Development of psudobinary amorphous transparent conductive ooxide films and their applications totransparent electrodes

伪二元非晶透明导电氧化物薄膜的研制及其在透明电极中的应用

• 批准号: 16560276
• 负责人: TOMINAGA Kikuo
• 金额: $ 2.11万
• 依托单位: The University of Tokushima
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560276/
• 关键词: transparent conductive electrode; amorphous film; zinc oxide; indium oxide; ITO; ZnO-In_2O_3; ZnO-SnO_2; ZnO-SnO_2

In the research of grant-in-aid for 2004 and 2005, we deposited In_2O_3-ZnO and In_2O_3-SnO_2 films in Ar gas by facing target sputtering system using ZnO or SnO_2 target and In_2O_3 ceramic targets. We investigated their electrical and optical properties under additional Al_2O_3 or Ga_2O_3 impurities. The impurities of Al_2O_3 or Ga_2O_3 were added to ZnO targets. The discharge current of each target was changed from 0 to 80 mA and the current ratio of δ=I_<Zn>/(I_<Zn>+I_<In>) was nearly the same as the content ratio of Zn and In in the film. The influence of Ga_2O_3 wais the same as those of Al_2O_3. At the δ values of 0〜0.2,0.2-0.6,0.6-0.8 and 0.8-1.0, In_2O_3 structure, amorphous structure, homologous and ZnO structure were obtained, respectively. With increasing Ga_2O_3 or Al_2O_3, the δ values, where amorphous phase appeared, shifted to δ=0.23 to 0.67. The lowest resistiviity appeared at the amorphous phase for both cases. The incorporation of these impurities did not induce a severe influence on the amorphous phase film, although the resistiviity of homologous crystalline films increased with incorporation of these impurities. These data show that the impurities does not act as donors. The role of the impurity appeared in the enlargement of optical band gap, which improve the optical transparency at the blue region. This was induced by the internal stress with increasing Ga_2O_3 and Al_2O_3. In both films, the surface of amorphous films were smoother than those of crystalline films. These results suggest that the amorphous films have a excellent potential for future transparent conductive oxide films.

在2004年和2005年的资助研究中，我们利用ZnO或SnO_2靶材和In_2O_3陶瓷靶材在氩气中制备了In_2O_3-ZnO和In_2O_3-SnO_2薄膜。在添加Al_2O_3或Ga_2O_3杂质时，研究了它们的电学和光学性质。将Al_2O_3或Ga_2O_3杂质添加到ZnO靶材中。各靶的放电电流在0 ~ 80 mA范围内变化，δ=I_<Zn>/(I_<Zn>+I_<In>)的电流比与薄膜中Zn和In的含量比基本一致。Ga_2O_3的影响与Al_2O_3相同。δ值为0 ~ 0.2、0.2 ~ 0.6、0.6 ~ 0.8和0.8 ~ 1.0时，分别得到In_2O_3结构、非晶结构、同源结构和ZnO结构。随着Ga_2O_3和Al_2O_3的增加，出现非晶相的δ值在δ=0.23 ~ 0.67之间变化。两种情况下，非晶相的电阻率最低。这些杂质的掺入并没有对非晶相膜产生严重的影响，尽管这些杂质的掺入增加了同源晶体膜的电阻率。这些数据表明，杂质不充当供体。杂质的作用是增大光学带隙，提高蓝色区域的光学透明度。这是随着Ga_2O_3和Al_2O_3的增加而引起的内应力。在两种薄膜中，非晶薄膜的表面都比晶体薄膜光滑。这些结果表明，非晶膜在未来的透明导电氧化膜中具有良好的潜力。

项目成果

Transparent Conducting Amorphous Zn-Sn-O Films Characterization of Transparent Conducting Amorphous ZnO-SnO2 films Deposited by Opposed Target Sputtering System

透明导电非晶 Zn-Sn-O 薄膜 对置靶溅射系统沉积的透明导电非晶 ZnO-SnO2 薄膜的表征

• 期刊: The 13^<th> International Conference on Processing and Fabrication of Advanced Materials Singapore Dec.,2004
• 作者: M.Takeguchi;M.R.McCartney;D.J.Smith;K.Tominaga et al.;Y.Hayashi et al.;T.Moriga et al.;Y.Hayashi et al.;K.Tominaga et al.;T.Moriga et al.;Y.Hayashi et al.;K.Tominaga et al.;Y.Hayashi et al.;Y.Hayashi et al.
• 通讯作者: Y.Hayashi et al.

ZnO-SnO2 transparent conductive films deposited by opposed target sputtering of ZnO and SnO2 targets

ZnO和SnO2靶材对向溅射沉积的ZnO-SnO2透明导电薄膜

• 发表时间: 2004
• 期刊: Vacuum Vol.74 No.3-4
• 作者: M.Takeguchi;M.R.McCartney;D.J.Smith;K.Tominaga et al.;Y.Hayashi et al.;T.Moriga et al.;Y.Hayashi et al.;K.Tominaga et al.;T.Moriga et al.;Y.Hayashi et al.
• 通讯作者: Y.Hayashi et al.

Characterization of ZnO-In_2O_3 Transparent Conducting Films by Pulsed Laser Deposition

脉冲激光沉积表征ZnO-In_2O_3透明导电薄膜

• 发表时间: 2005
• 期刊: Materials Research Bulletin 40.6
• 作者: Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;服部 充宏;Javier Camargo Luran;吉田 晃周;沼田 和也;谷口 喜浩;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Mitsuhiro Hatori;Javier Camargo Luran;Akihiro Yoshida;Kazuya Numata;Yoshihiro Taniguchi;Toshiyuki Yamaguchi;山口 利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;酒井誉平;平尾敏廣;服部充宏;Javier Camargo Luran;吉田晃周;Akihiro Yoshida;Toshiyuki Yamaguchi;Yohei Sakai;Toshihiro Hirao;Mitsuhiro Hatori;Javier Camargo Luran;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;酒井誉平;平尾敏廣;服部充宏;Javier Camargo Luran;吉田晃周;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口 利幸;仲 成浩;酒井 誉平;平尾 敏廣;石橋 卓也;巻川 晃典;Toshiyuki Yamaguchi;Masahiro Naka;Yohei Sakai;Toshihiro Hirao;Takuya Ishibashi;Kousuke Makigawa;Toshiyuki Yamaguchi;Toshihiro Moriga et al.;Toshihiro Moriga et al.;Toshihiro Moriga et al.;Toshihiro Moriga et al.;Michio Mikawa et al.
• 通讯作者: Michio Mikawa et al.

Effects of Introduction of Argon on Structural and Transparent Conducting properties of ZnO-In2O3 Thin Films Prepared by Pulsed Laser Deposition

氩气的引入对脉冲激光沉积制备的ZnO-In2O3薄膜结构和透明导电性能的影响

• 发表时间: 2005
• 期刊: Thin Solid Films Vol.486
• 作者: Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口利幸;服部 充宏;Javier Camargo Luran;吉田 晃周;沼田 和也;谷口 喜浩;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Mitsuhiro Hatori;Javier Camargo Luran;Akihiro Yoshida;Kazuya Numata;Yoshihiro Taniguchi;Toshiyuki Yamaguchi;山口 利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;山口 利幸;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;酒井誉平;平尾敏廣;服部充宏;Javier Camargo Luran;吉田晃周;Akihiro Yoshida;Toshiyuki Yamaguchi;Yohei Sakai;Toshihiro Hirao;Mitsuhiro Hatori;Javier Camargo Luran;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口利幸;酒井誉平;平尾敏廣;服部充宏;Javier Camargo Luran;吉田晃周;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;Toshiyuki Yamaguchi;山口 利幸;仲 成浩;酒井 誉平;平尾 敏廣;石橋 卓也;巻川 晃典;Toshiyuki Yamaguchi;Masahiro Naka;Yohei Sakai;Toshihiro Hirao;Takuya Ishibashi;Kousuke Makigawa;Toshiyuki Yamaguchi;Toshihiro Moriga et al.;Toshihiro Moriga et al.;Toshihiro Moriga et al.;Toshihiro Moriga et al.;Michio Mikawa et al.;Kikuo Tominaga et al.;Toshihiro Moriga et al.;Toshihiro Moriga et al.
• 通讯作者: Toshihiro Moriga et al.

Al-impurity-doped Transparent Conductive Oxide Films of In_2O_3-ZnO System

In_2O_3-ZnO系Al杂质掺杂透明导电氧化物薄膜

• 发表时间: 2004
• 期刊: Vacuum 74-3-74-4
• 作者: M.Takeguchi;M.R.McCartney;D.J.Smith;K.Tominaga et al.
• 通讯作者: K.Tominaga et al.