Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications
Fabrication of high hole density p-type nitride semiconductor film crystal using alternating xrdoping techniques and its applications
批准号:
13355001
负责人:
HIRAYAMA Hideki
金额:
$33.78万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2001
资助国家:
日本
项目状态:
已结题
起止时间:
2001 至 2003
中文摘要
在高效率照明、生化和医疗领域或高密度光存储领域,对高强度紫外(UV)激光二极管(LD)和发光二极管(LED)的需求越来越大。GaN和III-氮化物化合物半导体作为实现UV-LDS和LED的候选材料引起了人们极大的关注。然而,由于难以获得高Al含量的p型AlGaN,使用氮化物基材料很难实现高效的深紫外光LED或LDS。本工作的目的是利用交替共掺杂技术实现宽禁带p型AlGaN的高空穴密度,并开发工作在250-350 nm之间的高效深紫外光LED或LD。首先,我们证明了采用交流供气方法制备的Si/Mg共掺杂GaN外延膜具有高的空穴密度。在掺镁GaN中引入Si掺杂浓度可以显著提高空穴密度。然后,我们采用交流供气的方法制备了高Al含量的掺镁AlGaN。对于Al含量极高(46-53%)的掺镁AlGaN,我们采用交替供气的方法获得了空穴电导。我们还观察到了在AlGaN中引入Si/Mg共掺杂后激活能的降低。采用交流气体辅助生长的方法制备了310 nm波段的InAlGaN基高Al含量(53%)p型AlGaN深紫外发光二极管。在308-314 nm波长范围内,实现了RT脉冲下亚毫瓦级的输出功率。
英文摘要
The demands for high-intensity ultraviolet (UV) laser diodes (LDs) and light-emitting diodes (LEDs) are increasing for the application of high-efficiency lighting, biochemical and medical fields or high-density optical storages. GaN and III-nitride compound semiconductors are attracting considerable attention as candidate materials for the realization of UV-LDs and LEDs. However, it is difficult to achieve high-efficiency deep UV-LEDs or LDs using nitride-based materials because of the difficulty in obtaining High-Al-content p-type AlGaN. The purpose of this work is to achieve high-hole-density for wide-bandgap p-type AlGaN using an alternating co-doping technique, and to develop high-efficiency deep UV LEDs or LDs operating in the wavelength between 250-350 nm.First, we have demonstrated high-hole-density for Si/Mg co-doped GaN epitaxial filmes fabricating using alternating gas supply method. We obtained significant increase of hole density by introducing Si-doping concentration in Mg-doped GaN. Then, we fabricated high-Al-content Mg-doped AlGaN using alternating gas supply method. We obtained hole-conductivity for extremely high Al content (46-53%) Mg-doped AlGaN by using the alternating gas supply method. We have also observed the reduction of activation energy by introducing Si/Mg co-doping into AlGaN. We fabricated 310 nm-band InAlGaN-based deep UV light-emitting diodes (LEDs) with high-Al-content (53%) p-type AlGaN grown with the alternating gas supple method. We have achieved sub-milliwatt output power under RT pulsed operation in the wavelength between 308-314 nm.
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Quaternary InAlGaN based deep UV LED with high-Al-content P-type AlGaN
基于四元 InAlGaN 的高 Al 含量 P 型 AlGaN 深紫外 LED
DOI:
--
发表时间:
2004
期刊:
Proc.SPIE Int.Soc.Opt.Eng. 5359
影响因子:
--
作者:
[T.Asano, B, -S.Song, Y.Akahane and S.Noda, Y.Kono, H.Hirayama]
通讯作者:
H.Hirayama
Growth and Annealing Condition of high Al Content p-type AlGaN for deep UV-LEDs
用于深紫外 LED 的高铝含量 p 型 AlGaN 的生长和退火条件
DOI:
--
发表时间:
2004
期刊:
Phys.Stat.Sol.(c) 201
影响因子:
--
作者:
[T.Obata]
通讯作者:
T.Obata
MBE growth and properties of GaCrN, H.Hashimoto
GaCrN 的 MBE 生长和特性,H.Hashimoto
DOI:
--
发表时间:
2003
期刊:
J.Crystal Growth 251
影响因子:
--
作者:
[Y.K.Xhou]
通讯作者:
Y.K.Xhou
Materials Design for Semiconductor Spintronics by Ab initio Electronic-structure Calculation (Invited)
从头算电子结构计算的半导体自旋电子学材料设计(特邀)
DOI:
--
发表时间:
2003
期刊:
Physica B327
影响因子:
--
作者:
[H.Katayama-Yoshida, K.Sato]
通讯作者:
K.Sato
Fabrication of Low Threating Dislocation Density AlGaN Buffer on SiC using Highly Si-doped AlGaN Superlattices
使用高硅掺杂 AlGaN 超晶格在 SiC 上制造低威胁位错密度 AlGaN 缓冲器
DOI:
--
发表时间:
2002
期刊:
Appl.Phys.Lett. 80
影响因子:
--
作者:
[H.Hirayama, H.Hirayama]
通讯作者:
H.Hirayama
共 64 条
Research on vertical-type large-area high-power deep-UV LEDs fabricated on Si substrates
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批准号:24246010
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$30.12万
-
财政年份:2012
-
负责人:HIRAYAMA Hideki
-
依托单位:
Research for Terahertz Quantum Cascade Lasers using Nitride-based Semiconductors
-
批准号:21246005
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$29.87万
-
财政年份:2009
-
负责人:HIRAYAMA Hideki
-
依托单位:
Research for Far-infrared-Terahertz Quantum Cascade Lasers using Nitride-based Semiconductors
-
批准号:19206004
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$31.37万
-
财政年份:2007
-
负责人:HIRAYAMA Hideki
-
依托单位:
Development of ultraviolet bright light-emitting diodes using quaternary InAlGaN
-
批准号:14205006
-
项目类别:Grant-in-Aid for Scientific Research (A)
-
资助金额:$34.11万
-
财政年份:2002
-
负责人:HIRAYAMA Hideki
-
依托单位:
海外基金