Investigation of Electron-Wave Interference Vacuum Microelectronics Devices

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This project has been aiming at realization of a new electron-wave interference devices by using vacuum microelectronics technology. During the term of project, following fundamentals have been revealed.(1) A new three terminal electron-wave interference device, which is composed of micron-size field electron emitter, deflection electrodes, and a collector electrode, has been proposed. Simulation base on quantum physics has been revealed that the device performing a very large logic swing can be prepared with 100nm-level fabrication technology which is available today, and that the device operates at voltages as low as the thermal voltage.(2) A new self-aligned process technology, which utilizes the control of the shadowing effect in the sputter deposition of films, has been developed for fabricating silicon micro-emitter. By using this process, it became possible to operates the micro-emitter at voltages as low as about ten volts.(3) It has been found that diamond synthesized on silicon is very promissing as a new material for the micro-field emitter. Effects of doping, thermal treatments, plasma treatments have been revealed. It has also been shown that ion milling is useful for fabrication of diamond field emitters.