Influences of Inserted Layers and Extra Impurities for Nucleation Enhancement on Film Properties of Transparent Conductive Oxides

我们主要研究了以下三个问题：（1）在ZnO：Al薄膜中插入ZnO层会产生什么样的效果。(2)在Zr 1共沉积的条件下，Mn、Co、Cr等杂质的掺入对ZnO：Al薄膜的生长有什么影响？(3)在ZnO和In_2O_3同时沉积的情况下，可以制备出什么样的薄膜？对于问题（1），Zn的加入可以有效地降低ZnO：Al薄膜的电阻率，这是由于Zn的加入增强了ZnO的成核作用，提高了Al施主的掺杂效率，降低了ZnO：Al微晶的晶界电位高度。Mn、Co、Cr杂质的影响表现为ZnO：Al薄膜电阻率的增加，杂质的加入改善了微晶的晶粒尺寸，但载流子浓度的降低抵消了晶粒尺寸的增加所带来的载流子迁移率的增加。晶界处的杂质氧化严重影响ZnO：Al薄膜的电阻率。在（3）中，我们沉积了ZnO-In_2 O_3三元系化合物。在较宽的Zn/In比范围内均出现非晶相。非晶薄膜的电阻率比同系晶化相薄膜的电阻率低。Al在非晶相中存在掺杂效应，这一结果表明三元化合物的非晶相中存在非本征掺杂。

We investigated mainly the following 3 thema : (1) What effect can we obtain by the insertion of ZnO layers into ZnO : Al film. (2) What effect can we find in mixing impurities such as Mn, Co and Cr into ZnO : A1 film under the codeposition of Zri. (3) What kind of film can we prepare under the simultaneous deposition of ZnO and In_2O_3.For the subject (1), extra addition of Zn was effective in decreasing the film resistivity of ZnO:Al. This was ascribed to enhanced nucleation in ZnO growth and the resultant increase of doping efficiency of Al donors, and the decrease of potential height at the grain boundaries of ZnO:Al micro crystals. The influence of Mn, Co and Cr impurities appeared as the increase of film resistivity of ZnO:Al. The grain size of micro crystal was improved by impurity adding, but the decrease of carrier concentration cancelled the increase in carrier mobility due to the increased grain size. The impurity oxidization at the grain boundaries influenced severely on the ZnO:Al film resisitivity. In (3), we deposited ternary compounds of ZnO-In2O3 system. Amorphous phase appeared in wide range of Zn/In ratio. Amorphous films showed lower resistivity than homologous crystallized phase film. The doping effect was noticed in the amorphous phase for Al. This result suggests the extrinsic doping in amorphous phase of ternary compounds.