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Development of ultraviolet bright light-emitting diodes using quaternary InAlGaN

使用四元InAlGaN开发紫外光亮发光二极管

基本信息

批准号：
14205006
负责人：
HIRAYAMA Hideki
金额：
$ 34.11万
依托单位：
RIKEN
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
2002
资助国家：
日本
起止时间：
2002 至 2004
项目状态：
已结题

项目摘要

The demands for high-intensity ultraviolet(UV) laser diodes(LDs) and light-emitting diodes(LEDs) are increasing in the fields of high-density optical storage or high-efficiency lighting or biochemical and medical fields. GaN and III-nitride compound semiconductors are attracting considerable attention as candidate materials for the realization of UV-LDs and LEDs. The purpose of our work is to develop high-intensity UV-LEDs or LDs operating in the 250-350 nm wavelength range.We have demonstrated high-efficiency UV emission from quaternary InAlGaN-based quantum wells(QWs) in the wavelength range between 290-375 nm at room temperature(RT) using the In-segregation effect. Emission fluctuations in the submicron region due to In-segregation were clearly observed for quaternary InAlGaN epitaxial layers. An internal quantum efficiency as high as 15% was estimated for a quaternary InAlGaN-based single quantum well(SQW) at RT. Such high efficiency UV emission can even be obtained on high threading-dislocation density buffers. We fabricated 310 nm-band deep UV light-emitting diodes(LEDs) with quaternary InAlGaN active regions. We achieved sub-milliwatt output power under RT pulsed operation for 308-314 nm LEDs. We also demonstrated a high output power of 7.4 mW from a 352 nm quaternary InAlGaN-based LED fabricated on a GaN substrate under RT CW operation. The maximum external quantum efficiency(EQE) of the 352 nm InAlGaN-based LED was 1.1%, which is the highest EQE ever obtained for 350 nm-band UV LEDs with top-emission geometry. From these results, the advantages of the use of quaternary InAlGaN for 300-350nm-band UV emitters was revealed.

在高密度光存储或高效照明或生物化学和医疗领域中，对高强度紫外（UV）激光二极管（LD）和发光二极管（LED）的需求正在增加。GaN和III族氮化物化合物半导体作为用于实现UV-LD和LED的候选材料吸引了相当大的关注。我们的工作目的是开发工作在250-350 nm波长范围内的高强度UV-LED或LD，我们已经证明了四元InAlGaN基量子威尔斯阱（QW）在室温（RT）下在290-375 nm波长范围内的高效率UV发射。四元InAlGaN外延层的亚微米区域中的发射波动，由于在偏析清楚地观察到。四元InAlGaN基单量子阱（SQW）在室温下的内量子效率高达15%。这种高效率的紫外光发射甚至可以在高线位错密度缓冲层上获得。我们制作了310 nm波段深紫外发光二极管（LED）与四元InAlGaN有源区。我们在RT脉冲操作下实现了308-314 nm LED的亚毫瓦输出功率。我们还展示了7.4 mW的高输出功率，从352 nm四元InAlGaN基LED在GaN衬底上制作RT CW操作下。352 nm InAlGaN基LED的最大外量子效率（EQE）为1.1%，这是具有顶部发射几何结构的350 nm波段UV LED所获得的最高EQE。从这些结果中，使用四元InAlGaN的300- 350 nm波段的紫外发射器的优点被揭示。