Reliability and Test Solutions for Spintronic-based Compute in Memory (RESOLUTION)

内存计算（CIM）是一个新兴的概念，它基于传统上分离的内存元件和组合电路的紧密集成，允许最大限度地减少在数字架构中移动数据所需的时间和能量。在当前的数字冯诺依曼架构中，数据在存储器和计算单元之间来回传输，从而使它们更慢且耗电。内存计算架构的最有前途的解决方案是基于使用新兴技术，如电阻或磁阻设备，能够充当存储和信息处理单元。尽管使用新兴设备构建的基于存储器计算的架构具有很好的前景，但与设备本身及其双重用途（存储和计算单元）相关的许多问题仍有待解决。制造缺陷的建模和表征、可变性和可靠性问题、故障分析和建模仍然缺乏成熟度，这是新颖的制造工艺和各种设计方案的结果。这些问题解释了现有的测试解决方案的局限性，新兴的存储器阵列和缺乏测试策略的内存计算结构，从而激励我们的研究重点在这个方向上。本项目旨在提供基于自旋电子技术的CIM电路和体系结构的高质量测试和可靠性技术。为了实现这一目标，该项目将侧重于故障模型的开发、可靠性的改进、表征和测试方法，以提高基于自旋电子学的计算应用的可靠性。自旋转移扭矩技术的制造准备就绪以及我们获得精确的设备和故障模型使得这项研究及时，相关和关键。

Computing In Memory (CIM) is an emerging concept based on the tight integration of traditionally separated memory elements and combinational circuits, allowing minimizing time and energy needed to move data across digital architectures. In the current digital von Neumann architectures, data are transferred back and forth between the memory and the computing unit, thus making them slower and power hungry. The most promising solutions for in-memory computing architectures are based on the use of emerging technologies, such as resistive or magneto-resistive devices, that are able to act as both storage and information processing units. Despite the promising nature of the in-memory computing based architectures built with emerging devices, many issues related to the devices themselves and to their double use (storage and computing unit) have still to be solved. Modeling and characterization of fabrication defects, variability and reliability issues, fault analysis and modeling are still lacking maturity, as consequence of novel fabrication processes and variety of design proposals. These issues explain the limitations of the existing test solutions for emerging memory arrays and the lack of test strategies for in-memory computing structures thus motivating our research focus in this direction. This project aims at providing techniques for high quality test and reliability of CIM circuits and architectures based on spintronic technologies. In order to achieve this goal, the project will focus on the development of fault models, reliability improvement, characterization and test methods targeting at enhancing the dependability of the spintronic-based computing applications. The fabrication-readiness of spin transfer torque technology and our access to accurate device and failure models makes this proposed research timely, relevant and crucial.