High-Aspect-Ratio Nanofabrication of Carbon Materials Using CNT Probe and TEM in-situ Observations of Their Process

我们开发了一种利用碳纳米管作为扫描隧道显微镜探针来制作高深宽比纳米凹坑的方法。在常压常温下，在低阻单晶硅上制备了纳米级的凹坑。实验结果表明，随着偏置电压的增加，所制得的形状由凹坑变为丘状。此外，我们还尝试制作了高深宽比的纳米级线制作。通过对制备过程中的透射电子显微镜原位观察，对STM法制备纳米材料的过程机理进行了初步探讨。在探头周围观察到样品的场蒸发，没有位错和应变。因此，这种利用STM进行纳米级加工的物理起源被认为是场蒸发机制。

We have developed a fabrication method for a high-aspect-ratio nanometer-scale pit using a carbon nanotube as a scanning tunneling microscope probe. Nanometer-scale pits were fabricated on low-resistivity single crystal silicon in an ambient pressure and room temperature. The results of our experiment show that the shape fabricated was changed from the pit to the mound increasing with the bias voltage. Furthermore, we tried to fabricate the nanometer-scale line fabrications with high-aspect-ratio. The process mechanism of the nanofabrication by STM method was also tried to clarify by TEM in-situ observations during fabrication process. The field evaporation of the specimen around the probe was observed without dislocations and strains. Therefore, the physical origin of this nanometer-scale fabrication using STM was considered to be the field evaporation mechanism.