Development of film preparation equipment of facing target sputtering system with UV light radiation and estimation of obtained film properties

紫外光辐射对向靶溅射系统薄膜制备设备的开发及所得薄膜性能的评估

• 批准号: 04650269
• 负责人: TOMINAGA Kikuo
• 金额: $ 1.22万
• 依托单位: The University of Tokushima
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1992
• 资助国家: 日本
• 起止时间: 1992 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-04650269/
• 关键词: facing target sputtering system; Zinc oxide film; transparent Conductive films; Planar magnetron sputtering; UV radiation effect; film bombardment by energetic particles; ZnO : Al; 対向ターゲット式スパッタリング法; イオン衝撃

We developed planar magnetron sputtering system with facing targets and applied it to film preparations of conductive transparent films such as ZnO : Al and ITO.At the same time, effect of simultaneous radiation of UV light on film growth was investigated. It was demonstrated at first that film resistivity becomes small when the plasma exposure of substrate is decreased. We could obtain ZnO : Al films with fairly low resistivity and good transparency, especially at low gas pressures. (Proc. of IMCTF,San Diego, 1993) After this, we obtained a result that UV light radiation by Hglamp induces an decrease of film resistivity, which is due to an increase of about 50 %in carrier concentration. This was not so drastic effect, but there existed a fairly improvement of film crystallinity. Another important result was that the resistivity of ZnO : Al film was decreased under simultaneous sputtering of ZnO : Al and Zn targets. The supply of Zn atoms was controlled by changing the discharge current of Zn target. This result shows that ZnO : Al films prepared at normal conditions are Zn-deficient films. These Zn-defects act as acceptors, so the control of Zn defects is important in addition to Al dopant control in order to obtain low resistivity ZnO : Al films. (Proc.IMCTF at San Diego, 1994). For ITO films, we are now preparing by the same facing target system.Concerning film bombardment by energetic particles was also studied. (J.Vac. Sci. & Technol. 1994)

我们开发了面向靶材的平面磁控溅射系统，并将其应用于ZnO:Al、ITO等透明导电薄膜的薄膜制备，同时研究了紫外光同时照射对薄膜生长的影响。首先证明，当衬底的等离子体暴露减少时，膜电阻率变小。我们可以获得具有相当低电阻率和良好透明度的 ZnO:Al 薄膜，特别是在低气压下。 (Proc. of IMCTF, San Diego, 1993) 此后，我们得到了Hglamp 的紫外光辐射导致薄膜电阻率下降的结果，这是由于载流子浓度增加了约50%。这并不是那么剧烈的效果，但是薄膜结晶度有相当大的改善。另一个重要的结果是，在同时溅射ZnO:Al和Zn靶材的情况下，ZnO:Al薄膜的电阻率降低。通过改变Zn靶的放电电流来控制Zn原子的供给。该结果表明，在正常条件下制备的ZnO:Al膜是缺Zn膜。这些 Zn 缺陷充当受主，因此为了获得低电阻率 ZnO:Al 薄膜，除了 Al 掺杂剂控制之外，Zn 缺陷的控制也很重要。 （圣地亚哥 IMCTF 会议，1994 年）。对于ITO薄膜，我们现在正在通过相同的面向靶系统进行制备。还研究了高能粒子轰击薄膜。 （真空科学与技术杂志，1994 年）

项目成果

富永喜久雄: "Behavior of Energetic O^-Ions and O Atoms in Sputtering of Oxide Target" Proc,2nd.Int'l Symp.on ISSP'93,Tokyo. 183-188 (1993)

Kikuo Tominaga：“氧化物靶材溅射中高能 O^-离子和 O 原子的行为”Proc，2nd.Intl Symp.on ISSP93，东京。

富永喜久雄: "Simultaneous Measuremnts of Energetic O^-Ions and O Atoms in Sputtering of Zinc Oxide Taget" Jpn,J,Appl,Phys,. 32. 4745-4749 (1993)

Kikuo Tominaga：“氧化锌靶标溅射中高能 O^-离子和 O 原子的同时测量”Jpn,J,Appl,Phys, 32. 4745-4749 (1993)

富永喜久雄: "Behavior of Energetic O- Ions and O atoms in Sputtering of Oxide Target" Proc.2nd Int'l Symp.on ISSP'93,Tokyo. 183-188 (1993)

Kikuo Tominaga：“氧化物靶溅射中高能 O 离子和 O 原子的行为”Proc.2nd Intl Symp.on ISSP93，东京 183-188 (1993)。

Kikuo Tominaga: "Energetic Particles in the Sputtering of an Indium-Tin Oxide Target" J.Vac.Sci.& Technol.A12 (in press). (1994)

Kikuo Tominaga：“氧化铟锡靶材溅射中的高能粒子”J.Vac.Sci。

Kikuo Tominaga :"Energetic O^- Ions and OAtoms in Planar Magnetron Sputtering of ZnO Target" Jpn.J.Appl.Phys.32. 4131-4135 (1993)

Kikuo Tominaga：“ZnO 靶平面磁控管溅射中的高能 O^- 离子和 OAtom”Jpn.J.Appl.Phys.32。