MBE-Sputtering-system for antiferromagnetic spintronic materials

许多自旋电子效应，如巨型和隧道磁电阻（GMR， TMR）用于新型磁性器件，如磁性随机存取存储器（ram）或磁性硬盘，已经在薄膜系统中被发现，这些薄膜系统使用先进的薄膜沉积技术精确设计为具有明确的锐界面和高晶体质量。从复杂的材料系统中实现这种外延薄膜常常导致令人惊叹的自旋电子效应的发现，这种效应允许以低功耗进行非常快速的操作。因此，包括（半）金属、氧化物化合物、半导体和超导体在内的各种材料系统的薄膜制备技术已成为自旋电子学研究的焦点。近年来，自旋电子学研究取得了突破，揭示了使用反铁磁体（AFs）代替铁磁体来实现更强大的自旋电子功能的可能性。在以前的磁性器件中，AFs仅用作辅助元件，因为AFs的固有特性（例如可忽略的磁磁化）不允许在中等磁场下操纵反铁磁顺序。然而，已有研究表明，AFs固有的对称性允许极快地操纵磁顺序，并可能导致新的自旋电子效应。特别是，晶体和磁晶格的组合对称性在无净磁化的自旋极化带、反常和自旋霍尔效应以及G(T)MR效应等现象的实现中起着至关重要的作用。近年来，在具有特定晶体和磁晶格对称性的外延薄膜上，研究了反铁磁有序的超快电开关和明显相同的倒反铁磁态的检测。因此，外延薄膜的实现是研究AFs中新型自旋现象的必要因素。为了实现AFs的外延薄膜，我们申请了一个由多目标溅射和分子束外延系统组成的簇。为了覆盖更广泛的材料系统，我们的目标是实现一个生长设施，包括一个具有8个目标的特高压溅射系统，一个氧化物室和一个配备多个渗液细胞的MBE系统，以及一个由公共传输管连接的电子束蒸发器，该传输管可以在超高真空条件下在不同的室之间无缝交换样品。

Many spintronic effects, such as gaint and tunnel magnetoresistance (GMR, TMR) used in novel magnetic devices such as magnetic random access memories (RAMs) or magnetic hard disks, have been discovered in thin film systems precisely designed to have well-defined sharp interfaces and high crystalline quality using advanced film deposition techniques. The realization of such epitaxial thin films from complex material systems has often led to breathtaking discoveries of spintronic effects that allow very fast operation with only low power consumption. As a result, preparation techniques involving state-of-the-art deposition of thin films from a variety of material systems, including (semi)metals, oxide compounds, semiconductors, and superconductors, have become the focus of the spintronics research. In recent years, there has been a breakthrough in spintronics research that has revealed the possibility of using antiferromagnets (AFs) instead of ferromagnets to enable far more powerful spintronic functions. In previous magnetic devices, AFs were used only as auxiliary components because the intrinsic properties of AFs, such as negligible magnetic magnetization, do not allow manipulation of the antiferromagnetic order with moderate magnetic fields. However, it has been shown that the intrinsic symmetry properties of AFs allow extremely fast manipulation of the magnetic order and can lead to novel spintronic effects. In particular, the combined symmetries of crystal and magnetic lattices play an essential role in enabling phenomena such as spin-polarized bands in AFs without net-magnetization, the anomalous and spin Hall effects, and also G(T)MR effects. Recently, ultrafast electrical switching of antiferromagnetic order and detection of apparently identical inverted antiferromagnetic states have been demonstrated in epitaxial thin films with specific crystal and magnetic lattice symmetries. The realization of epitaxial thin films is therefore an essential element in the research of novel spin phenomena in AFs. To realize epitaxial thin films of AFs, we apply for a cluster consisting of multitarget sputtering and molecular beam epitaxy (MBE) systems. In order to cover a wide range of material systems, we aim to realize a growth facility comprising a UHV sputtering system with 8 targets, a chamber for oxides and an MBE system equipped with multiple effusion cells and an e-beam evaporator connected by a common transfer tube that allows seamless sample exchange between the different chambers within ultra-high vacuum conditions.