Influences of Inserted Layers and Extra Impurities for Nucleation Enhancement on Film Properties of Transparent Conductive Oxides

成核增强插入层和额外杂质对透明导电氧化物薄膜性能的影响

• 批准号: 12650317
• 负责人: TOMINAGA Kikuo
• 金额: $ 2.37万
• 依托单位: The University of Tokushima
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-12650317/
• 关键词: ZnO:Al; transparent film; TCR Film; Transparent electrode; sputtering; sputtered film; Amorphous conductive film; ZnO : Al; amorphous conductive film; ZnO; 透明導電膜; スパッタリング; 不純物添加効果

We investigated mainly the following 3 thema : (1) What effect can we obtain by the insertion of ZnO layers into ZnO : Al film. (2) What effect can we find in mixing impurities such as Mn, Co and Cr into ZnO : A1 film under the codeposition of Zri. (3) What kind of film can we prepare under the simultaneous deposition of ZnO and In_2O_3.For the subject (1), extra addition of Zn was effective in decreasing the film resistivity of ZnO:Al. This was ascribed to enhanced nucleation in ZnO growth and the resultant increase of doping efficiency of Al donors, and the decrease of potential height at the grain boundaries of ZnO:Al micro crystals. The influence of Mn, Co and Cr impurities appeared as the increase of film resistivity of ZnO:Al. The grain size of micro crystal was improved by impurity adding, but the decrease of carrier concentration cancelled the increase in carrier mobility due to the increased grain size. The impurity oxidization at the grain boundaries influenced severely on the ZnO:Al film resisitivity. In (3), we deposited ternary compounds of ZnO-In2O3 system. Amorphous phase appeared in wide range of Zn/In ratio. Amorphous films showed lower resistivity than homologous crystallized phase film. The doping effect was noticed in the amorphous phase for Al. This result suggests the extrinsic doping in amorphous phase of ternary compounds.

我们主要研究了以下三个问题：（1）在ZnO：Al薄膜中插入ZnO层会产生什么样的效果。(2)在Zr 1共沉积的条件下，Mn、Co、Cr等杂质的掺入对ZnO：Al薄膜的生长有什么影响？(3)在ZnO和In_2O_3同时沉积的情况下，可以制备出什么样的薄膜？对于问题（1），Zn的加入可以有效地降低ZnO：Al薄膜的电阻率，这是由于Zn的加入增强了ZnO的成核作用，提高了Al施主的掺杂效率，降低了ZnO：Al微晶的晶界电位高度。Mn、Co、Cr杂质的影响表现为ZnO：Al薄膜电阻率的增加，杂质的加入改善了微晶的晶粒尺寸，但载流子浓度的降低抵消了晶粒尺寸的增加所带来的载流子迁移率的增加。晶界处的杂质氧化严重影响ZnO：Al薄膜的电阻率。在（3）中，我们沉积了ZnO-In_2 O_3三元系化合物。在较宽的Zn/In比范围内均出现非晶相。非晶薄膜的电阻率比同系晶化相薄膜的电阻率低。Al在非晶相中存在掺杂效应，这一结果表明三元化合物的非晶相中存在非本征掺杂。

项目成果

Kikuo Tominaga, Ichiro Nakabayashi et al.: "Effect of insertion of thin ZnO layer in transparent conductive ZnO : Al film"Thin Solid Films. 386. 267-270 (2001)

Kikuo Tominaga、Ichiro Nakabayashi 等人：“在透明导电 ZnO : Al 薄膜中插入薄 ZnO 层的效果”固体薄膜。

Kikuo Tominaga, Kazutaka Murayama, Ichiro Mori, Tomoko Ushiro, Toshihiro Moriga and Ichiro Nakabayashi: "Effect of insertion of thin ZnO layer in transparent conductive ZnO:Al film"Thin Solid Films. Vol.386. 267-270 (2001)

Kikuo Tominaga、Kazutaka Murayama、Ichiro Mori、Tomoko Ushiro、Toshihiro Moriga 和 Ichiro Nakabayashi：“在透明导电 ZnO:Al 薄膜中插入薄 ZnO 层的效果”固体薄膜。

Toshihiro Moriga, Akihiko Fukushima, Yozo Tomonari, Shoji Hosokawa, Kikuo Tominaga and Ichiro Nakabayashi: "Crystallization Process of Transparent Conductive Oxides ZnkIn2Ok+3"Journal of Synchrotron Radiation. Vol.8. 785-787 (2001)

Toshihiro Moriga、Akihiko Fukushima、Yozo Tomonari、Shoji Hosokawa、Kikuo Tominaga 和 Ichiro Nakabayashi：“透明导电氧化物 ZnkIn2Ok 3 的结晶过程”同步辐射杂志。

T.Ushiro: "Structural Variation of Thin Films Deposited from Zn_3In_2O_6 Target by RF-Sputtering"Material Research Bulletin. (2001)

T.Ushiro：“通过射频溅射从 Zn_3In_2O_6 靶上沉积薄膜的结构变化”材料研究通报。

Tomoko Ushiro, K.Tominaga, I.Nakabayashi et al.: "Structural Variation of thin films deposited from Zn_3In_2O_6 target by rf-sputtering"Material Research Bulletin. 36. 1075-1082 (2001)

Tomoko Ushiro、K.Tominaga、I.Nakabayashi 等人：“通过射频溅射从 Zn_3In_2O_6 靶沉积薄膜的结构变化”材料研究通报。