Study on Integratable Si Magnetic Sensor with Three Terminals.

可集成三端子硅磁传感器的研究。

• 批准号: 60550281
• 负责人: KIMURA Mitsuteru
• 金额: $ 1.02万
• 依托单位: Tohoku-Gakuin University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (C)
• 财政年份: 1985
• 资助国家: 日本
• 起止时间: 1985 至 1986
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-60550281/
• 关键词: Sensor; Magnetic field; 半導体デバイス

A high-sensitive Si magnetic sensor with three terminals composed of two <p^+> i <n^+> diodes ( <P_1> iN main diode and <P_2> iN auxiliary diode) with a common <n^+> -region N fabricated on a high-resisitivity Si substrate (i-substrate) is developed. This magnetic sensor is operated in double-injection states of both two <p^+> i <n^+> diodes and may be regarded as an active magnetoresistance device.We could find following results.1. Current-voltage curve ( <I_1> - <V_1> curve) can be divided into three regions of <I_1> <proportion> <V^2_1> <I_1> <proportion> <V^5_1> , and <I_1> <proportion> <V^3_1> in order of the magnitude of the bias-voltage <V_1> . The threshold voltage of the double injection agrees with the Lampert and Rose's theory.2. Sensitivity of the Sensor, <DELTA> R/ <R_0> at 1Kgauss is about 0.3 at L=100 <micro> m, and <DELTA> R/ <R_0> is about 2.0 at L=200 <micro> m , where <DELTA> R/ <R_0> is the ratio of resistance change of the main diode due to the magnetic field and L is the distance between <P_1> and N.3. The power consumption of the sensor is nearly equal to that of the auxiliary diode, and is less than 15mW.

开发了一种高灵敏度硅磁传感器，其三端子由两个 <p^+> i <n^+> 二极管（<P_1> iN 主二极管和 <P_2> iN 辅助二极管）组成，具有公共 <n^+> 区域 N，制作在高电阻率 Si 衬底（i-衬底）上。该磁传感器工作在两个<p^+> i <n^+>二极管的双注入状态下，可以被视为有源磁阻器件。我们可以发现以下结果： 1．电流-电压曲线（ <I_1> - <V_1> 曲线）可以按照偏置电压 <V_1> 的大小顺序分为 <I_1> <proportion> <V^2_1> <I_1> <proportion> <V^5_1> 和 <I_1> <proportion> <V^3_1> 三个区域。双注入的阈值电压与Lampert和Rose的理论一致。 2．传感器的灵敏度，<DELTA> R/ <R_0> 在 1Kgauss 时，L=100 <micro> m 时约为 0.3，<DELTA> R/ <R_0> 在 L=200 <micro> m 时约为 2.0，其中 <DELTA> R/ <R_0> 是主二极管因磁场而产生的电阻变化之比，L 是 <P_1> 和 <P_1> 之间的距离。 N.3。传感器的功耗几乎与辅助二极管的功耗相同，并且小于15mW。

项目成果

Satoshi,Takahashi: "Silicon pin Magneto diode with an Auxiliary Electrode" Science and Engineering Report of Tohoku Gakuin University. 20. 23-26 (1985)

Satoshi,Takahashi：“带辅助电极的硅针磁二极管”东北学院大学科学与工程报告。

Mitsuteru Kimura: Proc.of the 6th Sensor Symposium,1986. 41-45 (1987)

Mitsuteru Kimura：第 6 届传感器研讨会论文集，1986 年。

Mitsuteru, Kimura: "Pin Type Si Magnetic Sensor with Three Terminals" Proc. of the 6th Sensor Symposium,1986.41-45 (1987)

Mitsuteru, Kimura：“具有三个端子的引脚型硅磁传感器”Proc。

高橋智: 東北学院大学工学部研究報告. 20. 20-26 (1985)

高桥聪：东北学院大学工学部研究报告。20. 20-26 (1985)

Mitsuteru Kimura: Electronics Letters. 22. 830-832 (1986)

木村光辉：《电子通讯》。