Research for Terahertz Quantum Cascade Lasers using Nitride-based Semiconductors

太赫兹量子级联激光器（THz-QCL）是小尺寸、窄线宽、连续波和高功率太赫兹激光光源，对许多应用都很有吸引力。我们通过采用纵向光学（LO）声子减少方案开发了 GaN/InAlGaN THz-QCL，以实现未开发的频率，即。例如，5-12 太赫兹。我们通过电流注入首次观察到氮化物基 GaN/AlGaN 半导体超晶格 (SL) 子带间能级的自发发射。我们通过使用 QCL 结构发射的偏振依赖性证实了太赫兹自发发射的起源。

Terahertz quantum-cascade lasers(THz-QCLs) are small-size, narrow line-width, cw and high-power THz laser light sources and are attractive for a lot of applications. We have developed GaN/InAlGaN THz-QCLs by employing a longitudinal-optical(LO) phonon depopulation scheme, for the purpose of achieving undeveloped frequencies, i. e., 5-12 THz. We achieved first observation of spontaneous emission from nitride-based GaN/AlGaN semiconductor superlattices(SLs) intersubband levels by current injection. We confirmed the origin of the THz spontaneous emission by using polarization dependence of emission from the QCL structures.