Fabrication of Vertical Field-Effect Transistor with a Superlattice Source by Using Focused Ion Beam

利用聚焦离子束制造超晶格源垂直场效应晶体管

基本信息

项目摘要

The Purpose of this study is to fabricate the field-effect transistor with a superlattice source ; i. E. A new functional devices, by means of the focused ion beam (FIB) implantations. We also fabricated the quantum wire field -effect transistor and studied the low-temperature characteristics of the operation.We succeeded in fabricating the GaAs quantum wires by the FIB implantation using the two methods ; one is the high-resistivity method and the other is the pn-junction method. For the FIB lithography, we studied the optimum conditions of the FIB implantation such as ion species, implantation doses, and implantation energies. The FIB lithography with a minimum resolution of 0.2mum was achieved. The surface morphology of the PMMA resist after the FIB lithography was traced by means of the scanning tunneling microscopy. Although the boundaries look like rough, we observed the periodicity resulting from the spacing of the dots of the ion beam.We studied the mechanism of saturation of the phase breaking time at low-temperature to analyze the characteristics of the operation of the electron wave interference devices. The quantum wire with an Al gate was fabricated by the direct FIB implantation through the Al gate. The dependence of the phase coherence length on the temperature and electric field was studied. We analyzed the operation limit of the quantum interference devices, such as the temperature and input voltage. Furthermore, we improved the system of molecular beam epitaxy to obtain high-mobility layers. We studied the fabrication processes and design principles of the vertical field-effect transistor with a superlattice source.
本研究的目的是利用超晶格源制备场效应晶体管;i. E.利用聚焦离子束(FIB)植入的新型功能器件。我们还制作了量子线场效应晶体管,并对其低温运行特性进行了研究。采用FIB植入两种方法成功制备了GaAs量子线;一种是高电阻法,另一种是pn结法。对于FIB光刻,我们研究了FIB注入的最佳条件,如离子种类、注入剂量和注入能量。实现了最小分辨率为0.2 μ m的FIB光刻。利用扫描隧道显微镜对FIB光刻后的PMMA抗蚀剂表面形貌进行了跟踪。虽然边界看起来粗糙,但我们观察到离子束点间距造成的周期性。研究了低温破相时间饱和的机理,分析了电子波干扰器件的工作特性。通过铝门直接注入FIB,制备了带铝门的量子线。研究了相位相干长度与温度和电场的关系。我们分析了量子干涉器件的工作极限,如温度和输入电压。此外,我们改进了分子束外延系统,以获得高迁移率的层。研究了具有超晶格源的垂直场效应晶体管的制备工艺和设计原理。

项目成果

期刊论文数量(34)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
Hirakawa,K.: "Orientation independence of heterojunction band offsets at GaAsーAlAs heterointerfaces characterized by xーray photoemission spectrosicpy" Appl.Phys.Lett.57. 2555-2557 (1990)
Hirakawa, K.:“通过 X 射线光发射光谱表征的 GaAsーAlAs 异质界面异质结能带偏移的方向独立性”Appl.Phys.Lett.57 (1990)。
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Hirakawa,K.,: "Dephasing mechanism of elctron waves in AlGaAs/GaAs quantum wires" Extended Abst.7th Int'l Workshop on Future Electron Devices. 123-127 (1989)
Hirakawa,K.,:“AlGaAs/GaAs 量子线中电子波的相移机制”扩展 Abst.7th 国际未来电子器件研讨会。
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T. Ikoma, T. Odagiri, and K. Hirakawa: "Coherency of Electron Waves in Mesoscopic Electronics" Extended Abstract of the 22nd (1990 International) Conf. on Solid State Devices and Materials, Sendai. 717 (1990)
T. Ikoma、T. Odagiri 和 K. Hirakawa:“介观电子学中电子波的相干性”第 22 届(1990 年国际)会议的扩展摘要。
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Y. Hashimoto, K. Hirakawa, and T. Ikoma: "Microscopic Charge Distributions at GaAs/AlAs Heterointerfaces Characterized by X-ray Photoelectron Spectroscopy" Proc. of 17th Int'l Symp. on Gallium Arsenide and Related Compounds, 1990.
Y. Hashimoto、K. Hirakawa 和 T. Ikoma:“通过 X 射线光电子能谱表征 GaAs/AlAs 异质界面的微观电荷分布”Proc。
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Ikoma,T.: "Coherency of Electron Waves in Mesoscopic Electronics" Extended Abstract of 22nd Int.Conf.on Solid State Devices and Materials,Sendai. PartII. 717-720 (1990)
Ikoma,T.:“介观电子学中电子波的相干性”第 22 届固态器件和材料国际会议的扩展摘要,仙台。
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IKOMA Toshiaki其他文献

IKOMA Toshiaki的其他文献

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{{ truncateString('IKOMA Toshiaki', 18)}}的其他基金

Artificial Control of Semiconductor Heterojunction Band Discontinuity
半导体异质结能带不连续性的人工控制
  • 批准号:
    03402022
  • 财政年份:
    1991
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)
Interference Effect of Electron Waves in Quantum Wires Fabricated by Focused Ion Beam Implantation
聚焦离子束注入量子线中电子波的干涉效应
  • 批准号:
    01460072
  • 财政年份:
    1989
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
A Study on Ultrafine Doping by Focused Ion Beam Implantation
聚焦离子束注入超细掺杂研究
  • 批准号:
    60850058
  • 财政年份:
    1985
  • 资助金额:
    $ 8.45万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research

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