High efficiency chemical thinning and dicing process for SiC semiconductor substrate

碳化硅（SiC）是一种很有前途的节能功率器件半导体材料。然而，由于其高硬度和脆性，很少有传统的加工方法可以有效地处理这种材料。等离子体化学蒸发加工（PCVM）技术，这是等离子体刻蚀使用大气压等离子体，已被认为是SiC衬底的减薄和切割过程中使用新开发的PCVM设备。作为减薄实验的结果，在整个2英寸4 H-SiC（0001）晶片上获得500 nm/min的最大去除速率。基础切削试验结果表明，在最大切削速度大于0.01 mm/min，槽宽小于0.2 mm的条件下，获得了较好的切削效果。

Silicon carbide (SiC) is a promising semiconductor material for energy-saving power devices. However, because of its high hardness and brittleness, few conventional machining methods can handle this material efficiently. A plasma chemical vaporization machining (PCVM) technique, which is plasma etching using atmospheric-pressure plasma, has been considered for thinning and dicing process of SiC substrates by using the newly-developed PCVM apparatus. As a result of thinning experiments, a maximum removal rate of 500 nm/min was obtained over the entire 2-inch 4H-SiC (0001) wafer. And as a result of basic cutting experiments, a maximum removal rate of more than 0.01 mm/min with a groove width of less than 0.2 mm was successfully achieved.