Development of film preparation equipment of facing target sputtering system with UV light radiation and estimation of obtained film properties

研制了面向目标的平面磁控溅射系统，并将其应用于ZnO: Al和ITO等导电透明薄膜的制备。同时，研究了紫外光同时照射对薄膜生长的影响。首先证明了薄膜电阻率随基底等离子体曝光量的减小而减小。我们可以获得具有相当低电阻率和良好透明度的ZnO: Al薄膜，特别是在低气压下。（Proc. of IMCTF,San Diego, 1993）在此之后，我们得到了Hglamp紫外线辐射引起薄膜电阻率降低的结果，这是由于载流子浓度增加了约50%。虽然效果不明显，但薄膜的结晶度有了较大的提高。另一个重要的结果是，同时溅射ZnO: Al和Zn靶材时，ZnO: Al薄膜的电阻率降低。通过改变锌靶的放电电流来控制锌原子的供给。结果表明，在正常条件下制备的ZnO: Al薄膜是缺锌薄膜。这些锌缺陷作为受体，因此为了获得低电阻率的ZnO: Al薄膜，除了控制Al掺杂物外，控制Zn缺陷也很重要。（1994年在圣地亚哥举行的imctf会议）。对于ITO薄膜，我们正在用相同的面靶系统进行准备。对高能粒子轰击薄膜也进行了研究。(J.Vac。科学。& technology . 1994)

We developed planar magnetron sputtering system with facing targets and applied it to film preparations of conductive transparent films such as ZnO : Al and ITO.At the same time, effect of simultaneous radiation of UV light on film growth was investigated. It was demonstrated at first that film resistivity becomes small when the plasma exposure of substrate is decreased. We could obtain ZnO : Al films with fairly low resistivity and good transparency, especially at low gas pressures. (Proc. of IMCTF,San Diego, 1993) After this, we obtained a result that UV light radiation by Hglamp induces an decrease of film resistivity, which is due to an increase of about 50 %in carrier concentration. This was not so drastic effect, but there existed a fairly improvement of film crystallinity. Another important result was that the resistivity of ZnO : Al film was decreased under simultaneous sputtering of ZnO : Al and Zn targets. The supply of Zn atoms was controlled by changing the discharge current of Zn target. This result shows that ZnO : Al films prepared at normal conditions are Zn-deficient films. These Zn-defects act as acceptors, so the control of Zn defects is important in addition to Al dopant control in order to obtain low resistivity ZnO : Al films. (Proc.IMCTF at San Diego, 1994). For ITO films, we are now preparing by the same facing target system.Concerning film bombardment by energetic particles was also studied. (J.Vac. Sci. & Technol. 1994)