Investigation of Electron-Wave Interference Vacuum Microelectronics Devices

电子波干涉真空微电子器件研究

• 批准号: 05555010
• 负责人: ASANO Tanemasa
• 金额: $ 3.2万
• 依托单位: Kyushu Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1993
• 资助国家: 日本
• 起止时间: 1993 至 1994
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-05555010/
• 关键词: electron-wave interference; vacuum microelectronics; micron-size electron emitter; field emission; diamond; 電子干波渉効果; 微小冷陰極; 微細加工技術

This project has been aiming at realization of a new electron-wave interference devices by using vacuum microelectronics technology. During the term of project, following fundamentals have been revealed.(1) A new three terminal electron-wave interference device, which is composed of micron-size field electron emitter, deflection electrodes, and a collector electrode, has been proposed. Simulation base on quantum physics has been revealed that the device performing a very large logic swing can be prepared with 100nm-level fabrication technology which is available today, and that the device operates at voltages as low as the thermal voltage.(2) A new self-aligned process technology, which utilizes the control of the shadowing effect in the sputter deposition of films, has been developed for fabricating silicon micro-emitter. By using this process, it became possible to operates the micro-emitter at voltages as low as about ten volts.(3) It has been found that diamond synthesized on silicon is very promissing as a new material for the micro-field emitter. Effects of doping, thermal treatments, plasma treatments have been revealed. It has also been shown that ion milling is useful for fabrication of diamond field emitters.

本课题旨在利用真空微电子技术实现一种新型的电子波干涉器件。在项目期间，以下基本面已被揭示。(1)本文提出了一种新的三端电子波干涉装置，它由微米级场电子发射极、偏转电极和集电极组成。基于量子物理的模拟已经揭示，执行非常大的逻辑摆幅的器件可以用今天可用的100nm级制造技术来制备，并且该器件在与热电压一样低的电压下工作。(2)开发了一种新的自对准工艺技术，该技术利用溅射沉积薄膜中的阴影效应控制来制造硅微发射极。通过使用这种工艺，可以在低至约10伏的电压下操作微发射器。(3)研究发现，硅衬底上合成的金刚石是一种很有前途的微场致发射材料。掺杂，热处理，等离子体处理的效果已经被揭示。它也已被证明，离子铣削是有用的制造金刚石场发射体。

项目成果

S.Katsumata,Y.Oobuchi and T.Asano: "Patterning of CVD diamond films by seeding and their field emission properties" Diamond and Related Materials. 3. 1296-1300 (1994)

S.Katsumata、Y.Oobuchi 和 T.Asano：“通过晶种形成 CVD 金刚石薄膜图案及其场发射特性”《金刚石和相关材料》。

Katsuya Higa, Tanemasa Asano, and Tatsuro Miyasato: "Variation of phtoluminescence properties of stain-etched silicon with crytallinity of starting polycrystalline silicon films" Jpn.J.Appl.Phys. Vol.33. L1733-L1736 (1994)

Katsuya Higa、Tanemasa Asano 和 Tatsuro Miyasato：“染色蚀刻硅的光致发光特性与起始多晶硅薄膜的结晶度的变化”Jpn.J.Appl.Phys。

T.Asano,Y.Oobuchi and S.Katsumata: "Field emission from ion-milled diamond films on Si" Journal fo Vacuum Science and Technology. 13(No.2に掲載予定). (1995)

T.Asano、Y.Oobuchi 和 S.Katsumata：“Si 上离子研磨金刚石薄膜的场发射”真空科学与技术杂志 13（即将出版）（1995 年）。

K. Higa, T. Asano and T. Miyasato: "Variation of photoluminescence properties of stain-etched Si with crystallinity of starting polycrystalline Si films" Japnese Journal of Applied Physics. 33. Lf733-L173t (1994)

K. Higa、T. Asano 和 T. Miyasato：“染色蚀刻硅的光致发光特性随起始多晶硅薄膜结晶度的变化”《日本应用物理学杂志》。

Satoshi Katsumata, Yoshimichi Oobuch, and Tanemasa Asano: "Patterning of CVD diamond films by seeding and their field emission properties" Diamond and Related Materials. Vol.3. 1296-1300 (1994)

Satoshi Katsumata、Yoshimichi Oobuch 和 Tanemasa Asano：“通过晶种形成 CVD 金刚石薄膜图案及其场发射特性”《金刚石和相关材料》。