A Study on Ultrafine Doping by Focused Ion Beam Implantation

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1. Development of Focused Ion Beam (FIB) ApparatusLiquid Metal Ion Source for various ions were developed in high vacuum chamber to prolong the lifetimes. It was confirmed that desired ion species could be selected by ExB mass-filter, focused into 0.1 um diameter and deflected precisely by computer control.2. Transient AnnealA transient anneal technique was developed to activate implanted Si ion in GaAs. Hall and photoluminescence measurements revealed that SiAs and GaAs acceptors, which were created during anneal, affected the activation efficiency.3. Characterization of FIB implanted regionsFocused Si and Be ions were implanted into GaAs and maximum efficiency of 40% and 90% were obtained, respectively. These values are compatible to those for conventional implantations. However, Be atoms were found to anomalously diffuse after longer annealing than 60 sec.4. Fabrication of new functional devices by FIB implantation into small regionsLateral- and vertical-JFETs, which can be fabricated by FIB implantation, were proposed. These devices were designed by calculating distributions of implanted ions in GaAs.5. Fabrication of new materials by high-dose implantation into small regionsFocused Ga ions were implanted into InP to form GaInP alloy semiconductors. It was revealed by optical measurements that the alloyed GaInP was partly formed. However, poly-crystallization of implanted layers and Ga-clustering were observed.