Study on the control of film properties by low energy ions in sputtering process

在这项研究中，对于硝酸盐和氧化物的DC反应性分离过程，我们调查了离子的影响，以影响薄膜属性的基础。自从一个带有两个面目标的隔离系统被认为是有效的，以减少对底层能量的电影轰炸，我们将此系统应用于对底层离子暴露的影响的调查。在AlN的电影沉积中，离子轰炸的影响即使在面对的目标分离系统中也没有被消除，而电影的增长也被离子轰炸所降级。“离子加速的机制如氮素和argon，走向底层将被清除，以便主要由等离子体潜力之间的潜力差异在放电区域和底层浮动潜力之间的作用。”在这部电影上的离子轰炸的影响已经被使用替代的散布技术来消除，其中一个目标在另一个焦油的积极潜力被混淆 ... More 它是假的。该结果表明，离子轰炸可以被这个分裂系统缩小，是什么证实离子轰炸在AlN电影的电影质量中发挥了重要的作用？在底层的前面设置一个网格，也改变了离子通量轰炸底层，这影响了AlN电影中的永久压力。磁场分布在Facing Target Sputtering系统中，影响了离子通量轰炸底层。这些特征与腔中的电子和离子流动有关，作为一个结果，离子流动轰炸了基底。在氧化物的沉积下，我们采用了ZnO薄膜和ITO薄膜。我们无法获得150-200 μ OMEGAcm在ZnO中的抵抗力（截至目前报告的最低价值），仅通过降解能量粒子轰炸沉积薄膜。其他因素对抵抗力的最低价值更重要。我们展示了额外的锌原子对降低电影抵抗力的强烈影响。锌原子的适当添加剂改善了电影晶体管，并增加了载体集中和大厅的流动性。这是由于在多晶体电影增长的第一阶段核的增加。在ITO沉积物中，我们研究了在使用表面目标中降解能量氧的影响。我们可以利用这项技术获得最低的电影抵抗力。Furthermore，使用（00：2） AlN作为一个基础，我们可以增加承运人集中，但霍尔流动性的减少是值得注意的。这是对捐赠者散布的增加。作为一个结果，在ITO电影中的抵抗力中的戏剧性改进是很难的。“对Sndonors服用效率的改进是必要的，因为ITO电影抵抗力中的大量和更多退化。”Less（低）

In this study, for the DC reactive sputtering process for nitrides and oxides, we investigated the influence of ions impinging the substrate on the film properties. Since sputtering system with two faced targets was expected to be effective in decreasing the film bombardment on the substrate by energetic ions, we applied this sytem in investigation of the influence of ion exposure of the substrate. In the film deposition of AlN,the influence of ion bombardment was not decreased even in the facing target sputtering system, and the film growth was degraded by the ion bombardment. The mechanism of acceleration of ions such as nitrogen and argon toward the substrate were cleared to be due to mainly by the potential difference between the plasma potential in discharge region and the floating potential on the substrate. The above influence of ion bombardment on the film was decreased by using alternating sputtering technique where one target was biased at positive potential while another tar … More get was sputtered. The results demonstrated that the ion bombardment can be diminished by this sputtering system, which confirms the ion bombardment is taking an important role in the film quality of AlN film. Setting a mesh in front of the substrate also changed the ion flux bombarding the substrate, which influenced on the residual stress in AlN film. Magnetic field distribution in the facing target sputtering system influenced the ion flux bombarding the substrate. These characteristics were related to the electron and ion flow in the chamber, as a result, the ion flux bombarding the substrate.In the deposition of oxides, we adopted ZnO film and ITO film. We could not obtain the 150-200 mu OMEGAcm resistivity in ZnO (the lowest value reported until now) only by decreasing energetic particles bombarding depositing film. Other factors were more important to acoomplish the lowest value in resistivity. We showed that additional Zn atoms have a strong influence in decreasing the film resistivity. Appropriate addition of Zn atoms improved the film crystallinity, and increased also the carrier concentration and the Hall mobility. This was caused by an increase of nuclei at the first stage in polycrystal film growth. In ITO deposition, we examined the effects of decreasing the energetic oxygen in using facing targets. Certainly we could obtain the lowest film resistivity by this technique. Furthermore, using (00・2) AlN as a substrate we could increase the carrier concentration, but the decrease of Hall mobility was observed. This was due to the increase of donor scattering. As a result, a drastic improvement in resistivity was difficult in ITO film. The improvement of doping efficiency of Sn donors is necessary for much more decrease in ITO film resistivity. Less