Development of Planar Magnetron Sputtering System with Facing Targets

面向靶材平面磁控溅射系统的研制

基本信息

批准号：
01550249
负责人：
TOMINAGA Kikuo
金额：
$ 1.34万
依托单位：
The University of Tokushima
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550249/
关键词：
Sputtering system with facing targets Planar magnetron sputtering ZnO film AlN film 透明導電膜

项目摘要

In this investigation, planar magnetron sputtering system with obliquely facing two targets was constructed, and films of AlN and ZnO were prepared. Some properties of these films were investigated and the utility of this sputtering system at the sputtered film preparation was studied. At first, in AlN film preparations, it was demonstrated that discharge was maintained even at gas pressures of the order of 10^<-4> Torr in N_2 atmosphere. Obtained AIN films were all c-axis oriented(c-axis is normal to the substrate), and the degree of c-axis orientation was high. The sputtering was stable, and even at low gasubstrate temperature of 50ﾟC, c-axis oriented AlN films were prepared. These results showed that this sputtering system is effective in the film preparation. Highly c-axis oriented films were obtained at the gas pressures of the order of 10^<-3> Torr. However, at the pressures below 1X10^<-3> Torr, the film degradation such as the decrease of c-axis orientation, film coloring and film peeling were observed. from the results of optical transmittance and film composition estimation by energy-dispersion X-ray spectroscopy, these film degradation were related to the, excess of N atoms in the film growth. This is thought to be due to the implantation of N ions into the film at lower gas pressures. It was also found that application of magnetic field in front of the substrate is effective to increase the degree of c-axis orientation. This indicates that the exposure of AlN film to the plasma influences the film quality.In ZnO film preparation by the sputtering of Zn targets in O^2 gas, film bombardment by energetic O^- and O atoms should be avoided to obtain highly c-axis oriented ZnO films. Therefore. in, the obliquely facing target system, the inclination angle of the target is limited in a certain angle.

在这项投资中，构建了具有倾斜的两个目标的平面磁铁溅射系统，并制备了Aln和ZnO的膜。研究了这些薄膜的某些特性，并研究了这种溅射系统在溅射膜制备中的实用性。最初，在ALN膜制剂中，证明即使在N_2大气中的10^<-4> Torr的气压下，也保持了排放。获得的AIN膜都是面向C轴的（C轴正常的），并且面向C轴的程度很高。溅射是稳定的，即使在50°C的低温基板温度下，也准备了面向C轴的ALN膜。这些结果表明，这种溅射系统在膜制备中有效。在10^<-3>托尔的气压下获得了高度C轴的膜。但是，在1x10^<-3>托尔的压力下，观察到薄膜降解，例如C轴取向的减少，膜着色和薄膜剥离。从通过能量分散X射线光谱的光学传递和膜组成估计的结果中，这些薄膜降解与膜生长中的N原子超过N原子有关。这被认为是由于在低气压下将n离子植入膜中。还发现，磁场在底物前面的应用有效增加C轴取向的程度。这表明，Aln膜暴露于等离子体会影响膜质量。在ZnO薄膜制备中，通过在O^2气体中溅射Zn靶标，应避免使用能量O^ - O t膜轰击，并避免O原子以获得高度的C轴方向ZNO膜。所以。在倾斜的目标系统中，目标的倾斜角在一定角度受到限制。