MBE-Sputtering-system for antiferromagnetic spintronic materials

用于反铁磁自旋电子材料的 MBE 溅射系统

• 批准号: 504979810
• 金额: --
• 依托单位: Universität Regensburg
• 依托单位国家: 德国
• 项目类别: Major Research Instrumentation
• 财政年份: 2022
• 资助国家: 德国
• 起止时间: 2021-12-31 至 2022-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/504979810?language=en
• 关键词: MBE; Sputtering; system; antiferromagnetic; spintronic

Many spintronic effects, such as gaint and tunnel magnetoresistance (GMR, TMR) used in novel magnetic devices such as magnetic random access memories (RAMs) or magnetic hard disks, have been discovered in thin film systems precisely designed to have well-defined sharp interfaces and high crystalline quality using advanced film deposition techniques. The realization of such epitaxial thin films from complex material systems has often led to breathtaking discoveries of spintronic effects that allow very fast operation with only low power consumption. As a result, preparation techniques involving state-of-the-art deposition of thin films from a variety of material systems, including (semi)metals, oxide compounds, semiconductors, and superconductors, have become the focus of the spintronics research. In recent years, there has been a breakthrough in spintronics research that has revealed the possibility of using antiferromagnets (AFs) instead of ferromagnets to enable far more powerful spintronic functions. In previous magnetic devices, AFs were used only as auxiliary components because the intrinsic properties of AFs, such as negligible magnetic magnetization, do not allow manipulation of the antiferromagnetic order with moderate magnetic fields. However, it has been shown that the intrinsic symmetry properties of AFs allow extremely fast manipulation of the magnetic order and can lead to novel spintronic effects. In particular, the combined symmetries of crystal and magnetic lattices play an essential role in enabling phenomena such as spin-polarized bands in AFs without net-magnetization, the anomalous and spin Hall effects, and also G(T)MR effects. Recently, ultrafast electrical switching of antiferromagnetic order and detection of apparently identical inverted antiferromagnetic states have been demonstrated in epitaxial thin films with specific crystal and magnetic lattice symmetries. The realization of epitaxial thin films is therefore an essential element in the research of novel spin phenomena in AFs. To realize epitaxial thin films of AFs, we apply for a cluster consisting of multitarget sputtering and molecular beam epitaxy (MBE) systems. In order to cover a wide range of material systems, we aim to realize a growth facility comprising a UHV sputtering system with 8 targets, a chamber for oxides and an MBE system equipped with multiple effusion cells and an e-beam evaporator connected by a common transfer tube that allows seamless sample exchange between the different chambers within ultra-high vacuum conditions.

在使用先进的薄膜沉积技术精确设计成具有明确定义的尖锐界面和高结晶质量的薄膜系统中，已经发现了许多自旋电子效应，例如用于诸如磁随机存取存储器(RAM)或磁硬盘的新型磁设备中的巨型和隧道磁阻(GMR，TMR)。从复杂的材料系统中实现这种外延薄膜通常会导致对自旋电子效应的令人惊叹的发现，这种自旋电子效应允许以非常低的功耗实现非常快的操作。因此，从包括(半)金属、氧化物化合物、半导体和超导体在内的各种材料体系中沉积薄膜的制备技术已经成为自旋电子学研究的重点。近年来，自旋电子学的研究取得了突破性进展，揭示了使用反铁磁体(AFS)代替铁磁体来实现更强大的自旋电子学功能的可能性。在以前的磁性器件中，AFS仅被用作辅助部件，因为AFS的固有性质，如可忽略的磁化强度，不允许在中等磁场下操纵反铁磁秩序。然而，已有研究表明，AFS的固有对称性允许极快地操纵磁序，并可能导致新的自旋电子效应。特别是，晶格和磁晶格的组合对称性对于AFS中没有净磁化的自旋极化带、反常和自旋霍尔效应以及G(T)MR效应等现象起着至关重要的作用。最近，在具有特定晶体和磁晶格对称性的外延薄膜中，已经证明了反铁磁序的超快电学转换和明显相同的反铁磁态的检测。因此，外延薄膜的实现是研究原子力显微镜中新的自旋现象的关键。为了实现AFS的外延薄膜，我们应用了由多靶溅射和分子束外延(MBE)系统组成的团簇。为了覆盖广泛的材料系统，我们的目标是实现一个生长设施，包括一个有8个靶材的超高真空溅射系统，一个氧化物室，一个配备了多个渗出室的分子束外延系统，以及一个通过公共传输管连接的电子束蒸发器，允许在超高真空条件下在不同的室之间无缝交换样品。