High-Aspect-Ratio Nanofabrication of Carbon Materials Using CNT Probe and TEM in-situ Observations of Their Process

本文提出了一种利用碳纳米管作为扫描隧道显微镜探针制造高纵横比纳米坑的方法。在常温和常压条件下，在低电阻率单晶硅上制备了纳米级凹坑。实验结果表明，随着偏置电压的增大，所制备的形状由凹坑变为丘形。此外，我们还尝试了高纵横比的纳米尺度线制造。通过TEM原位观察，试图阐明STM纳米加工的工艺机理。观察探针周围试样的场蒸发，无位错和应变。因此，利用STM制造纳米尺度材料的物理根源被认为是场蒸发机制。

We have developed a fabrication method for a high-aspect-ratio nanometer-scale pit using a carbon nanotube as a scanning tunneling microscope probe. Nanometer-scale pits were fabricated on low-resistivity single crystal silicon in an ambient pressure and room temperature. The results of our experiment show that the shape fabricated was changed from the pit to the mound increasing with the bias voltage. Furthermore, we tried to fabricate the nanometer-scale line fabrications with high-aspect-ratio. The process mechanism of the nanofabrication by STM method was also tried to clarify by TEM in-situ observations during fabrication process. The field evaporation of the specimen around the probe was observed without dislocations and strains. Therefore, the physical origin of this nanometer-scale fabrication using STM was considered to be the field evaporation mechanism.