Development of amorphous transparent conductive oxide films and their applications to transparent electrodes

非晶透明导电氧化物薄膜的研制及其在透明电极中的应用

• 批准号: 14550301
• 负责人: TOMINAGA Kikuo
• 金额: $ 2.37万
• 依托单位: The University of Tokushima
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2002
• 资助国家: 日本
• 起止时间: 2002 至 2003
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-14550301/
• 关键词: TCO films; Transparent conductive oxide films; amorphous films; In_2O_3-ZnO; SnO_2-ZnO; ZnO-SnO_2; Infrared absorption film; Highly transparent oxide films; アモルファス膜; 酸化亜鉛; ZnO-In_2O_3; ZnO-SnO_2

We deposited In_2O_3-ZnO transparent conductive films by simultaneous sputtering of ZnO and In_2O_3 ceramic targets. Amorphous and homologous phases appeared with increasing δ=Zn/(Zn+In) ratios. Carrier generation mechanism was discussed for these films. Native oxygen defects are the primary donors for the In_2O_3-ZnO films. Then the low resistivities of 2〜4×10^<-4> Ω cm were attained within a narrow range of δ=Zn/(Zn+In) in the amorphous phase film. 2 wt% Al_2O_3-doping decreased the resistivity to 1.5〜2.1×10^<-4>Ωcm. At doping of 3 wt% and 4 wt% Al_2O_3, film resistivities of 2-4×10^<-4> were attained for a relatively wide range of δ in the amorphous phase due to an increase in carrier concentration at δ=0.3-0.6. On the other hand, Al_2O_3 doped in the homologous Zn_kIn_2O_<k+3> crystalline films did not act as donor impurities. The optical bandgap energy for the films deposited above 2 wt% Al_2O_3 for amorphous film was proportional to Al_2O_3 content, ascribed to lattice distortion … More by Al_2O_3. Post annealing under the reductive gas flow was effective on improving unevenness of the amorphous films.Thin films of ZnO-SnO_2 system were also deposited by the same method, where ZnO and SnO_2:Sb (Sb_2O_5 3wt% doped) targets were faced each other. Compositions in as-deposited films were changed with the current ratio δ. Amorphous transparent films appeared in a range of 0.47【less than or equal】δ【less than or equal】0.80 (Zn/(Sn+Zn)=0.28-0.76) at Ts=150℃, in a range of 0.33【less than or equal】δ【less than or equal】0.73 (Zn/(Sn+Zn)=0.32-0.66) at Ts=250℃. At δ=0.62 (Zn/(Sn+Zn)=1/2) or 6=0.73 (Zn/(Sn+Zn)=2/3) and any other ratio in as-deposited films we could obtain neither crystalline ZnSnO_3 nor Zn_2SnO_4 Amorphous films would exist as forms of (ZnSnO_3)_x(SnO_2)_<1-x> in a range of 0.5【less than or equal】δ【less than or equal】0.62 (0【less than or equal】δ【less than or equal】) and (ZnSnO_3)_<1-y>(ZnO)_y, in a range of 0.62【less than or equal】δ【less than or equal】0.73 (0【less than or equal】y【less than or equal】0.5). Minimum resistivity of amorphous films deposited was 3.6×10^<-2> Ωcm at δ=0.50 (Zn/(Sn+Zn)=0.33), Ts=250℃. Less

我们通过同时溅射ZnO和In_2O_3陶瓷靶材沉积了In_2O_3-ZnO透明导电薄膜。随着 δ=Zn/(Zn+In) 比率的增加，出现非晶相和同系相。对这些薄膜的载流子产生机制进行了讨论。原生氧缺陷是 In_2O_3-ZnO 薄膜的主要供体。然后在非晶相膜中在δ＝Zn/(Zn+In)的窄范围内获得2～4×10^-4Ωcm的低电阻率。 2wt%Al_2O_3掺杂使电阻率降低至1.5〜2.1×10^-4Ωcm。当Al_2O_3的掺杂量为3wt％和4wt％时，由于载流子浓度在δ＝0.3-0.6处增加，因此在非晶相中相对较宽的δ范围内获得了2-4×10^-4的薄膜电阻率。另一方面，掺杂在同系Zn_kIn_2O_<k+3>晶体膜中的Al_2O_3不充当施主杂质。对于非晶薄膜，沉积在 2 wt% Al_2O_3 以上的薄膜的光学带隙能量与 Al_2O_3 含量成正比，这归因于 Al_2O_3 的晶格畸变。还原气流下的后退火可有效改善非晶薄膜的不均匀性。采用相同的方法还沉积了ZnO-SnO_2体系薄膜，其中ZnO和SnO_2:Sb(Sb_2O_5 3wt%掺杂)靶材彼此相对。沉积薄膜的成分随着电流比δ而变化​​。 Ts=150℃时，出现非晶态透明薄膜在0.47【小于等于】δ【小于等于】0.80（Zn/（Sn+Zn）=0.28-0.76）范围内，在Ts=150℃时出现在0.33【小于等于】δ【小于等于】0.73（Zn/（Sn+Zn）=0.32-0.66）范围内。 Ts=250℃。在 δ=0.62 (Zn/(Sn+Zn)=1/2) 或 6=0.73 (Zn/(Sn+Zn)=2/3) 和任何其他比例的沉积薄膜中，我们既不能获得结晶 ZnSnO_3 也不能获得 Zn_2SnO_4 非晶薄膜将以 (ZnSnO_3)_x(SnO_2)_<1-x> 的形式存在 0.5【小于等于】δ【小于等于】0.62（0【小于等于】δ【小于等于】）和（ZnSnO_3）_<1-y>（ZnO）_y，0.62【小于等于】δ【小于等于】0.73（0【小于等于】y【小于等于】） 等于】0.5）。在δ＝0.50(Zn/(Sn+Zn)＝0.33)、Ts＝250℃时，沉积的非晶薄膜的最小电阻率为3.6×10^-2Ωcm。较少的

项目成果

T.Moriga, I.Nakabayashi, Kikuo Tominaga et al.: "Transparent Conducting Amorphous Zn-Sn-O Films Deposited by Simultaneous DC Sputtering"J.Vac.Sci.Technol.A. To be published. (2004)

T.Moriga、I.Nakabayashi、Kikuo Tominaga 等人：“通过同步直流溅射沉积透明导电非晶 Zn-Sn-O 薄膜”J.Vac.Sci.Technol.A。

Toshihiro Moriga, Yukako Hayashi, Kumiko Kondo, Yusuke Nishimura, Kei-ichiro Murai, Ichiro Nakabayashi, Hidenori Fukumoto, Kikuo Tominaga: "Transparent Conducting Amorphous Zn-Sn-O Films Deposited by Simultaneous DC Sputtering"J.Vac.Sci.Technol.A. (to be

Toshihiro Moriga、Yukako Hayashi、Kumiko Kondo、Yusuke Nishimura、Kei-ichiro Murai、Ichiro Nakabayashi、Hidenori Fukumoto、Kikuo Tominaga：“通过同步直流溅射沉积透明导电非晶 Zn-Sn-O 薄膜”J.Vac.Sci.Technol。

K.Tominaga et al.: "Amorphous ZnO-In2O3 transparent conductive films by simultaneous Sputtering method of ZnO and In_2O_3 targets"Vacuum. 66. 505-509 (2002)

K.Tominaga等：“通过ZnO和In_2O_3靶材同时溅射方法制备非晶ZnO-In2O3透明导电薄膜”真空。

K.Tominaga et al.: "Amorphous ZnO-In_2O_3 transparent conductive films by simultaneous sputtering method of ZnO and In_2O_3 targets"Vacuum. 66. 505-509 (2002)

K.Tominaga等：“通过ZnO和In_2O_3靶材同时溅射方法制备非晶ZnO-In_2O_3透明导电薄膜”真空。

K.Tominaga, I.Nakabayashi et al.: "Al-impurity-doped transparent conductive oxide films of In_2O_3-ZnO system"Vacuum. To be published. (2004)

K.Tominaga，I.Nakabayashi等：“Al-杂质掺杂的In_2O_3-ZnO系透明导电氧化物薄膜”真空。