Novel Bonding Processes in Electronics Assembly for High-temperature Use by In-situ Control of Reaction

通过原位反应控制实现高温电子组装中的新型键合工艺

• 批准号: 15560626
• 负责人: HIROSE Akio
• 金额: $ 2.37万
• 依托单位: Osaka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2004
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-15560626/
• 关键词: High melting point micro joining; Electronics assembly; metallo-organic Ag nanoparticle; Low temperature sintering; Interfacial reaction; Intermetallic compound; エレクトロニクス実装部; めっき; ナノ粒子

The following novel joining processes in electronics assembly for high-temperature use that had a bonding temperature below 300℃ and a heat resistance higher than 260℃ were proposed in the present research.1.Raising melting temperature by the reaction between solder and platingThe melting temperature of the solder layer was raised by the formation of an intermetallic compound through the reaction between a Sn-Ag solder and Ni-Co/Au plating during the reflow process at 240℃. The rapid diffusion of Ni and Co through a (Ni, Co)Sn_2 reaction layer could promote formation of the intermetallic compound. As a result the bonding layer having a melting temperature higher than 260℃ could be obtained after the reflow soldering.2.Bonding process using metallo-organic Ag nanoparticlesA novel bonding process using Ag metallo-organic nanoparticles as a new application of nanotechnologies was proposed. The average size of the Ag nanoparticle is approximately 11 nm, and each nanoparticle is covered with an organic shell. Usually, the agglomeration of metallic nanoparticles is unavoidable due to its large surface energy. However, on the account of the organic shell, these Ag nanoparticles exist individually, and once the organic shell has been removed, these Ag nanoparticles turn activated and abruptly agglomerate. We analyzed its thermal characteristics, applied the agglomerating of the nanoparticles to Cu-to-Cu joining, and researched the influence of the bonding condition, such as bonding pressure, temperature or holding time, upon the joint strengths. The metallurgical bonding between Ag and Cu was achieved and a dense bonding layer of sintered Ag was realized. The joint using the nanoparticles had a melting point equivalent to that of Ag and a joint strength of 30-40 MPa, which is strong enough to be applied as an electronics assembly for high-temperature use. In addition, it came to the conclusion that the strengths increased in accord with the aforesaid three parameters.

本研究提出了以下在高温电子装配中连接温度低于300℃，耐热性高于260℃的新型连接工艺。在240℃回流过程中，Sn-Ag焊料与Ni-Co/Au镀层反应形成金属间化合物，提高了焊料层的熔化温度。Ni和Co通过（Ni, Co）Sn_2反应层快速扩散，促进了金属间化合物的形成。结果表明，回流焊后可获得熔点高于260℃的焊层。金属有机银纳米颗粒键合工艺作为纳米技术的新应用，提出了一种新的金属有机银纳米颗粒键合工艺。银纳米颗粒的平均尺寸约为11纳米，每个纳米颗粒都覆盖着一层有机壳。由于金属纳米颗粒表面能大，其团聚现象是不可避免的。然而，由于有机外壳的原因，这些银纳米粒子是单独存在的，一旦有机外壳被移除，这些银纳米粒子就会被激活并突然聚集。分析了其热特性，将纳米颗粒的团聚性应用于cu - cu连接，研究了键合压力、温度、保温时间等条件对接头强度的影响。实现了银与铜的冶金结合，烧结银形成了致密的结合层。使用纳米颗粒的接头具有相当于银的熔点和30-40 MPa的接头强度，足以作为高温使用的电子组件。此外，还得出了强度随上述三个参数的增加而增加的结论。

项目成果

銀ナノ粒子を用いた接合プロセス-接合パラメータの影響-

使用银纳米颗粒的键合工艺 -键合参数的影响 -

• 发表时间: 2004
• 期刊: Proc.14th Sympo.on Microelectronics 14
• 作者: 井出英一;Eiichi Ide;Takashi Yamamoto;Eiichi Ide;Eiichi Ide;Eiichi Ide;井出英一;井出英一;山本孝志;廣瀬明夫;Eiichi Ide;Akio Hirose;井出英一
• 通讯作者: 井出英一

Metal-metal bonding process using Ag metallo-organic nanoparticles

• DOI: 10.1016/j.actamat.2005.01.047
• 发表时间: 2005-05-01
• 期刊: ACTA MATERIALIA
• 影响因子: 9.4
• 作者: Ide, E;Angata, S;Kobayashi, KF
• 通讯作者: Kobayashi, KF

The Novel Bonding Process Using Ag Nanoperticles -Investigation on Bonding of Various Metals-

使用银纳米颗粒的新型键合工艺 -各种金属键合的研究 -

• 发表时间: 2005
• 期刊: Proceedings of 11th Symposium on Microjoining and Assembly Technology in Electronics Vol.10
• 作者: 井出英一;Eiichi Ide;Takashi Yamamoto;Eiichi Ide
• 通讯作者: Eiichi Ide

マイクロ接合高融点化のためのSn-AgはんだとAu/Ni-Coめっきとの反応性評価

高熔点微接头 Sn-Ag 焊料与 Au/Ni-Co 镀层之间的反应性评估

• 发表时间: 2004
• 期刊: エレクトロニクスにおけるマイクロ接合・実装技術シンポジウム論文集 10
• 作者: 井出英一;Eiichi Ide;Takashi Yamamoto;Eiichi Ide;Eiichi Ide;Eiichi Ide;井出英一;井出英一;山本孝志
• 通讯作者: 山本孝志

銀ナノ粒子を用いた接合プロセス-CUとの接合性の検討-

使用银纳米粒子的接合工艺 - 与 CU 的接合性检查 -

• 发表时间: 2004
• 期刊: エレクトロニクスにおけるマイクロ接合・実装技術シンポジウム論文集 10
• 作者: 井出英一;Eiichi Ide;Takashi Yamamoto;Eiichi Ide;Eiichi Ide;Eiichi Ide;井出英一;井出英一
• 通讯作者: 井出英一