The role of defects in the magneto-ionic control of exchange-bias thin films

缺陷在交换偏压薄膜磁离子控制中的作用

• 批准号: 499361641
• 负责人: Professor Dr. Arno Ehresmann
• 金额: --
• 依托单位: Professur Elektrochemische Sensorik und Energiespeicherung
• 依托单位国家: 德国
• 项目类别: Research Grants
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/499361641?language=en
• 关键词: role; defects; magneto; ionic; control

The exchange bias is an important interface-related effect in modern thin-film magnetism. It offers an elegant way to control the remnant magnetization direction of ferromagnetic layers in magnetic memories, sensors, spintronics and magnetophoretic devices. Especially, artificial magnetic domain patterns with tailored stray field landscapes can be created in in-plane exchange bias films by the controlled introduction of defects and energy via light-ion bombardment.Thus, light ion bombardment presents a versatile method to modify magnetic anisotropies, but, due to the influence of accumulating defects in successive bombardment steps a reversible modification of anisotropies cannot be achieved by this technology. The reversible electric control of interface-related magnetic properties by the insertion and removal of ions in magnetic layers via an electrochemical approach (magneto-ionic control) is an emerging concept. However, kinetics are limited by the ion transport in the material. Even though defects are expected to play a pivotal beneficial role as ion transport paths, the impact of defects on the magneto-ionic switching has not been studied systematically yet. In the proposed project, the combination of defect-modified exchange bias films and magneto-ionic interface control will be studied as a novel approach towards (i) a reversible programming of artificial magnetic domains in exchange bias systems and (ii) an increase in the switching speed and efficiency of magneto-ionic switching. The fundamental understanding of the role of defects for magneto-ionic switching will open up new avenues toward the tuning of functional interfaces in general. For instance, the gained knowledge will also pave a way to new design options for other interface-related magnetic phenomena such as the Dzyaloshinskii–Moriya-interaction or spin orbit torques.

交换偏置是现代薄膜磁学中一个重要的界面效应。它提供了一种优雅的方式来控制磁性存储器，传感器，自旋电子学和磁泳器件中的铁磁层的剩余磁化方向。特别是，人工磁畴图案定制杂散场景观可以创建在平面内的交换偏置薄膜通过控制引入的缺陷和能量通过轻离子bombarding.Thus，轻离子轰击提出了一种通用的方法来修改磁各向异性，但由于在连续的轰击步骤中积累的缺陷的影响，可逆的修改各向异性不能通过这种技术实现。通过电化学方法（磁离子控制）在磁性层中插入和去除离子来可逆地电控制与界面相关的磁性是一个新兴的概念。然而，动力学受到材料中离子传输的限制。尽管缺陷被认为是离子输运的重要途径，但缺陷对磁离子开关的影响还没有得到系统的研究。在拟议的项目中，将研究缺陷改性交换偏置膜和磁离子界面控制的组合，作为一种新的方法，（i）交换偏置系统中人工磁畴的可逆编程和（ii）磁离子开关的开关速度和效率的增加。磁离子开关的缺陷的作用的基本理解将开辟新的途径，对功能界面的调整一般。例如，所获得的知识也将为其他与界面相关的磁现象（如Dzyaloshinskiii-Moriya相互作用或自旋轨道扭矩）的新设计选择铺平道路。