Artificial Control of Semiconductor Heterojunction Band Discontinuity

半导体异质结能带不连续性的人工控制

• 批准号: 03402022
• 负责人: IKOMA Toshiaki
• 金额: $ 14.08万
• 依托单位: University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1991
• 资助国家: 日本
• 起止时间: 1991 至 1993
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-03402022/
• 关键词: heterojunction; band offsets; interface dipole; x-ray photoemission spectroscopy; tight-binding calculations; band bending; delta-doping; バンド構造の制御; 光電子分光法; 強結合法; 半導体ヘテロ構造; 界面ダイポ-ル

Roles of Si layr at GaAs/AlAs structures have been studied by x-ray photoemission spectroscopy(XPS) and self-consistent tight-binding calculations. It is found that one has to precisely control the Si-occupying sites to from an artificial interface dipole to control heterojunction band offsets. However, under the present experimental condition, inserted Siatoms distribute over a few atomic layrs and mainly act as donor impurities, which introduce only a band bending.Alternatively, we proposed to combine two closely spaced delta-doping layrs to vary the band offsets. Hall measurements show that a growth temperature varies a conduction type of(311)A-oriented GaAs delta-doped with only Si as a dopant. The effective band offset is varied by -0.5eV at a GaAs/AlAs heterostructure with p-and n-type Si doping sheets with a narrow spacing of -5 nm. This experiment shows that by controlling atomic sites of inserted Si, we can introduce an artificial interface dipole to realize a control of heterojunction band offsets.

利用x射线光发射光谱（XPS）和自洽紧密结合计算研究了Si层在GaAs/AlAs结构中的作用。研究发现，为了控制异质结带偏移，必须精确地控制硅占位点，从而利用人工界面偶极子控制异质结带偏移。然而，在目前的实验条件下，插入的Siatoms分布在几个原子层上，主要作为给体杂质，只引入能带弯曲。或者，我们建议结合两个紧密间隔的δ掺杂层来改变带偏移。霍尔测量表明，仅掺杂Si作为掺杂剂的（311）a取向GaAs δ的生长温度随传导类型而变化。在p型和n型Si掺杂片的GaAs/AlAs异质结构中，有效带偏移量变化了-0.5eV，间距为-5 nm。实验表明，通过控制插入Si的原子位置，可以引入人工界面偶极子来实现对异质结带偏移的控制。

项目成果

Y.Hashimoto: "Roles of Si-Insertion Layer at GaAs/AlAs Heterointerface determined by X-ray Photoemission Spectroscopy" J.Vac.Sci.Tech. (to be published). (1994)

Y.Hashimoto：“通过 X 射线光电发射光谱确定 GaAs/AlAs 异质界面上硅插入层的作用”J.Vac.Sci.Tech。

生駒 俊明: "半導体ヘテロ界面におけるバンド不連続の人為的制御" 生産研究. 45. 21-24 (1993)

Toshiaki Ikoma：“半导体异质界面能带不连续性的人工控制”Production Research 45. 21-24 (1993)。

T.Saito: "Band Discontinuity and Effects of Si-Insertion Layer at(311)A GaAs/AlAs Interface" Solid-State Electronics. (to be Published). (1994)

T.Saito：“(311)A GaAs/AlAs 界面处的硅插入层的能带不连续性和影响”固态电子学。

Y.Hashimoto: "Roles of Si insertion Layer at GaAs/AlAs heterointerface determined by X-ray photoemission Spectroscopy" J.Vac.Sci.Tech.(to be published). (1994)

Y.Hashimoto：“通过 X 射线光发射光谱确定 GaAs/AlAs 异质界面中 Si 插入层的角色”J.Vac.Sci.Tech.（待出版）。

K.Agawa: "Electrical Properties of Heavily Si-doped GaAs grown on(311)A GaAs Surfaces by Molecular Beam Epitaxy" Proceedings of 20th Int'l Symp,GaAs and Related Compounds. (to be published). (1994)

K.Akawa：“通过分子束外延在 (311)A GaAs 表面生长的重硅掺杂 GaAs 的电性能”第 20 届国际研讨会论文集，GaAs 和相关化合物。