Development of psudobinary amorphous transparent conductive ooxide films and their applications totransparent electrodes

伪二元非晶透明导电氧化物薄膜的研制及其在透明电极中的应用

基本信息

批准号：
16560276
负责人：
TOMINAGA Kikuo
金额：
$ 2.11万
依托单位：
The University of Tokushima
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560276/
关键词：
transparent conductive electrode amorphous film zinc oxide indium oxide ITO ZnO-In_2O_3 ZnO-SnO_2 ZnO-SnO_2

项目摘要

In the research of grant-in-aid for 2004 and 2005, we deposited In_2O_3-ZnO and In_2O_3-SnO_2 films in Ar gas by facing target sputtering system using ZnO or SnO_2 target and In_2O_3 ceramic targets. We investigated their electrical and optical properties under additional Al_2O_3 or Ga_2O_3 impurities. The impurities of Al_2O_3 or Ga_2O_3 were added to ZnO targets. The discharge current of each target was changed from 0 to 80 mA and the current ratio of δ=I_<Zn>/(I_<Zn>+I_<In>) was nearly the same as the content ratio of Zn and In in the film. The influence of Ga_2O_3 wais the same as those of Al_2O_3. At the δ values of 0〜0.2,0.2-0.6,0.6-0.8 and 0.8-1.0, In_2O_3 structure, amorphous structure, homologous and ZnO structure were obtained, respectively. With increasing Ga_2O_3 or Al_2O_3, the δ values, where amorphous phase appeared, shifted to δ=0.23 to 0.67. The lowest resistiviity appeared at the amorphous phase for both cases. The incorporation of these impurities did not induce a severe influence on the amorphous phase film, although the resistiviity of homologous crystalline films increased with incorporation of these impurities. These data show that the impurities does not act as donors. The role of the impurity appeared in the enlargement of optical band gap, which improve the optical transparency at the blue region. This was induced by the internal stress with increasing Ga_2O_3 and Al_2O_3. In both films, the surface of amorphous films were smoother than those of crystalline films. These results suggest that the amorphous films have a excellent potential for future transparent conductive oxide films.

在2004年和2005年的赠款研究中，我们通过使用ZnO或sno_2 target和in_2o_3 ceramic目标面对目标溅射系统，使AR GAS中的IN_2O_3-ZNO和IN_2O_3-SNO_2胶片在AR气体中存放。我们在附加的Al_2O_3或GA_2O_3杂质下研究了它们的电气和光学特性。将Al_2O_3或GA_2O_3的杂质添加到ZnO目标中。每个目标的放电电流从0更改为80 mA，并且δ= i_ <zn>/（I_ <Zn>+i_ <in>）的电流比与Zn的内容比和膜中的内容比几乎相同。 GA_2O_3的影响与Al_2O_3的影响相同。在0至0.2,0.2-0.6,0.6-0.8和0.8-1.0的δ值下，分别获得了IN_2O_3结构，无定形结构，同源和ZnO结构。随着GA_2O_3或AL_2O_3的增加，出现无定形相的δ值转移到δ= 0.23至0.67。两种情况下，最低的电阻率出现在无定形阶段。这些杂质的工业化并没有引起对非晶相膜的严重影响，尽管同源晶体膜的电阻率随这些杂质的收入而增加。这些数据表明，杂质不充当捐助者。杂质的作用出现在光条间隙的增加中，从而提高了蓝色区域的光学透明度。这是由内部压力随着GA_2O_3和AL_2O_3的增加而引起的。在这两部电影中，无定形膜的表面都比结晶膜光滑。这些结果表明，无定形膜对于将来透明的氧化导电膜具有极大的潜力。

项目成果

期刊论文数量（52）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Transparent Conducting Amorphous Zn-Sn-O Films Characterization of Transparent Conducting Amorphous ZnO-SnO2 films Deposited by Opposed Target Sputtering System

透明导电非晶 Zn-Sn-O 薄膜对置靶溅射系统沉积的透明导电非晶 ZnO-SnO2 薄膜的表征

DOI：
发表时间：
期刊：
The 13^<th> International Conference on Processing and Fabrication of Advanced Materials Singapore Dec.,2004
影响因子：
0
作者：
M.Takeguchi;M.R.McCartney;D.J.Smith;K.Tominaga et al.;Y.Hayashi et al.;T.Moriga et al.;Y.Hayashi et al.;K.Tominaga et al.;T.Moriga et al.;Y.Hayashi et al.;K.Tominaga et al.;Y.Hayashi et al.;Y.Hayashi et al.
通讯作者：
Y.Hayashi et al.

ZnO-SnO2 transparent conductive films deposited by opposed target sputtering of ZnO and SnO2 targets

ZnO和SnO2靶材对向溅射沉积的ZnO-SnO2透明导电薄膜

DOI：
发表时间：
2004
期刊：
Vacuum Vol.74 No.3-4
影响因子：
0
作者：
M.Takeguchi;M.R.McCartney;D.J.Smith;K.Tominaga et al.;Y.Hayashi et al.;T.Moriga et al.;Y.Hayashi et al.;K.Tominaga et al.;T.Moriga et al.;Y.Hayashi et al.
通讯作者：
Y.Hayashi et al.

Effects of Introduction of Argon on Structural and Transparent Conducting properties of ZnO-In2O3 Thin Films Prepared by Pulsed Laser Deposition

氩气的引入对脉冲激光沉积制备的ZnO-In2O3薄膜结构和透明导电性能的影响

DOI：
发表时间：
2005
期刊：
Thin Solid Films Vol.486
影响因子：
0
作者：
Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;服部充宏;Javier Camargo Luran;吉田晃周;沼田和也;谷口喜浩;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Mitsuhiro Hatori;Javier Camargo Luran;Akihiro Yoshida;Kazuya Numata;Yoshihiro Taniguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;酒井誉平;平尾敏廣;服部充宏;Javier Camargo Luran;吉田晃周;Akihiro Yoshida;Toshiyuki Yamaguchi;Yohei Sakai;Toshihiro Hirao;Mitsuhiro Hatori;Javier Camargo Luran;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;酒井誉平;平尾敏廣;服部充宏;Javier Camargo Luran;吉田晃周;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;仲成浩;酒井誉平;平尾敏廣;石橋卓也;巻川晃典;Toshiyuki Yamaguchi;Masahiro Naka;Yohei Sakai;Toshihiro Hirao;Takuya Ishibashi;Kousuke Makigawa;Toshiyuki Yamaguchi;Toshihiro Moriga et al.;Toshihiro Moriga et al.;Toshihiro Moriga et al.;Toshihiro Moriga et al.;Michio Mikawa et al.;Kikuo Tominaga et al.;Toshihiro Moriga et al.;Toshihiro Moriga et al.
通讯作者：
Toshihiro Moriga et al.

Al-impurity-doped Transparent Conductive Oxide Films of In_2O_3-ZnO System

In_2O_3-ZnO系Al杂质掺杂透明导电氧化物薄膜

DOI：
发表时间：
2004
期刊：
Vacuum 74-3-74-4
影响因子：
0
作者：
M.Takeguchi;M.R.McCartney;D.J.Smith;K.Tominaga et al.
通讯作者：
K.Tominaga et al.

Characterization of transparent conducting amorphous ZnO-SnO2 films deposited by opposed target sputtering system

对置靶溅射系统沉积透明导电非晶 ZnO-SnO2 薄膜的表征

DOI：
发表时间：
2004
期刊：
The 13^<th> International Conference on Processing and Fabrication of Advanced Materials Singapore Dec.
影响因子：
0
作者：
M.Takeguchi;M.R.McCartney;D.J.Smith;K.Tominaga et al.;Y.Hayashi et al.;T.Moriga et al.;Y.Hayashi et al.;K.Tominaga et al.;T.Moriga et al.;Y.Hayashi et al.;K.Tominaga et al.;Y.Hayashi et al.
通讯作者：
Y.Hayashi et al.