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Thin-Film-Transistor and Its Layr-Structured Circuitry for Signal Prosessing Based on Probability

Thin-Film-Transistor and Its Layr-Structured Circuitry for Signal Prosessing Based on Probability
基于概率的薄膜晶体管及其层状信号处理电路
批准号:
08650406
负责人:
ASANO Tanemasa
金额:
$1.47万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997

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中文摘要
翻译
薄膜晶体管张力学从材料制备和设备结构的视点点进行了调查。多晶体硅和场效应晶体管的薄薄膜已被调查。在订购以提高薄膜晶体管的信号处理速度时,它是值得设计和制造每个晶体管在单个聚晶体管颗粒中的电路。如果要确定这一理想的情况,就必须控制水晶的位置和水晶颗粒的生长速度。我们找到了(1)增强非正硅的核速率,(2)通过irradiation of amorphous silicon with ions of innert species的颗粒生长速率。使用这些现象,我们已经演示了对多晶体硅薄膜的水晶化位点的控制。在多晶体管硅薄膜上制备了薄膜晶体管晶体管硅薄膜,使用上面的核控制方法已经被证实,以显示出大约3次的操作速度比那些制造了传统方法。它已经被证明了,使用核控制方法,薄膜晶体管可以收缩到0.6毫米和电路,由这些晶体管可以运行。一个测试振荡电路已经设计和制造,在5V的供应电压范围内运行在几个MHz的频率范围内。在现场可编程模拟和数字ICs中的应用,以实现脉冲信号处理电路已经被调查。它已经找到了模拟/数字混合信号电路,可以通过将模拟信号转换为现场可编程模拟阵列(FPAAs)中的数字信号,并与现场可编程门阵列(FPGA)连接。使用FPAA和FPGA、电压控制振荡器、ADC、DAC和计数器已经实现和实现方法已经稳定。
英文摘要
Thin-film-transistor tenhnology has investigated from the view points of material preparation and device structures. Thin films of polycrystaline silicon and field effect transistors have been investigated.・In order to enhance the signal processing speed of thin-film-transistor cricuits, it is desirable to design and fabricate each transistor in a circuit in a single polycrystalline grain. In order to realize this ideal situation, it is necessary to control the position of crystal and the growth speed of the crystal grains. We have found (1) enhancement of nucleation rate of amorphous silicon, and (2) reduction of the grain growth rate by irradiation of amorphous silicon with ions of innert species. Using these phenomena, we have demonstarated the control of crystallization sites of polycrystalline silicon films.・Thin-films transistors fabricated on the polycrystalline silicon film prepared using the above nucleation-controlled method have been verified to show about 3 times higher operation speed than those fabricated using the conventional method.・It has been demonstrated that, using the nucleation control method, thin-film transistors can be shrinked down to 0.6 mum and circuits composed of these transistors can operate. A test oscilation circuit has been designed and fabricated, which operated at the frequency range of several MHz at supply voltage of 5 V.Application of field programmable analog and digital ICs to implementation of pulse signal processing circuits has been investigated.・It has been found that analog/digital mixed signal circuits can be realized by converting analog signals to digitl signals in field progarammable analog arrays (FPAAs) and jointing with field programmable gate arrays (FPGAs).・Using FPAA and FPGA,voltage controlled oscilator, ADC,DAC,and countors has been implemented and impletation method has been established.
期刊论文(42)
专著(0)
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会议论文
K.Makihira and T.Asano: "Improving the performance of double-gate thin-film-transistors using gate offset structru" Dig.Tech.Papers 1997 Int.Workshop on Active Matrix Liquid Crystal Displays,. 191-194 (1997)
K.Makihira 和 T.Asano:“使用栅极偏移结构提高双栅极薄膜晶体管的性能”Dig.Tech.Papers 1997 Int.Workshop on Active Matrix Liquid Crystal Displays。
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K.Arita, M.Akamatsu, and T.Asano: "Supressing plasma induced degradation of gate oxide by using silicon-on-insulator structures" Ext.Abs.1997 Int.Conf.Solid State Devices and Materials. 146-147 (1997)
K.Arita、M.Akamatsu 和 T.Asano:“通过使用绝缘体上硅结构抑制等离子体引起的栅极氧化物退化”Ext.Abs.1997 Int.Conf.Solid State Devices and Materials。
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T.Asano, D.Sasaguri, E.Shibata, and K.Higa: "Ion beam modification of a photoresist and its application to field emitters" Jpn.J.Appl.Phys. 36・12B. 7749-7753 (1997)
T.Asano、D.Sasaguri、E.Shibata 和 K.Higa:“光致抗蚀剂的离子束改性及其在场发射器中的应用”Jpn.J.Appl.Phys 36・12B 7749-7753 (1997)。
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T.Asano, K.Aoto, Y.Okada: "Enhanced Solid-Phase Crystallization of Amorphous Si by Plasma Treatment Using Reactive Ion Etching" Jpn.J.Appl.Phys.36・3B. 428-432 (1997)
T.Asano、K.Aoto、Y.Okada:“通过使用反应离子蚀刻的等离子体处理增强非晶硅的固相结晶”Jpn.J.Appl.Phys.36・3B(1997)。
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