Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications
Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications
批准号:
13355001
负责人:
HIRAYAMA Hideki
金额:
$33.78万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2003
中文摘要
高强度紫外(UV)激光二极管(LD)和发光二极管(LED)在高效照明、生物化学和医疗领域或高密度光存储的应用中的需求正在增加。GaN和III族氮化物化合物半导体作为用于实现UV-LD和LED的候选材料吸引了相当大的关注。然而,由于难以获得高Al含量的p型AlGaN,因此难以使用氮化物基材料实现高效率的深UV-LED或LD。本工作的目的是利用交替共掺杂技术实现宽带隙p型AlGaN的高空穴密度,并开发工作在250-350 nm波长范围内的高效率深紫外LED或LD。首先,我们证明了利用交替供气方法制备Si/Mg共掺杂GaN外延膜的高空穴密度。通过在Mg掺杂GaN中引入Si掺杂浓度,我们获得了空穴密度的显著增加。然后,我们采用交替供气的方法制备了高Al含量的Mg掺杂AlGaN。采用交替供气的方法,在极高Al含量(46-53%)的Mg掺杂AlGaN中获得了空穴电导率。我们还观察到通过在AlGaN中引入Si/Mg共掺杂降低了激活能。采用交替供气法生长高Al含量(53%)p型AlGaN,制备了310 nm波段InAlGaN基深紫外发光二极管(LED)。在308-314 nm波长范围内,我们已经实现了亚毫瓦级的RT脉冲输出功率。
英文摘要
The demands for high-intensity ultraviolet (UV) laser diodes (LDs) and light-emitting diodes (LEDs) are increasing for the application of high-efficiency lighting, biochemical and medical fields or high-density optical storages. GaN and III-nitride compound semiconductors are attracting considerable attention as candidate materials for the realization of UV-LDs and LEDs. However, it is difficult to achieve high-efficiency deep UV-LEDs or LDs using nitride-based materials because of the difficulty in obtaining High-Al-content p-type AlGaN. The purpose of this work is to achieve high-hole-density for wide-bandgap p-type AlGaN using an alternating co-doping technique, and to develop high-efficiency deep UV LEDs or LDs operating in the wavelength between 250-350 nm.First, we have demonstrated high-hole-density for Si/Mg co-doped GaN epitaxial filmes fabricating using alternating gas supply method. We obtained significant increase of hole density by introducing Si-doping concentration in Mg-doped GaN. Then, we fabricated high-Al-content Mg-doped AlGaN using alternating gas supply method. We obtained hole-conductivity for extremely high Al content (46-53%) Mg-doped AlGaN by using the alternating gas supply method. We have also observed the reduction of activation energy by introducing Si/Mg co-doping into AlGaN. We fabricated 310 nm-band InAlGaN-based deep UV light-emitting diodes (LEDs) with high-Al-content (53%) p-type AlGaN grown with the alternating gas supple method. We have achieved sub-milliwatt output power under RT pulsed operation in the wavelength between 308-314 nm.
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Quaternary InAlGaN based deep UV LED with high-Al-content P-type AlGaN
基于四元 InAlGaN 的高 Al 含量 P 型 AlGaN 深紫外 LED
DOI:
--
发表时间:
2004
期刊:
Proc.SPIE Int.Soc.Opt.Eng. 5359
影响因子:
--
作者:
[T.Asano, B, -S.Song, Y.Akahane and S.Noda, Y.Kono, H.Hirayama]
通讯作者:
H.Hirayama
Growth and Annealing Condition of high Al Content p-type AlGaN for deep UV-LEDs
用于深紫外 LED 的高铝含量 p 型 AlGaN 的生长和退火条件
DOI:
--
发表时间:
2004
期刊:
Phys.Stat.Sol.(c) 201
影响因子:
--
作者:
[T.Obata]
通讯作者:
T.Obata
MBE growth and properties of GaCrN, H.Hashimoto
GaCrN 的 MBE 生长和特性,H.Hashimoto
DOI:
--
发表时间:
2003
期刊:
J.Crystal Growth 251
影响因子:
--
作者:
[Y.K.Xhou]
通讯作者:
Y.K.Xhou
Materials Design for Semiconductor Spintronics by Ab initio Electronic-structure Calculation (Invited)
从头算电子结构计算的半导体自旋电子学材料设计(特邀)
DOI:
--
发表时间:
2003
期刊:
Physica B327
影响因子:
--
作者:
[H.Katayama-Yoshida, K.Sato]
通讯作者:
K.Sato
Fabrication of Low Threating Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices
使用高硅掺杂 AlGaN 超晶格在 SiC 上制造低威胁位错密度 AlGaN 缓冲器
DOI:
--
发表时间:
2002
期刊:
Appl.Phys.Lett. 80
影响因子:
--
作者:
[H.Hirayama, H.Hirayama]
通讯作者:
H.Hirayama
共 64 条
Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substrates
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批准号:24246010
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$30.12万
-
财政年份:2012
-
负责人:HIRAYAMA Hideki
-
依托单位:
Research for Terahertz Quantum Cascade Lasers using Nitride-based Semiconductors
-
批准号:21246005
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$29.87万
-
财政年份:2009
-
负责人:HIRAYAMA Hideki
-
依托单位:
Research for Far-infrared-Terahertz Quantum Cascade Lasers using Nitride-based Semiconductors
-
批准号:19206004
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$31.37万
-
财政年份:2007
-
负责人:HIRAYAMA Hideki
-
依托单位:
Development of ultraviolet bright light-emitting diodes using quaternary InAlGaN
-
批准号:14205006
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$34.11万
-
财政年份:2002
-
负责人:HIRAYAMA Hideki
-
依托单位:
海外基金