Creation of Nano-device/CMOS Merged Three Dimensional Integrated Circuits Using Shape-Functionalized Micro-interconnect
Creation of Nano-device/CMOS Merged Three Dimensional Integrated Circuits Using Shape-Functionalized Micro-interconnect
批准号:
21246061
负责人:
ASANO Tanemasa
金额:
$30.37万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2012
中文摘要
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英文摘要
Bonding mechanism of cone-shaped microbump electrode, which was invented by the leader of this project research, has been investigated. Application of the mechanism to development of three dimensional integration of semiconductor circuits has also been investigated. This project achieved room temperature bonding of high density micro interconnect, which was not able to carry out using existing technology. The developed technology has been applied to integration of heterogeneous integration on silicon. As anexample, a high-resolution near infrared image sensor has been fabricated using the developed technology.
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Compliant Bump Technology for Back-Side Illuminated CMOS Image Sensor
适用于背面照明 CMOS 图像传感器的兼容凸块技术
DOI:
--
发表时间:
2009
期刊:
Proc. 2009 Int. Electronic Components and Techn ology Conference"
影响因子:
--
作者:
[T.Asano, N.Watanabe, I.Tsunoda, Y.Kimiya, K.Fukunaga, M.Handa, H.Arao, Y.Yamaji, M.Aoyagi, T.Higashimachi, K.Tanaka, T.Takao, K.Matsumura, A.Ikeda, Y.Kuroki, T.Tsurushima]
通讯作者:
T.Tsurushima
Room Temperature Microjoining of qVGA Class Area-Bump Array Using Cone Bump
使用锥形凸块的 qVGA 级区域凸块阵列的室温微连接
DOI:
--
发表时间:
2012
期刊:
影响因子:
--
作者:
[T. Shuto, K. Iwanabe, L. Qiu, and T. Asano]
通讯作者:
and T. Asano
Selective Heating of Microbumps Using Microwave for Low Strain Heterogeneous Chip Stack Integration
使用微波选择性加热微凸块以实现低应变异质芯片堆栈集成
DOI:
--
发表时间:
2011
期刊:
Extended Abstracts of the 2011 International Conference on Solid State Devices and Materials
影响因子:
--
作者:
[L.Qiu, T.Asano]
通讯作者:
T.Asano
A Liquid-Phase Bonding for High Density Chip-Stack Interconnection
用于高密度芯片堆叠互连的液相键合
DOI:
--
发表时间:
2010
期刊:
Proceedings of the 2010 International Meeting for Future of Electron Devices, Kansai
影响因子:
--
作者:
[L.Qiu, N.Watanabe, T.Asano]
通讯作者:
T.Asano
Room-Temperature Microjoining of LSI Chips on Poly(ethylene naphthalate) Film Using Mechanical Caulking of Au Cone Bump
使用金锥体凸点机械填缝将 LSI 芯片室温微接合在聚萘二甲酸乙二醇酯薄膜上
DOI:
10.1143/jjap.51.04db04
发表时间:
2012
期刊:
Jpn. J. Appl. Phys
影响因子:
--
作者:
[T. Shuto, N. Watanabe, A. Ikeda, and T. Asano]
通讯作者:
and T. Asano
共 61 条
Study on high-speed doping mechanism of wet laser processing
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批准号:25289105
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项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.32万
-
财政年份:2013
-
负责人:ASANO Tanemasa
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依托单位:
Study of the Formation of Single-Crystal Silicon Thin-Film Using Nanoimprint Seeding
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批准号:18360025
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.61万
-
财政年份:2006
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负责人:ASANO Tanemasa
-
依托单位:
Position and Orientation Control of Si Thin-Film Crystal Grain Using Nano-Imprint Technology
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批准号:15360022
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$8.64万
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财政年份:2003
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负责人:ASANO Tanemasa
-
依托单位:
Thin-Film-Transistor and Its Layr-Structured Circuitry for Signal Prosessing Based on Probability
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批准号:08650406
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.47万
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财政年份:1996
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负责人:ASANO Tanemasa
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依托单位:
Investigation of Electron-Wave Interference Vacuum Microelectronics Devices
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批准号:05555010
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项目类别:Grant-in-Aid for Developmental Scientific Research (B)
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资助金额:$3.2万
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财政年份:1993
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负责人:ASANO Tanemasa
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依托单位:
Fundamental Research of Single-Atomic Memories
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批准号:03452083
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$1.28万
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财政年份:1991
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负责人:ASANO Tanemasa
-
依托单位: