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Interference Effect of Electron Waves in Quantum Wires Fabricated by Focused Ion Beam Implantation

聚焦离子束注入量子线中电子波的干涉效应

基本信息

批准号：
01460072
负责人：
IKOMA Toshiaki
金额：
$ 3.26万
依托单位：
Institute of Industrial Science, University of Tokyo.
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (B)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-01460072/
关键词：
Focused Ion Beam Quantum Wire Interference of Electron Waves AlGaAs Gallium Arsenide Electron Scattering Al Ga As 弱局在効果低相緩和機構電子-電子散乱

项目摘要

The purposes of this work are : (i) to develop fabrication processes of the device structures based on quantum wires by means of focused ion beam(FIB) implantation, and (ii)to understand the electron transport mechanisms in the quantum wire structures fabricated by the FIB implantation. In this year, we have studied the electron scattering at the boundaries of the quantum wires. We systematically studied the specularity factor p, which is the probability of specular scattering at the boundary, for various carrier densities N_s and wire widths W.We defined quantum wires by locally destroying the conductivity of a two dimensional electron gas by FIB implantation. Two types of wire structures were fabricated ; one is a 1mum-wide Schottky-gated wire, and the other an in-plane-gated wire. From measured positive magnetoresistance, p and W were derived based on the classical theory for the boundary scattering When N_s was varied from 2X10^<15>m^<-2>to 3.7X10^<15>m^<-2> in a Schottky-gated wire, p was found to be nearly 0.6 and almost independent of N_s. This fact suggests that the scatterer near the boundary has a shortーranged delta-function like potential. On the other hand, when W was varied from 0.6mum to 0.4mum in an in-plane-gated wire, p was found to depend strongly on W and increase from 0.45 to 0.8. When p is plotted as a function of DELTAd, the distance between the ion implanted position and the boundary of the conducting channel, all data fall on a single curve, which strongly suggests that the scatterers are generated by ion implantation and that the DELTAd dependence of p reflects the spatial distribution of the scatterers. We consider that the most important diffusive scatterers which exist near the boundary are point defects caused by struggling ions.

本工作的目的是：（i）开发基于量子线的器件结构的制造工艺，通过聚焦离子束（FIB）注入，和（ii）理解通过FIB注入制造的量子线结构中的电子输运机制。在这一年中，我们研究了电子在量子线边界的散射。本文系统地研究了不同载流子密度N_s和线宽W时，量子线边界处镜面散射的概率--镜面因子p。制作了两种类型的线结构;一种是1 μ m宽的肖特基栅线，另一种是面内栅线。由实测的正磁电阻，根据边界散射的经典理论，导出了p和W。在肖特基栅线中，当N_s从2 × 10 ~（10）<15><-2>~ 3.7 × 10 ~（10）μ <15>m ~ 2变化<-2>时，p接近0.6，几乎与N_s无关。这一事实表明，在边界附近的散射体有一个短的δ函数的潜力。另一方面，当W从0.6 μ m到0.4 μ m在平面栅线变化时，发现p强烈依赖于W，并从0.45增加到0.8。当p作为Δ d（离子注入位置和导电沟道边界之间的距离）的函数绘制时，所有数据都落在单个曲线上，这强烈表明散射体是由离子注入产生的，并且p的Δ d依赖性反映了散射体的空间分布。我们认为，存在于边界附近的最重要的扩散散射体是由挣扎离子引起的点缺陷。