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Study on the control of film properties by low energy ions in sputtering process

溅射过程中低能离子对薄膜性能控制的研究

基本信息

批准号：
08650383
负责人：
TOMINAGA Kikuo
金额：
$ 1.54万
依托单位：
THE UNIVERSITY OF TOKUSHIMA
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650383/
关键词：
Sputtering nitride film oxide film AlN ZnO ITO transparent conductive film 酸化亜鉛窒化アルミニウム

项目摘要

In this study, for the DC reactive sputtering process for nitrides and oxides, we investigated the influence of ions impinging the substrate on the film properties. Since sputtering system with two faced targets was expected to be effective in decreasing the film bombardment on the substrate by energetic ions, we applied this sytem in investigation of the influence of ion exposure of the substrate. In the film deposition of AlN,the influence of ion bombardment was not decreased even in the facing target sputtering system, and the film growth was degraded by the ion bombardment. The mechanism of acceleration of ions such as nitrogen and argon toward the substrate were cleared to be due to mainly by the potential difference between the plasma potential in discharge region and the floating potential on the substrate. The above influence of ion bombardment on the film was decreased by using alternating sputtering technique where one target was biased at positive potential while another tar … More get was sputtered. The results demonstrated that the ion bombardment can be diminished by this sputtering system, which confirms the ion bombardment is taking an important role in the film quality of AlN film. Setting a mesh in front of the substrate also changed the ion flux bombarding the substrate, which influenced on the residual stress in AlN film. Magnetic field distribution in the facing target sputtering system influenced the ion flux bombarding the substrate. These characteristics were related to the electron and ion flow in the chamber, as a result, the ion flux bombarding the substrate.In the deposition of oxides, we adopted ZnO film and ITO film. We could not obtain the 150-200 mu OMEGAcm resistivity in ZnO (the lowest value reported until now) only by decreasing energetic particles bombarding depositing film. Other factors were more important to acoomplish the lowest value in resistivity. We showed that additional Zn atoms have a strong influence in decreasing the film resistivity. Appropriate addition of Zn atoms improved the film crystallinity, and increased also the carrier concentration and the Hall mobility. This was caused by an increase of nuclei at the first stage in polycrystal film growth. In ITO deposition, we examined the effects of decreasing the energetic oxygen in using facing targets. Certainly we could obtain the lowest film resistivity by this technique. Furthermore, using (00・2) AlN as a substrate we could increase the carrier concentration, but the decrease of Hall mobility was observed. This was due to the increase of donor scattering. As a result, a drastic improvement in resistivity was difficult in ITO film. The improvement of doping efficiency of Sn donors is necessary for much more decrease in ITO film resistivity. Less

在本研究中，针对氮化物和氧化物的直流反应溅射工艺，我们研究了离子撞击衬底对薄膜性能的影响。由于双面靶溅射系统有望有效地减少高能离子对衬底薄膜的轰击，我们将该系统应用于研究离子暴露对衬底的影响。在AlN的薄膜沉积过程中，离子轰击的影响即使在面对目标溅射系统中也没有减弱，离子轰击降低了薄膜的生长。氮、氩等离子向衬底加速的机理主要是由放电区等离子体电位与衬底浮电位之间的电位差引起的。离子轰击对薄膜的上述影响通过使用交替溅射技术来减小，交替溅射技术使一个靶偏向于正电位，而另一个靶偏向于正电位。结果表明，该溅射系统能有效地减少离子轰击，证实了离子轰击对AlN薄膜的成膜质量起着重要作用。在衬底前设置网格也改变了轰击衬底的离子通量，从而影响了AlN薄膜中的残余应力。面对靶溅射系统中的磁场分布影响轰击衬底的离子通量。这些特性与腔室中的电子和离子流有关，因此离子流轰击衬底。在氧化物的沉积中，我们采用了ZnO薄膜和ITO薄膜。仅通过减少高能粒子轰击沉积膜，我们无法获得ZnO中150-200 mu的OMEGAcm电阻率（迄今为止报道的最低值）。其他因素对于实现电阻率的最低值更为重要。结果表明，添加Zn原子对降低薄膜电阻率有很大的影响。适当添加Zn原子可以改善薄膜的结晶度，提高载流子浓度和霍尔迁移率。这是由于在多晶薄膜生长的第一阶段原子核的增加所引起的。在ITO沉积中，我们研究了在使用面靶时减少含能氧的影响。当然，我们可以通过这种技术获得最低的薄膜电阻率。此外，使用（00·2）AlN作为衬底可以增加载流子浓度，但观察到霍尔迁移率降低。这是由于供体散射的增加。因此，ITO薄膜的电阻率很难大幅度提高。锡给体掺杂效率的提高是进一步降低ITO膜电阻率的必要条件。少