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Fundamental Research of Single-Atomic Memories

单原子存储器的基础研究

基本信息

批准号：
03452083
负责人：
ASANO Tanemasa
金额：
$ 1.28万
依托单位：
Kyushu Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1991
资助国家：
日本
起止时间：
1991 至 1992
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-03452083/
关键词：
Tunneling Phenomenon Field Emission Ion Milling Anisotropic Etching Sputtering Vacuum Microelectronics

项目摘要

This research project aims fundamental research for developing a new type memory which enables to memorize a unit of digital information in an atomic size. In this fiscal year, development of a manufacturing process for Si tips which can be used for electron emission by the tunneling phenomenon and development of a micron-size field emitters. For characterization of Si tips, we have developed a unique "in-situ" measurement system by which we are able to reveal effects of annealing, environment, etc. The following summarize results of this fiscal year.(1) Ar ion sputtering is effective in sharpening of Si tips which have been prepared by anisotropic wet chemical etching using such chemicals as KOH. As a result, we can fabricate tip with tip radius of about 10nm.(2) The surface of Si tips fabricated by Ar ion sputtering is damaged. But it can be annealed out at 600ﾟC or above, and it results in a field emission of electrons superior to Si tips fabricated by other processes. The field emission characteristic is improved with increasing annealing temperature up to about 800ﾟC. This is because of surface cleaning. But annealing at 900ﾟC results in degradation of the field emission characteristic due to restructuring of the tip apex.(3) The field emission current from Si tips can be drastically improved by operating in bydrogen ambient. This is due to change in surface state density distribution.(4) Noise of emission current from a Si tip in vacuum shows the 1/f characteristic, while that of a tip in hydrogen depends on 1/f^n (n>1). This sggests that the noise originates from the combination of surface migration and adsorption/desorption of atoms.(5) A new self-aligned process for fabrication of micron size field emitter by usingsputter evaporation has been developed.

这个研究项目旨在进行基础研究，以开发一种新型存储器，使其能够在原子大小的范围内存储一个单位的数字信息。在本财政年度，开发了一种可用于隧道现象的电子发射的硅尖的制造工艺，并开发了微米尺寸的场发射器。为了表征Si尖端，我们开发了一种独特的“原位”测量系统，通过该系统，我们能够揭示退火，环境等的影响。以下是本财政年度的总结结果。(1)氩离子溅射对各向异性湿法化学刻蚀制备的硅尖有较好的锐化效果。因此，我们可以制造出尖端半径约为10nm的尖端。(2)氩离子溅射制备的Si针尖表面存在损伤。但它可以在600℃或更高的温度下退火，并且它的场发射电子优于其他工艺制备的Si尖端。随着退火温度的升高，其场发射特性得到改善，退火温度可达800℃左右。这是由于表面清洗。但在900℃的温度下退火，由于尖端的重构导致了场发射特性的下降。(3)在含氢环境下，硅尖端的场致发射电流显著提高。这是由于表面态密度分布的变化。(4)真空中硅尖的发射电流噪声表现为1/f特征，而氢尖的发射电流噪声表现为1/f^n （n>1）。这表明噪声来自于原子的表面迁移和吸附/解吸的结合。(5)提出了一种利用溅射蒸发制备微米级场发射极的自对准新工艺。