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A Study on Ultrafine Doping by Focused Ion Beam Implantation

聚焦离子束注入超细掺杂研究

基本信息

批准号：
60850058
负责人：
IKOMA Toshiaki
金额：
$ 8万
依托单位：
The University of Tokyo
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1985
资助国家：
日本
起止时间：
1985 至 1986
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-60850058/
关键词：
Focused Ion Beam Ion Source Transient Anneal Submicron Device New Functional Device Gallium Arsenide Alloy Semiconductor 集束イオンビーム超微細ドーピングイオン源混晶フォトルミネッセンス法

项目摘要

1. Development of Focused Ion Beam (FIB) ApparatusLiquid Metal Ion Source for various ions were developed in high vacuum chamber to prolong the lifetimes. It was confirmed that desired ion species could be selected by ExB mass-filter, focused into 0.1 um diameter and deflected precisely by computer control.2. Transient AnnealA transient anneal technique was developed to activate implanted Si ion in GaAs. Hall and photoluminescence measurements revealed that SiAs and GaAs acceptors, which were created during anneal, affected the activation efficiency.3. Characterization of FIB implanted regionsFocused Si and Be ions were implanted into GaAs and maximum efficiency of 40% and 90% were obtained, respectively. These values are compatible to those for conventional implantations. However, Be atoms were found to anomalously diffuse after longer annealing than 60 sec.4. Fabrication of new functional devices by FIB implantation into small regionsLateral- and vertical-JFETs, which can be fabricated by FIB implantation, were proposed. These devices were designed by calculating distributions of implanted ions in GaAs.5. Fabrication of new materials by high-dose implantation into small regionsFocused Ga ions were implanted into InP to form GaInP alloy semiconductors. It was revealed by optical measurements that the alloyed GaInP was partly formed. However, poly-crystallization of implanted layers and Ga-clustering were observed.

1.聚焦离子束(FIB)装置的研制为了延长FIB装置的寿命，在高真空室中研制了各种离子的液态金属离子源。结果表明，用ExB质量滤光器可以选择所需的离子物种，聚焦到0.1um直径，并通过计算机控制精确偏转。瞬变退火法发展了一种瞬变退火法来激活注入到GaAs中的Si离子。霍尔和光致发光测量表明，在退火过程中产生的SiAs和GaAs受体影响了激活效率。聚焦硅和铍离子注入到砷化镓中，分别获得了40%和90%的最高效率。这些值与传统种植体的值是兼容的。然而，退火时间超过60s后，Be原子发生了反常扩散。提出了用FIB注入小区域制作新型功能器件--横向和垂直JFET，它可以用FIB注入制作。这些器件是通过计算注入离子在GaAs中的分布来设计的。小区域高剂量注入制备新材料聚焦镓离子注入InP形成GaInP合金半导体。光学测量表明，部分形成了合金化的GaInP。然而，观察到注入层的多晶化和Ga的聚集。