Development of amorphous transparent conductive oxide films and their applications to transparent electrodes

非晶透明导电氧化物薄膜的研制及其在透明电极中的应用

基本信息

  • 批准号:
    14550301
  • 负责人:
  • 金额:
    $ 2.37万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
  • 财政年份:
    2002
  • 资助国家:
    日本
  • 起止时间:
    2002 至 2003
  • 项目状态:
    已结题

项目摘要

We deposited In_2O_3-ZnO transparent conductive films by simultaneous sputtering of ZnO and In_2O_3 ceramic targets. Amorphous and homologous phases appeared with increasing δ=Zn/(Zn+In) ratios. Carrier generation mechanism was discussed for these films. Native oxygen defects are the primary donors for the In_2O_3-ZnO films. Then the low resistivities of 2〜4×10^<-4> Ω cm were attained within a narrow range of δ=Zn/(Zn+In) in the amorphous phase film. 2 wt% Al_2O_3-doping decreased the resistivity to 1.5〜2.1×10^<-4>Ωcm. At doping of 3 wt% and 4 wt% Al_2O_3, film resistivities of 2-4×10^<-4> were attained for a relatively wide range of δ in the amorphous phase due to an increase in carrier concentration at δ=0.3-0.6. On the other hand, Al_2O_3 doped in the homologous Zn_kIn_2O_<k+3> crystalline films did not act as donor impurities. The optical bandgap energy for the films deposited above 2 wt% Al_2O_3 for amorphous film was proportional to Al_2O_3 content, ascribed to lattice distortion … More by Al_2O_3. Post annealing under the reductive gas flow was effective on improving unevenness of the amorphous films.Thin films of ZnO-SnO_2 system were also deposited by the same method, where ZnO and SnO_2:Sb (Sb_2O_5 3wt% doped) targets were faced each other. Compositions in as-deposited films were changed with the current ratio δ. Amorphous transparent films appeared in a range of 0.47【less than or equal】δ【less than or equal】0.80 (Zn/(Sn+Zn)=0.28-0.76) at Ts=150℃, in a range of 0.33【less than or equal】δ【less than or equal】0.73 (Zn/(Sn+Zn)=0.32-0.66) at Ts=250℃. At δ=0.62 (Zn/(Sn+Zn)=1/2) or 6=0.73 (Zn/(Sn+Zn)=2/3) and any other ratio in as-deposited films we could obtain neither crystalline ZnSnO_3 nor Zn_2SnO_4 Amorphous films would exist as forms of (ZnSnO_3)_x(SnO_2)_<1-x> in a range of 0.5【less than or equal】δ【less than or equal】0.62 (0【less than or equal】δ【less than or equal】) and (ZnSnO_3)_<1-y>(ZnO)_y, in a range of 0.62【less than or equal】δ【less than or equal】0.73 (0【less than or equal】y【less than or equal】0.5). Minimum resistivity of amorphous films deposited was 3.6×10^<-2> Ωcm at δ=0.50 (Zn/(Sn+Zn)=0.33), Ts=250℃. Less
采用同时溅射ZnO和In_2O_3陶瓷靶的方法制备了In_2O_3-ZnO透明导电薄膜。随着δ=Zn/(Zn+In)比值的增加,出现了非晶相和同质相。对薄膜的载流子产生机理进行了讨论。天然氧缺陷是In_2O_3-ZnO薄膜的主要施主。在<-4>非晶相薄膜中,在δ=Zn/(Zn+In)较窄的范围内,获得了2 ×10^ Ω cm的低电阻率。2wt%Al_2O_3掺杂使电阻率降低到1.5 × 2.1×10^<-4>Ωcm。当Al_2O_3掺杂量为3wt%和4wt%时,<-4>由于载流子浓度在δ=0.3-0.6范围内增加,在非晶相δ较宽的范围内,薄膜的电阻率可达2-4×10 ~(-1)。而Al_2O_3掺杂在Zn_kIn_2O_&lt;k+3&gt;晶体薄膜中并不起施主杂质的作用。在Al_2O_3含量大于2wt%时,非晶薄膜的光学带隙能量与Al_2O_3含量成正比,归因于晶格畸变 ...更多信息 Al_2O_3。用同样的方法制备了ZnO和SnO_2:Sb(Sb_2O_53wt%掺杂)靶相对的ZnO-SnO_2系统薄膜。沉积态薄膜的成分随电流比δ的变化而变化。在Ts=150 ℃时,在0.47[小于或等于] δ [小于或等于]0.80(Zn/(Sn+Zn)=0.28-0.76)的范围内出现非晶透明膜,在Ts=250 ℃时,在0.33[小于或等于]δ[小于或等于]0.73(Zn/(Sn+Zn)=0.32-0.66)的范围内出现非晶透明膜。当δ=0.62(Zn/(Sn+Zn)=1/2)或δ =0.73(Zn/(Sn+Zn)=2/3)以及其它任何比例时,我们都不能得到晶态ZnSnO_3和Zn_2SnO_4。非晶薄膜以(ZnSnO_3)_x(SnO_2)_y(<1-x>0.50 ~ 0.62)和(ZnSnO_3)_<1-y>(ZnO)_y(0.62 ~ 0.73)的形式存在。当<-2>δ=0.50(Zn/(Sn+Zn)=0.33),Ts=250℃时,非晶薄膜的电阻率最小,为3.6×10^ Ωcm。少

项目成果

期刊论文数量(19)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Moriga, I.Nakabayashi, Kikuo Tominaga et al.: "Transparent Conducting Amorphous Zn-Sn-O Films Deposited by Simultaneous DC Sputtering"J.Vac.Sci.Technol.A. To be published. (2004)
T.Moriga、I.Nakabayashi、Kikuo Tominaga 等人:“通过同步直流溅射沉积透明导电非晶 Zn-Sn-O 薄膜”J.Vac.Sci.Technol.A。
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    0
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Toshihiro Moriga, Yukako Hayashi, Kumiko Kondo, Yusuke Nishimura, Kei-ichiro Murai, Ichiro Nakabayashi, Hidenori Fukumoto, Kikuo Tominaga: "Transparent Conducting Amorphous Zn-Sn-O Films Deposited by Simultaneous DC Sputtering"J.Vac.Sci.Technol.A. (to be
Toshihiro Moriga、Yukako Hayashi、Kumiko Kondo、Yusuke Nishimura、Kei-ichiro Murai、Ichiro Nakabayashi、Hidenori Fukumoto、Kikuo Tominaga:“通过同步直流溅射沉积透明导电非晶 Zn-Sn-O 薄膜”J.Vac.Sci.Technol。
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K.Tominaga et al.: "Amorphous ZnO-In2O3 transparent conductive films by simultaneous Sputtering method of ZnO and In_2O_3 targets"Vacuum. 66. 505-509 (2002)
K.Tominaga等:“通过ZnO和In_2O_3靶材同时溅射方法制备非晶ZnO-In2O3透明导电薄膜”真空。
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    0
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K.Tominaga et al.: "Amorphous ZnO-In_2O_3 transparent conductive films by simultaneous sputtering method of ZnO and In_2O_3 targets"Vacuum. 66. 505-509 (2002)
K.Tominaga等:“通过ZnO和In_2O_3靶材同时溅射方法制备非晶ZnO-In_2O_3透明导电薄膜”真空。
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  • 影响因子:
    0
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K.Tominaga, I.Nakabayashi et al.: "Al-impurity-doped transparent conductive oxide films of In_2O_3-ZnO system"Vacuum. To be published. (2004)
K.Tominaga,I.Nakabayashi等:“Al-杂质掺杂的In_2O_3-ZnO系透明导电氧化物薄膜”真空。
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TOMINAGA Kikuo其他文献

TOMINAGA Kikuo的其他文献

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{{ truncateString('TOMINAGA Kikuo', 18)}}的其他基金

Development of psudobinary amorphous transparent conductive ooxide films and their applications totransparent electrodes
伪二元非晶透明导电氧化物薄膜的研制及其在透明电极中的应用
  • 批准号:
    16560276
  • 财政年份:
    2004
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Influences of Inserted Layers and Extra Impurities for Nucleation Enhancement on Film Properties of Transparent Conductive Oxides
成核增强插入层和额外杂质对透明导电氧化物薄膜性能的影响
  • 批准号:
    12650317
  • 财政年份:
    2000
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Study on the control of film properties by low energy ions in sputtering process
溅射过程中低能离子对薄膜性能控制的研究
  • 批准号:
    08650383
  • 财政年份:
    1996
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Development of film preparation equipment of facing target sputtering system with UV light radiation and estimation of obtained film properties
紫外光辐射对向靶溅射系统薄膜制备设备的开发及所得薄膜性能的评估
  • 批准号:
    04650269
  • 财政年份:
    1992
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)
Development of Planar Magnetron Sputtering System with Facing Targets
面向靶材平面磁控溅射系统的研制
  • 批准号:
    01550249
  • 财政年份:
    1989
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (C)

相似海外基金

Development of hydrogenated amorphous indium oxide-based transparent conductive oxide films with high mechanical flexibility
具有高机械柔性的氢化非晶氧化铟基透明导电氧化物薄膜的开发
  • 批准号:
    22K04932
  • 财政年份:
    2022
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
Experimental investigation on crystallization of In2O3 based amorphous transparent conductive oxide films
In2O3基非晶透明导电氧化物薄膜晶化实验研究
  • 批准号:
    16K04966
  • 财政年份:
    2016
  • 资助金额:
    $ 2.37万
  • 项目类别:
    Grant-in-Aid for Scientific Research (C)
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