Development of amorphous transparent conductive oxide films and their applications to transparent electrodes

非晶透明导电氧化物薄膜的研制及其在透明电极中的应用

• 批准号: 14550301
• 负责人: TOMINAGA Kikuo
• 金额: $ 2.37万
• 依托单位: The University of Tokushima
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550301/
• 关键词: TCO films; Transparent conductive oxide films; amorphous films; In_2O_3-ZnO; SnO_2-ZnO; ZnO-SnO_2; Infrared absorption film; Highly transparent oxide films; アモルファス膜; 酸化亜鉛; ZnO-In_2O_3; ZnO-SnO_2

We deposited In_2O_3-ZnO transparent conductive films by simultaneous sputtering of ZnO and In_2O_3 ceramic targets. Amorphous and homologous phases appeared with increasing δ=Zn/(Zn+In) ratios. Carrier generation mechanism was discussed for these films. Native oxygen defects are the primary donors for the In_2O_3-ZnO films. Then the low resistivities of 2〜4×10^<-4> Ω cm were attained within a narrow range of δ=Zn/(Zn+In) in the amorphous phase film. 2 wt% Al_2O_3-doping decreased the resistivity to 1.5〜2.1×10^<-4>Ωcm. At doping of 3 wt% and 4 wt% Al_2O_3, film resistivities of 2-4×10^<-4> were attained for a relatively wide range of δ in the amorphous phase due to an increase in carrier concentration at δ=0.3-0.6. On the other hand, Al_2O_3 doped in the homologous Zn_kIn_2O_<k+3> crystalline films did not act as donor impurities. The optical bandgap energy for the films deposited above 2 wt% Al_2O_3 for amorphous film was proportional to Al_2O_3 content, ascribed to lattice distortion … More by Al_2O_3. Post annealing under the reductive gas flow was effective on improving unevenness of the amorphous films.Thin films of ZnO-SnO_2 system were also deposited by the same method, where ZnO and SnO_2:Sb (Sb_2O_5 3wt% doped) targets were faced each other. Compositions in as-deposited films were changed with the current ratio δ. Amorphous transparent films appeared in a range of 0.47【less than or equal】δ【less than or equal】0.80 (Zn/(Sn+Zn)=0.28-0.76) at Ts=150℃, in a range of 0.33【less than or equal】δ【less than or equal】0.73 (Zn/(Sn+Zn)=0.32-0.66) at Ts=250℃. At δ=0.62 (Zn/(Sn+Zn)=1/2) or 6=0.73 (Zn/(Sn+Zn)=2/3) and any other ratio in as-deposited films we could obtain neither crystalline ZnSnO_3 nor Zn_2SnO_4 Amorphous films would exist as forms of (ZnSnO_3)_x(SnO_2)_<1-x> in a range of 0.5【less than or equal】δ【less than or equal】0.62 (0【less than or equal】δ【less than or equal】) and (ZnSnO_3)_<1-y>(ZnO)_y, in a range of 0.62【less than or equal】δ【less than or equal】0.73 (0【less than or equal】y【less than or equal】0.5). Minimum resistivity of amorphous films deposited was 3.6×10^<-2> Ωcm at δ=0.50 (Zn/(Sn+Zn)=0.33), Ts=250℃. Less

我们通过简单地溅射ZnO和IN_2O_3陶瓷靶标来沉积IN_2O_3-ZNO透明导电膜。随着δ= Zn/（Zn+in）比率的增加，无定形和同源阶段出现。讨论了这些电影的载体生成机制。天然氧缺陷是IN_2O_3-ZNO膜的主要供体。然后，在无定形相膜中，在δ= Zn/（Zn+in）的狭窄范围内附着2-4×10^<-4>ωcm的低抗性。 2 wt％al_2o_3兴奋剂将电阻降低至1.5至2.1×10^<-4>ωCM。在3 wt％和4 wt％al_2o_3的掺杂时，由于载体浓度在Δ= 0.3-0.6时增加，在非晶相中，在无定形相的Δ范围相对较宽的δ范围获得了2-4×10^<-4>。另一方面，Al_2O_3在同源Zn_kin_2o_ <k+3>结晶膜中掺杂的Al_2O_3并非充当供体杂质。在2 wt％al_2o_3上沉积的膜的光带隙能与Al_2o_3含量成正比，分配给晶格失真…由Al_2o_3分配给晶格失真。在减少的气流下退火可有效改善非晶膜的不均匀性。ZnO-SNO_2系统的薄膜也通过相同的方法沉积，在该方法中，ZnO和SNO_2：SB（SB_2O_2O_5 3WWT％掺杂）彼此面对。随着电流比δ更改了沉积膜中的组成。 Amorphous transparent films appeared in a range of 0.47 [less than or equal] δ [less than or equal] 0.80 (Zn/(Sn+Zn)=0.28-0.76) at Ts=150℃, in a range of 0.33 [less than or equal] δ [less than or equal] 0.73 (Zn/(Sn+Zn)=0.32-0.66) at Ts=250℃.在δ= 0.62（Zn/（sn+Zn）= 1/2）或6 = 0.73（Zn/（sn/（sn+Zn）= 2/3），以及在Aseposited Films中，我们可以获得Crystalline Znsno_3 nor Zn_2Sno_2sno_4的crystalline znsno_4，将其形成（Znsno________________________）范围比0或等于或等于或等于或等于或等于】δ的范围小于或等于或等于或等于或等于或等于或等于或等于或等于】Δ。等] 0.5）。在δ= 0.50（Zn/（sn+Zn）= 0.33）时，沉积的无定形膜的最小电阻为3.6×10^<-2>ωcm，TS = 250℃。较少的

项目成果

T.Moriga, I.Nakabayashi, Kikuo Tominaga et al.: "Transparent Conducting Amorphous Zn-Sn-O Films Deposited by Simultaneous DC Sputtering"J.Vac.Sci.Technol.A. To be published. (2004)

T.Moriga、I.Nakabayashi、Kikuo Tominaga 等人：“通过同步直流溅射沉积透明导电非晶 Zn-Sn-O 薄膜”J.Vac.Sci.Technol.A。

Toshihiro Moriga, Yukako Hayashi, Kumiko Kondo, Yusuke Nishimura, Kei-ichiro Murai, Ichiro Nakabayashi, Hidenori Fukumoto, Kikuo Tominaga: "Transparent Conducting Amorphous Zn-Sn-O Films Deposited by Simultaneous DC Sputtering"J.Vac.Sci.Technol.A. (to be

Toshihiro Moriga、Yukako Hayashi、Kumiko Kondo、Yusuke Nishimura、Kei-ichiro Murai、Ichiro Nakabayashi、Hidenori Fukumoto、Kikuo Tominaga：“通过同步直流溅射沉积透明导电非晶 Zn-Sn-O 薄膜”J.Vac.Sci.Technol。

K.Tominaga et al.: "Amorphous ZnO-In2O3 transparent conductive films by simultaneous Sputtering method of ZnO and In_2O_3 targets"Vacuum. 66. 505-509 (2002)

K.Tominaga等：“通过ZnO和In_2O_3靶材同时溅射方法制备非晶ZnO-In2O3透明导电薄膜”真空。

K.Tominaga et al.: "Amorphous ZnO-In_2O_3 transparent conductive films by simultaneous sputtering method of ZnO and In_2O_3 targets"Vacuum. 66. 505-509 (2002)

K.Tominaga等：“通过ZnO和In_2O_3靶材同时溅射方法制备非晶ZnO-In_2O_3透明导电薄膜”真空。

K.Tominaga, I.Nakabayashi et al.: "Al-impurity-doped transparent conductive oxide films of In_2O_3-ZnO system"Vacuum. To be published. (2004)

K.Tominaga，I.Nakabayashi等：“Al-杂质掺杂的In_2O_3-ZnO系透明导电氧化物薄膜”真空。