Study on the control of film properties by low energy ions in sputtering process

溅射过程中低能离子对薄膜性能控制的研究

基本信息

批准号：
08650383
负责人：
TOMINAGA Kikuo
金额：
$ 1.54万
依托单位：
THE UNIVERSITY OF TOKUSHIMA
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650383/
关键词：
Sputtering nitride film oxide film AlN ZnO ITO transparent conductive film 酸化亜鉛窒化アルミニウム

项目摘要

In this study, for the DC reactive sputtering process for nitrides and oxides, we investigated the influence of ions impinging the substrate on the film properties. Since sputtering system with two faced targets was expected to be effective in decreasing the film bombardment on the substrate by energetic ions, we applied this sytem in investigation of the influence of ion exposure of the substrate. In the film deposition of AlN,the influence of ion bombardment was not decreased even in the facing target sputtering system, and the film growth was degraded by the ion bombardment. The mechanism of acceleration of ions such as nitrogen and argon toward the substrate were cleared to be due to mainly by the potential difference between the plasma potential in discharge region and the floating potential on the substrate. The above influence of ion bombardment on the film was decreased by using alternating sputtering technique where one target was biased at positive potential while another tar … More get was sputtered. The results demonstrated that the ion bombardment can be diminished by this sputtering system, which confirms the ion bombardment is taking an important role in the film quality of AlN film. Setting a mesh in front of the substrate also changed the ion flux bombarding the substrate, which influenced on the residual stress in AlN film. Magnetic field distribution in the facing target sputtering system influenced the ion flux bombarding the substrate. These characteristics were related to the electron and ion flow in the chamber, as a result, the ion flux bombarding the substrate.In the deposition of oxides, we adopted ZnO film and ITO film. We could not obtain the 150-200 mu OMEGAcm resistivity in ZnO (the lowest value reported until now) only by decreasing energetic particles bombarding depositing film. Other factors were more important to acoomplish the lowest value in resistivity. We showed that additional Zn atoms have a strong influence in decreasing the film resistivity. Appropriate addition of Zn atoms improved the film crystallinity, and increased also the carrier concentration and the Hall mobility. This was caused by an increase of nuclei at the first stage in polycrystal film growth. In ITO deposition, we examined the effects of decreasing the energetic oxygen in using facing targets. Certainly we could obtain the lowest film resistivity by this technique. Furthermore, using (00・2) AlN as a substrate we could increase the carrier concentration, but the decrease of Hall mobility was observed. This was due to the increase of donor scattering. As a result, a drastic improvement in resistivity was difficult in ITO film. The improvement of doping efficiency of Sn donors is necessary for much more decrease in ITO film resistivity. Less

在这项研究中，对于氮化物和氧化物的直流反应溅射过程，我们研究了影响底物对膜特性的离子的影响。由于预计具有两个面对目标的溅射系统可以有效地通过高能离子降低膜轰击的膜轰击，因此我们将该系统应用于基板离子暴露的影响。在ALN的膜沉积中，即使在面对目标溅射氮和氩等离子加速的机理中，离子轰击的影响也不会减少，例如氮和氩对底物的加速机制，主要是由于排放区域中的等离子体电位与排放区域的浮力电位和底物上的浮力势之间的电位差。通过使用替代溅射技术减少了离子轰击对膜的上述影响，在这种溅射技术中，一个目标以积极的潜力有偏见，而另一个焦油……越来越多地溅射。结果表明，这种溅射系统可以减少离子轰击，这证实离子轰炸在Aln电影的电影质量中发挥了重要作用。在底物的前面设置网格也改变了离子通量轰击的底物，这影响了Aln膜中的残留应力。面向目标溅射系统中的磁场分布影响了离子通量轰击基板。这些特征与腔室中的电子和离子流有关，因此，氧化物的沉积，我们采用了ZnO膜和ITO膜。我们无法通过减少能量颗粒轰炸沉积膜来获得ZnO中150-200 MU OmegACM的抗性（迄今为止报道的最低值）。其他因素对于抗性最低值更为重要。我们表明，其他锌原子在降低膜电阻率方面具有很强的影响。适当添加Zn原子可以改善膜结晶度，并增加了载体浓度和霍尔迁移率。这是由于多晶膜增长的第一阶段核的增加引起的。在ITO沉积中，我们检查了使用靶标减少能量氧的影响。当然，我们可以通过这种技术获得最低的膜抗性。此外，使用（00・2）ALN作为底物，我们可以增加载体浓度，但是观察到Hall迁移率的减小。这是由于供体散射的增加。结果，ITO膜的耐药性急剧提高。需要提高SN捐赠者的掺杂效率，对于ITO膜耐药性较大的降低是必不可少的。较少的