小Ti膜和TiN膜的残余应力均可提高其磨损寿命。5)随着振动幅值的增加，晶粒尺寸减小，相邻晶体之间的间隙增大。这是因为晶粒尺寸的减小刺激了晶体聚并引起的拉应力的发展，而柱状结构中间隙的增大导致薄膜收缩，从而增强了拉应力。6)将该方法应用于含TiN中间层的CN薄膜。CN膜的残余应力减小，具有较强的粘接强度。